Ultrahigh vacuum atomic force microscope study of 10–30 nm scale GaAs ridge structure formation by molecular beam epitaxy

1997 ◽  
Vol 70 (7) ◽  
pp. 883-885 ◽  
Author(s):  
S. Koshiba ◽  
Ichiro Tanaka ◽  
Y. Nakamura ◽  
H. Noge ◽  
H. Sakaki
Keyword(s):  
Molecular Beam Epitaxy ◽  
Atomic Force Microscope ◽  
Structure Formation ◽  
Microscope Study ◽  
Molecular Beam ◽  
Ultrahigh Vacuum ◽  
Ridge Structure ◽  
Atomic Force

Films Grown on Vicinal GaAs(111) Substrates By Molecular Beam Epitaxy

1992 ◽  
Vol 263 ◽  
Author(s):  
K. Yang ◽  
L. J. Schowalter
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Atomic Force Microscope ◽  
Surface Reconstruction ◽  
Molecular Beam ◽  
Vicinal Surfaces ◽  
Atomic Force ◽  
Morphology Of Films ◽  
Surface Morphologies

ABSTRACTThe faceted surface morphology of films grown on on-axis GaAs(111) substrates in the reconstruction regime is studied with an atomic force microscope. It reveals that facets are vicinal surfaces. Surface morphologies of films grown on substrates tilted toward different directions have been compared. An explanation is given for all observed surface morphologies. Smooth films can only be obtained on substrates tilted toward [211] in the surface reconstruction regime.

Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 215
Author(s):  
Rajeev R. Kosireddy ◽  
Stephen T. Schaefer ◽  
Marko S. Milosavljevic ◽  
Shane R. Johnson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality ◽  
X Ray Diffraction ◽  
Interface Quality ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Lateral Variations

Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are investigated using X-ray diffraction, Nomarski optical microscopy, atomic force microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The InAsSbBi layers are 210 nm thick, coherently strained, and show no observable defects. The substrate offcut is not observed to influence the structural and interface quality of the samples. Each sample exhibits small lateral variations in the Bi mole fraction, with the largest variation observed in the on-axis growth. Bismuth rich surface droplet features are observed on all samples. The surface droplets are isotropic on the on-axis sample and elongated along the [011¯] step edges on the 1° and 4° offcut samples. No significant change in optical quality with offcut angle is observed.

Modulation of the crystal structure in quasi-one-dimensional solids induced by impurities: An atomic-force microscope study

1993 ◽  
Vol 71 (20) ◽  
pp. 3303-3306 ◽  
Author(s):  
Y. Gong ◽  
Q. Xue ◽  
Z. Dai ◽  
C. G. Slough ◽  
R. V. Coleman ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Atomic Force Microscope ◽  
Microscope Study ◽  
One Dimensional ◽  
Atomic Force
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