Influence of unintentionally incorporated Ar atoms on the crystalline polarity of magnetron-sputtered Al-doped ZnO polycrystalline films on glass and sapphire substrates

2020 ◽  
Vol 38 (2) ◽  
pp. 022202 ◽  
Author(s):  
Junichi Nomoto ◽  
Tomohiko Nakajima ◽  
Iwao Yamaguchi ◽  
Tetsuo Tsuchiya
Keyword(s):  
Polycrystalline Films ◽  
Sapphire Substrates ◽  
Doped Zno

Highly (0001)-oriented Al-doped ZnO polycrystalline films on amorphous glass substrates

2016 ◽  
Vol 120 (12) ◽  
pp. 125302 ◽  
Author(s):  
Junichi Nomoto ◽  
Katsuhiko Inaba ◽  
Minoru Osada ◽  
Shintaro Kobayashi ◽  
Hisao Makino ◽  
...  
Keyword(s):  
Polycrystalline Films ◽  
Glass Substrates ◽  
Amorphous Glass ◽  
Doped Zno

Change in polarity of zinc oxide films grown on sapphire substrates without insertion of any buffer layer

2008 ◽  
Vol 23 (12) ◽  
pp. 3269-3272 ◽  
Author(s):  
Yutaka Adachi ◽  
Naoki Ohashi ◽  
Tsuyoshi Ohnishi ◽  
Takeshi Ohgaki ◽  
Isao Sakaguchi ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Zno Films ◽  
Ion Scattering ◽  
Ceramic Target ◽  
Interfacial Phase ◽  
Sapphire Substrates ◽  
Zinc Oxide Films ◽  
Ion Scattering Spectroscopy ◽  
Doped Zno ◽  
Polarity Change

We have investigated the polarity of zinc oxide (ZnO) and Al-doped ZnO films grown on (11¯20) and (0001) sapphire substrates, using coaxial impact collision ion scattering spectroscopy. The films grown by pulsed laser deposition with a nominally undoped ZnO ceramic target had a (000¯1) surface, whereas the films prepared with a 1 mol% Al-doped ZnO ceramic target had a (0001) surface. The usage of Al-doped and undoped targets caused no difference in the in-plane lattice orientation. Electron microscope observations revealed that polarity change due to doping occurred without the formation of any interfacial phase between ZnO and sapphire.

Photoluminescence and Raman spectra in Ga-doped ZnO layers on sapphire

2007 ◽  
Vol 1035 ◽  
Author(s):  
Michael A. Reshchikov ◽  
S. Nagata ◽  
J. Xie ◽  
B. Hertog ◽  
A. Osinsky
Keyword(s):  
Raman Spectra ◽  
Room Temperature ◽  
Molecular Beam ◽  
Exciton Peak ◽  
Deep Acceptor ◽  
Sapphire Substrates ◽  
Related Defect ◽  
Doped Zno ◽  
Ga Doping ◽  
Zn Vacancy

AbstractGa-doped ZnO layers were grown on sapphire substrates by molecular beam epitaxy (MBE). Low-temperature photoluminescence (PL) and room-temperature Raman spectra were investigated. Defect-related modes at 277 and 510 cm−1 appeared in the Raman spectrum for Ga-doped layers. The PL spectrum is dominated by a donor-bound exciton peak at 3.356 eV. A weak yellow luminescence (YL) band peaking at 2.1-2.2 eV was studied in detail. It shifted to higher photon energies (up to 0.1 eV) with increasing excitation intensity. The YL band is attributed to transitions from shallow donors to a deep acceptor. The acceptor is thought to be a Zn vacancy-related defect because the intensity of the YL band decreased dramatically with Ga doping.

Dual-donor (Zni and VO) mediated ferromagnetism in copper-doped ZnO micron-scale polycrystalline films: a thermally driven defect modulation process

Nanoscale ◽  
2013 ◽  
Vol 5 (9) ◽  
pp. 3918 ◽  
Author(s):  
Liang Hu ◽  
Jun Huang ◽  
Haiping He ◽  
Liping Zhu ◽  
Shijiang Liu ◽  
...  
Keyword(s):  
Polycrystalline Films ◽  
Thermally Driven ◽  
Doped Zno

Epitaxial growth of NH3-doped ZnO thin films on 〈〉 oriented sapphire substrates

2003 ◽  
Vol 255 (3-4) ◽  
pp. 293-297 ◽  
Author(s):  
Jinzhong Wang ◽  
Guotong Du ◽  
Baijun Zhao ◽  
Xiaotian Yang ◽  
Yuantao Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Zno Thin Films ◽  
Sapphire Substrates ◽  
Doped Zno

Growth and characterization of Ga-doped ZnO layers on a-plane sapphire substrates grown by molecular beam epitaxy

2002 ◽  
Vol 237-239 ◽  
pp. 538-543 ◽  
Author(s):  
Hiroyuki Kato ◽  
Michihiro Sano ◽  
Kazuhiro Miyamoto ◽  
Takafumi Yao
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Sapphire Substrates ◽  
Doped Zno
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