scholarly journals Next generation of extreme-resolution electron beam lithography

2019 ◽  
Vol 37 (6) ◽  
pp. 061605 ◽  
Author(s):  
John N. Randall ◽  
James H. G. Owen ◽  
Joseph Lake ◽  
Ehud Fuchs
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Next Generation ◽  
Resolution Electron

High resolution electron beam lithography on CaF2

1984 ◽  
Vol 44 (4) ◽  
pp. 468-469 ◽  
Author(s):  
P. M. Mankiewich ◽  
H. G. Craighead ◽  
T. R. Harrison ◽  
A. H. Dayem
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Electron Beam Lithography ◽  
Resolution Electron

High Resolution Resists for Next Generation Lithography: The Nanocomposite Approach

2000 ◽  
Vol 636 ◽  
Author(s):  
Kenneth E. Gonsalves ◽  
Hengpeng Wu ◽  
Yongqi Hu ◽  
Lhadi Merhari
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Electron Beam Lithography ◽  
Ion Beam ◽  
Proximity Effects ◽  
Next Generation ◽  
Polyhedral Oligosilsesquioxane ◽  
Ion Beam Lithography ◽  
New Class ◽  
Next Generation Lithography

AbstractThe SIA roadmap predicts mass production of sub-100 nm resolution circuits by 2006. This not only imposes major constraints on next generation lithographic tools but also requires that new resists capable of accommodating such a high resolution be synthesized and developed concurrently. Except for ion beam lithography, DUV, X-ray, and in particular electron beam lithography suffer significantly from proximity effects, leading to severe degradation of resolution in classical resists. We report a new class of resists based on organic/inorganic nanocomposites having a structure that reduces the proximity effects. Synthetic routes are described for a ZEP520®nano-SiO2 resist where 47nm wide lines have been written with a 40 nm diameter, 20 keV electron beam at no sensitivity cost. Other resist systems based on polyhedral oligosilsesquioxane copolymerized with MMA, TBMA, MMA and a proprietary PAG are also presented. These nanocomposite resists suitable for DUV and electron beam lithography show enhancement in both contrast and RIE resistance in oxygen. Tentative mechanisms responsible for proximity effect reduction are also discussed.

scholarly journals mr-PosEBR: a novel positive tone resist for high resolution electron beam lithography and 3D surface patterning

2016 ◽  
Author(s):  
Stefan Pfirrmann ◽  
Robert Kirchner ◽  
Olga Lohse ◽  
Vitaliy A. Guzenko ◽  
Anja Voigt ◽  
...  
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Electron Beam Lithography ◽  
Surface Patterning ◽  
3D Surface ◽  
Resolution Electron
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