Breaking the limits: combination of electron beam lithography and nanoimprint lithography for production of next-generation magnetic media and optical media

2008 ◽  
Author(s):  
Babak Heidari ◽  
Marc Beck
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Nanoimprint Lithography ◽  
Magnetic Media ◽  
Next Generation ◽  
Optical Media

High Resolution Resists for Next Generation Lithography: The Nanocomposite Approach

2000 ◽  
Vol 636 ◽  
Author(s):  
Kenneth E. Gonsalves ◽  
Hengpeng Wu ◽  
Yongqi Hu ◽  
Lhadi Merhari
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Electron Beam Lithography ◽  
Ion Beam ◽  
Proximity Effects ◽  
Next Generation ◽  
Polyhedral Oligosilsesquioxane ◽  
Ion Beam Lithography ◽  
New Class ◽  
Next Generation Lithography

AbstractThe SIA roadmap predicts mass production of sub-100 nm resolution circuits by 2006. This not only imposes major constraints on next generation lithographic tools but also requires that new resists capable of accommodating such a high resolution be synthesized and developed concurrently. Except for ion beam lithography, DUV, X-ray, and in particular electron beam lithography suffer significantly from proximity effects, leading to severe degradation of resolution in classical resists. We report a new class of resists based on organic/inorganic nanocomposites having a structure that reduces the proximity effects. Synthetic routes are described for a ZEP520®nano-SiO2 resist where 47nm wide lines have been written with a 40 nm diameter, 20 keV electron beam at no sensitivity cost. Other resist systems based on polyhedral oligosilsesquioxane copolymerized with MMA, TBMA, MMA and a proprietary PAG are also presented. These nanocomposite resists suitable for DUV and electron beam lithography show enhancement in both contrast and RIE resistance in oxygen. Tentative mechanisms responsible for proximity effect reduction are also discussed.

scholarly journals Silicon Metalens Fabrication from Electron Beam to UV-Nanoimprint Lithography

Nanomaterials ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 2329
Author(s):  
Angela Mihaela Baracu ◽  
Marius Andrei Avram ◽  
Carmen Breazu ◽  
Mihaela-Cristina Bunea ◽  
Marcela Socol ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Nanoimprint Lithography ◽  
Pattern Transfer ◽  
Silicon Substrates ◽  
Ion Etching ◽  
Deep Reactive Ion Etching ◽  
Transfer Processes ◽  
Low Efficiency ◽  
Design And Manufacture

This study presents the design and manufacture of metasurface lenses optimized for focusing light with 1.55 µm wavelength. The lenses are fabricated on silicon substrates using electron beam lithography, ultraviolet-nanoimprint lithography and cryogenic deep reactive-ion etching techniques. The designed metasurface makes use of the geometrical phase principle and consists of rectangular pillars with target dimensions of height h = 1200 nm, width w = 230 nm, length l = 354 nm and periodicity p = 835 nm. The simulated efficiency of the lens is 60%, while the master lenses obtained by using electron beam lithography are found to have an efficiency of 45%. The lenses subsequently fabricated via nanoimprint are characterized by an efficiency of 6%; the low efficiency is mainly attributed to the rounding of the rectangular nanostructures during the pattern transfer processes from the resist to silicon due to the presence of a thicker residual layer.

Next generation electron beam lithography system F7000 for wide range applications

2013 ◽  
Author(s):  
Hirofumi Hayakawa ◽  
Masahiro Takizawa ◽  
Masaki Kurokawa ◽  
Akiyoshi Tsuda ◽  
Masami Takigawa ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Next Generation ◽  
Wide Range ◽  
Lithography System
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