Aluminum alloy ultrahigh vacuum chamber for molecular beam epitaxy

Maki Suemitsu; Tetsuya Kaneko; Nobuo Miyamoto

doi:10.1116/1.574134

Aluminum alloy ultrahigh vacuum chamber for molecular beam epitaxy

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.574134 ◽

1987 ◽

Vol 5 (1) ◽

pp. 37-43 ◽

Cited By ~ 25

Author(s):

Maki Suemitsu ◽

Tetsuya Kaneko ◽

Nobuo Miyamoto

Keyword(s):

Aluminum Alloy ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Vacuum Chamber ◽

Ultrahigh Vacuum

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Aluminum alloy ultrahigh vacuum system for molecular beam epitaxy

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.573720 ◽

1986 ◽

Vol 4 (6) ◽

pp. 2515-2519 ◽

Cited By ~ 11

Author(s):

M. Miyamoto ◽

Y. Sumi ◽

S. Komaki ◽

K. Narushima ◽

H. Ishimaru

Keyword(s):

Aluminum Alloy ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Ultrahigh Vacuum ◽

Vacuum System

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Performance of an ultrahigh‐vacuum sample transfer system for investigation of molecular‐beam epitaxy grown semiconductor surfaces

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.578656 ◽

1993 ◽

Vol 11 (5) ◽

pp. 2860-2862 ◽

Cited By ~ 13

Author(s):

X.‐S. Wang ◽

C. Huang ◽

V. Bressler‐Hill ◽

R. Maboudian ◽

W. H. Weinberg

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Ultrahigh Vacuum ◽

Semiconductor Surfaces ◽

Transfer System ◽

Sample Transfer

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Advanced electron beam source for ultrahigh vacuum (molecular beam epitaxy) and high vacuum applications of thin film deposition

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.579026 ◽

1994 ◽

Vol 12 (4) ◽

pp. 1628-1630 ◽

Cited By ~ 1

Author(s):

J. W. Moore ◽

N. K. Tsujimoto

Keyword(s):

Thin Film ◽

Electron Beam ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

High Vacuum ◽

Ultrahigh Vacuum ◽

Thin Film Deposition ◽

Film Deposition ◽

Beam Source

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Summary Abstract: III–V molecular beam epitaxy: Toward a concept of all ultrahigh vacuum processing

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.573448 ◽

1986 ◽

Vol 4 (3) ◽

pp. 1033-1034 ◽

Cited By ~ 4

Author(s):

James P. Harbison

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Ultrahigh Vacuum ◽

Vacuum Processing

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A large aluminum alloy molecular beam epitaxy chamber with an ultimate pressure of 7.5×10−12 Torr

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.572890 ◽

1985 ◽

Vol 3 (6) ◽

pp. 2200-2204 ◽

Cited By ~ 7

Author(s):

J. R. Chen ◽

K. Narushima ◽

M. Miyamoto ◽

H. Ishimaru

Keyword(s):

Aluminum Alloy ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Ultimate Pressure ◽

Molecular Beam Epitaxy Chamber

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A low-energy, ultrahigh vacuum, solid-metal ion source for accelerated-ion doping during molecular beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.582814 ◽

1984 ◽

Vol 2 (3) ◽

pp. 306 ◽

Cited By ~ 33

Author(s):

A. Rockett

Keyword(s):

Molecular Beam Epitaxy ◽

Metal Ion ◽

Molecular Beam ◽

Ultrahigh Vacuum ◽

Ion Source ◽

Solid Metal ◽

Low Energy ◽

Ion Doping

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Ultrahigh vacuum atomic force microscope study of 10–30 nm scale GaAs ridge structure formation by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.118303 ◽

1997 ◽

Vol 70 (7) ◽

pp. 883-885 ◽

Cited By ~ 6

Author(s):

S. Koshiba ◽

Ichiro Tanaka ◽

Y. Nakamura ◽

H. Noge ◽

H. Sakaki

Keyword(s):

Molecular Beam Epitaxy ◽

Atomic Force Microscope ◽

Structure Formation ◽

Microscope Study ◽

Molecular Beam ◽

Ultrahigh Vacuum ◽

Ridge Structure ◽

Atomic Force

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Ultrahigh vacuum arcjet nitrogen source for selected energy epitaxy of group III nitrides by molecular beam epitaxy

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.581129 ◽

1998 ◽

Vol 16 (3) ◽

pp. 1615-1620 ◽

Cited By ~ 15

Author(s):

F. J. Grunthaner ◽

R. Bicknell-Tassius ◽

P. Deelman ◽

P. J. Grunthaner ◽

C. Bryson ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Nitrogen Source ◽

Molecular Beam ◽

Ultrahigh Vacuum ◽

Group Iii Nitrides ◽

Group Iii

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Apparatus for producing ultraclean bicrystals by the molecular beam epitaxy growth and ultrahigh vacuum bonding of thin films

Review of Scientific Instruments ◽

10.1063/1.1144344 ◽

1993 ◽

Vol 64 (10) ◽

pp. 2983-2992 ◽

Cited By ~ 10

Author(s):

A. Amiri‐Hezaveh ◽

R. W. Balluffi

Keyword(s):

Thin Films ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Ultrahigh Vacuum ◽

Molecular Beam Epitaxy Growth

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Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility

Nanoscale Research Letters ◽

10.1186/1556-276x-6-522 ◽

2011 ◽

Vol 6 (1) ◽

Cited By ~ 16

Author(s):

Vladimir A Yuryev ◽

Larisa V Arapkina

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Dot ◽

Molecular Beam ◽

Ultrahigh Vacuum ◽

Surface Nucleation ◽

Cmos Compatibility ◽

Ge Quantum Dot

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