A novel junction field plates AlGaN/GaN heterostructure field effect transistors with high breakdown voltage and Baliga's figure of merit for power electronics application

2018 ◽  
Author(s):  
Zhiyuan Bai ◽  
Jiangfeng Du ◽  
Qi Yu
Keyword(s):  
Power Electronics ◽  
Breakdown Voltage ◽  
Field Effect ◽  
Figure Of Merit ◽  
Field Effect Transistors ◽  
High Breakdown Voltage ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

AlGaN/GaN Heterostructure Field-Effect Transistors on Fe-Doped GaN Substrates with High Breakdown Voltage

2011 ◽  
Vol 50 (8R) ◽  
pp. 084102 ◽  
Author(s):  
Yoshinori Oshimura ◽  
Takayuki Sugiyama ◽  
Kenichiro Takeda ◽  
Motoaki Iwaya ◽  
Tetsuya Takeuchi ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Breakdown Voltage ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

AlGaN/GaN Heterostructure Field-Effect Transistors on Fe-Doped GaN Substrates with High Breakdown Voltage

2011 ◽  
Vol 50 (8) ◽  
pp. 084102
Author(s):  
Yoshinori Oshimura ◽  
Takayuki Sugiyama ◽  
Kenichiro Takeda ◽  
Motoaki Iwaya ◽  
Tetsuya Takeuchi ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Breakdown Voltage ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

High-breakdown voltage Al0.66In0.34As0.85Sb0.15/In0.75Ga0.25As/InP heterostructure field-effect transistors

1996 ◽  
Vol 32 (22) ◽  
pp. 2095 ◽  
Author(s):  
Jan-Shing Su ◽  
Wei-Chou Hsu ◽  
Dong-Tsuen Lin ◽  
Wei Lin ◽  
Hung-Pin Shiao ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Breakdown Voltage ◽  
Heterostructure Field Effect Transistors
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