Influence of the development process on ultimate resolution electron beam lithography, using ultrathin hydrogen silsesquioxane resist layers

Anda E. Grigorescu; Marco C. van der Krogt; Cees W. Hagen; Pieter Kruit

doi:10.1116/1.2794316

Influence of the development process on ultimate resolution electron beam lithography, using ultrathin hydrogen silsesquioxane resist layers

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2794316 ◽

2007 ◽

Vol 25 (6) ◽

pp. 1998 ◽

Cited By ~ 21

Author(s):

Anda E. Grigorescu ◽

Marco C. van der Krogt ◽

Cees W. Hagen ◽

Pieter Kruit

Keyword(s):

Electron Beam ◽

Electron Beam Lithography ◽

Development Process ◽

Hydrogen Silsesquioxane ◽

Resolution Electron

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Influence of hydrogen silsesquioxane resist exposure temperature on ultrahigh resolution electron beam lithography

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2987965 ◽

2008 ◽

Vol 26 (6) ◽

pp. 2049-2053 ◽

Cited By ~ 12

Author(s):

Vadim Sidorkin ◽

Emile van der Drift ◽

Huub Salemink

Keyword(s):

Electron Beam ◽

Electron Beam Lithography ◽

Hydrogen Silsesquioxane ◽

Ultrahigh Resolution ◽

Exposure Temperature ◽

Resolution Electron

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Hydrogen silsesquioxane bilayer resists—Combining high resolution electron beam lithography and gentle resist removal

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4822136 ◽

2013 ◽

Vol 31 (6) ◽

pp. 06F102 ◽

Cited By ~ 2

Author(s):

Marcus Rommel ◽

Jürgen Weis

Keyword(s):

Electron Beam ◽

High Resolution ◽

Electron Beam Lithography ◽

Hydrogen Silsesquioxane ◽

Resolution Electron

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High resolution electron beam lithography on CaF2

Applied Physics Letters ◽

10.1063/1.94769 ◽

1984 ◽

Vol 44 (4) ◽

pp. 468-469 ◽

Cited By ~ 38

Author(s):

P. M. Mankiewich ◽

H. G. Craighead ◽

T. R. Harrison ◽

A. H. Dayem

Keyword(s):

Electron Beam ◽

High Resolution ◽

Electron Beam Lithography ◽

Resolution Electron

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Realization of ultra-thin HSQ resist layer for high resolution electron beam lithography using liquid splitting process

Microelectronic Engineering ◽

10.1016/j.mee.2014.05.011 ◽

2014 ◽

Vol 123 ◽

pp. 62-64

Author(s):

Jung Wuk Kim ◽

Jens Bolten ◽

Christian Moormann ◽

Heinrich Kurz

Keyword(s):

Electron Beam ◽

High Resolution ◽

Electron Beam Lithography ◽

Resolution Electron ◽

Splitting Process

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High-throughput, high-resolution electron beam lithography

Microelectronics Reliability ◽

10.1016/0026-2714(89)90139-x ◽

1989 ◽

Vol 29 (6) ◽

pp. 1104

Keyword(s):

Electron Beam ◽

High Resolution ◽

High Throughput ◽

Electron Beam Lithography ◽

Resolution Electron

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Two-step resist-development process of hydrogen silsesquioxane for high-density electron-beam nanopatterning

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3049482 ◽

2009 ◽

Vol 27 (1) ◽

pp. 188 ◽

Cited By ~ 19

Author(s):

Hyo-Sung Lee ◽

Jung-Sub Wi ◽

Sung-Wook Nam ◽

Hyun-Mi Kim ◽

Ki-Bum Kim

Keyword(s):

Electron Beam ◽

Development Process ◽

High Density ◽

Hydrogen Silsesquioxane

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High-performance negative electron affinity photocathodes for high resolution electron beam lithography and metrology

Proceedings of International Electron Devices Meeting ◽

10.1109/iedm.1995.499226 ◽

2002 ◽

Cited By ~ 2

Author(s):

A.W. Baum ◽

J.E. Schneider ◽

R.F.W. Pease

Keyword(s):

Electron Beam ◽

High Resolution ◽

Electron Affinity ◽

Electron Beam Lithography ◽

High Performance ◽

Negative Electron Affinity ◽

Resolution Electron

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Fabrication of sub-10 nm silicon carbon nitride resonators using a hydrogen silsesquioxane mask patterned by electron beam lithography

Microelectronic Engineering ◽

10.1016/j.mee.2010.11.045 ◽

2011 ◽

Vol 88 (8) ◽

pp. 2338-2341 ◽

Cited By ~ 13

Author(s):

M.A. Mohammad ◽

S.K. Dew ◽

S. Evoy ◽

M. Stepanova

Keyword(s):

Electron Beam ◽

Electron Beam Lithography ◽

Carbon Nitride ◽

Hydrogen Silsesquioxane ◽

Silicon Carbon ◽

Silicon Carbon Nitride

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Effect of time-dependent development process on the limit of proximity exposure compensation in electron beam lithography

Microelectronics Reliability ◽

10.1016/0026-2714(91)90295-i ◽

1991 ◽

Vol 31 (6) ◽

pp. 1091-1096 ◽

Cited By ~ 4

Author(s):

P.R. Deshmukh ◽

W.S. Khokle

Keyword(s):

Electron Beam ◽

Electron Beam Lithography ◽

Development Process ◽

Time Dependent ◽

Dependent Development

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Quantum interference devices fabricated using molecular-beam epitaxy and ultra-high-resolution electron-beam lithography

IEEE Transactions on Electron Devices ◽

10.1109/16.43733 ◽

1989 ◽

Vol 36 (11) ◽

pp. 2617-2618

Author(s):

S.Y. Chou ◽

D.R. Alee ◽

R.F.W. Pease ◽

J.S. Harris

Keyword(s):

Electron Beam ◽

High Resolution ◽

Molecular Beam Epitaxy ◽

Electron Beam Lithography ◽

Quantum Interference ◽

Molecular Beam ◽

Resolution Electron

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