ABSTRACTFe-Si, Co-Ta and Co-Zr amorphous films have been deposited by using various sputtering methods (conventional rf diode sputtering, rf triode sputtering, dc Targets Facing type sputtering (dc TF sputtering) and dual ion beam sputtering (DIB sputtering)). The lower limit of the Si and Ta content to form amorphous Fe-Si and Co-Ta films changes significantly with the sputtering method. These differences between the sputtering methods are mainly caused by the differences in the plasma potential which affects the amount of ion bombardment to the film surface during sputtering,and the minimum content of Si or Ta to obtain amorphous films decreases as the plasma potential increases. These results indicate that the ion bombardment suppresses the growth of crystallites and promotes the formation of the films with amorphous structures. This is confirmed by the deposition of Co-Ta and Co-Zr amorphous films under the condition of various amount of ion bombardment by using a DIB sputtering system.