Effects of grain boundary scattering on carrier transport of highly transparent conductive Ga-doped ZnO polycrystalline films

2013 ◽  
Vol 10 (4) ◽  
pp. 603-606 ◽  
Author(s):  
Tetsuya Yamamoto ◽  
Huaping Song ◽  
Hisao Makino
Keyword(s):  
Grain Boundary ◽  
Carrier Transport ◽  
Boundary Scattering ◽  
Polycrystalline Films ◽  
Grain Boundary Scattering ◽  
Doped Zno

Grain boundary scattering in aluminium-doped ZnO films

1991 ◽  
Vol 205 (1) ◽  
pp. 64-68 ◽  
Author(s):  
S. Ghosh ◽  
A. Sarkar ◽  
S. Chaudhuri ◽  
A.K. Pal
Keyword(s):  
Grain Boundary ◽  
Zno Films ◽  
Boundary Scattering ◽  
Grain Boundary Scattering ◽  
Doped Zno

scholarly journals Impacts of the thickness on the electron mobility of gallium and hydrogen co– doped zinc oxide thin films

2019 ◽  
Vol 2 (2) ◽  
pp. 82-87
Author(s):  
Anh Thanh Tuan Pham ◽  
Dung Van Hoang ◽  
Truong Huu Nguyen ◽  
Thang Bach Phan ◽  
Vinh Cao Tran
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Electron Mobility ◽  
High Mobility ◽  
Boundary Scattering ◽  
Grain Boundary Scattering ◽  
Average Transmittance ◽  
Wide Wavelength Range ◽  
Doped Zno ◽  
Co Doped

this work, impacts of the thickness on electron mobility of Ga and H2 co-doped ZnO (HGZO) thin films were investigated. The HGZO films were prepared on glass substrate by using magnetron sputtering from ceramic Ga-doped ZnO (GZO) target in the gas mixture of argon and hydrogen. Based on the Hall measurement, the mobility enhanced fastly from 44.6 to 53.4cm2/Vs with the increasing thickness from 350 to 900 nm, then tends to be saturated at ~55cm2/Vs with further thickness. Most of the films achieve the mobility of >50cm2/Vs, which is very high value for sputtered TCOs thin films. The thicknessdependent mobility is explained in term of grain boundary scattering. The improvement of crystalline quality reduced grain boundary scattering, which lead to the fast increase in mobility of the films with 350–900nm in thickness. When the thickness increased more than 900nm, however, the appearance of many defects increased scattering centers and saturates the mobility. Furthermore, the results showed the HGZO films with optimum thickness of 800nm obtained low resistivity (5.3 10-4􀁛cm), high average transmittance (83.3%) in the wide wavelength range of 400–1100nm, and the highest figure of merit (10.3 103􀁛-1cm-1) corresponding to high mobility (51.1cm2/Vs).

Grain boundary scattering in Ru and Cu interconnects

2020 ◽  
Author(s):  
Troels Markussen ◽  
Shela Aboud ◽  
Anders Blom ◽  
Nicholas A. Lanzillo ◽  
Tue Gunst ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Boundary Scattering ◽  
Cu Interconnects ◽  
Grain Boundary Scattering

Coherent Phonon-Grain Boundary Scattering in Silicon Inverse Opals

Nano Letters ◽  
2013 ◽  
Vol 13 (2) ◽  
pp. 618-624 ◽  
Author(s):  
Jun Ma ◽  
Bibek R. Parajuli ◽  
Marc G. Ghossoub ◽  
Agustin Mihi ◽  
Jyothi Sadhu ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Boundary Scattering ◽  
Coherent Phonon ◽  
Inverse Opals ◽  
Grain Boundary Scattering

Effect of grain boundary scattering on the TCR of thin tin films

1983 ◽  
Vol 2 (7) ◽  
pp. 360-362 ◽  
Author(s):  
C. R. Pichard ◽  
Yu. F. Komnik ◽  
B. I. Belevtsev ◽  
A. J. Tosser
Keyword(s):  
Grain Boundary ◽  
Boundary Scattering ◽  
Tin Films ◽  
Grain Boundary Scattering

Enhancing the average thermoelectric figure of merit of elemental Te by suppressing grain boundary scattering

2020 ◽  
Vol 8 (17) ◽  
pp. 8455-8461 ◽  
Author(s):  
Yehao Wu ◽  
Feng Liu ◽  
Qi Zhang ◽  
Tiejun Zhu ◽  
Kaiyang Xia ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Grain Boundary ◽  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Thermoelectric Figure Of Merit ◽  
Boundary Scattering ◽  
Thermoelectric Figure ◽  
Grain Boundary Scattering

Suppressed grain boundary scattering contributes to enhanced electrical conductivity and device zT in elemental Te based thermoelectric materials.

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