Si3N4/AlGaN/GaN–metal–insulator–semiconductor heterostructure field–effect transistors

X. Hu; A. Koudymov; G. Simin; J. Yang; M. Asif Khan; A. Tarakji; M. S. Shur; R. Gaska

doi:10.1063/1.1412591

Si3N4/AlGaN/GaN–metal–insulator–semiconductor heterostructure field–effect transistors

Applied Physics Letters ◽

10.1063/1.1412591 ◽

2001 ◽

Vol 79 (17) ◽

pp. 2832-2834 ◽

Cited By ~ 209

Author(s):

X. Hu ◽

A. Koudymov ◽

G. Simin ◽

J. Yang ◽

M. Asif Khan ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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Poole Frenkel current and Schottky emission in SiN gate dielectric in AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors

Applied Physics Letters ◽

10.1063/1.4758995 ◽

2012 ◽

Vol 101 (15) ◽

pp. 153504 ◽

Cited By ~ 21

Author(s):

Mina J. Hanna ◽

Han Zhao ◽

Jack C. Lee

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Schottky Emission ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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High-breakdown-voltage AlGaN-channel metal-insulator-semiconductor heterostructure field-effect transistors employing a quaternary AlGaInN barrier layer and an Al2O3 gate insulator

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.5097338 ◽

2019 ◽

Vol 37 (4) ◽

pp. 041205 ◽

Cited By ~ 1

Author(s):

Daiki Hosomi ◽

Keita Furuoka ◽

Heng Chen ◽

Saki Saito ◽

Toshiharu Kubo ◽

...

Keyword(s):

Breakdown Voltage ◽

Barrier Layer ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Insulator ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

High Breakdown Voltage ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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Submicron gate Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors

IEEE Electron Device Letters ◽

10.1109/led.2003.816574 ◽

2003 ◽

Vol 24 (9) ◽

pp. 541-543 ◽

Cited By ~ 65

Author(s):

V. Adivarahan ◽

M. Gaevski ◽

W.H. Sun ◽

H. Fatima ◽

A. Koudymov ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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Electrical characteristics of AlGaN/GaN metal-insulator semiconductor heterostructure field-effect transistors on sapphire substrates

Journal of Electronic Materials ◽

10.1007/s11664-003-0157-4 ◽

2003 ◽

Vol 32 (5) ◽

pp. 350-354 ◽

Cited By ~ 7

Author(s):

W. S. Tan ◽

P. A. Houston ◽

G. Hill ◽

R. J. Airey ◽

P. J. Parbook

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electrical Characteristics ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Sapphire Substrates ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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Characterization and optimization of AlGaN/GaN metal-insulator semiconductor heterostructure field effect transistors using supercritical CO2/H2O technology

Chinese Physics B ◽

10.1088/1674-1056/abb22f ◽

2020 ◽

Vol 29 (12) ◽

pp. 127101

Author(s):

Meihua Liu ◽

Zhangwei Huang ◽

Kuan-Chang Chang ◽

Xinnan Lin ◽

Lei Li ◽

...

Keyword(s):

Supercritical Co2 ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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Performance of AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors with AlN gate insulator prepared by reactive magnetron sputtering

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3523362 ◽

2011 ◽

Vol 29 (1) ◽

pp. 01A809 ◽

Cited By ~ 9

Author(s):

R. Stoklas ◽

D. Gregušová ◽

Š. Gaži ◽

J. Novák ◽

P. Kordoš

Keyword(s):

Magnetron Sputtering ◽

Field Effect ◽

Field Effect Transistors ◽

Reactive Magnetron Sputtering ◽

Gate Insulator ◽

Reactive Magnetron ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors

Micromachines ◽

10.3390/mi10110723 ◽

2019 ◽

Vol 10 (11) ◽

pp. 723

Author(s):

Dongmin Keum ◽

Hyungtak Kim

Keyword(s):

Field Effect ◽

Proton Irradiation ◽

Dielectric Breakdown ◽

Field Effect Transistors ◽

Time Dependent ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Time Dependent Dielectric Breakdown ◽

Vertical Field ◽

Heterostructure Field Effect Transistors

In this work, we investigated the time-dependent dielectric breakdown (TDDB) characteristics of normally-off AlGaN/GaN gate-recessed metal–insulator–semiconductor (MIS) heterostructure field effect transistors (HFETs) submitted to proton irradiation. TDDB characteristics of normally-off AlGaN/GaN gate-recessed MISHFETs exhibited a gate voltage (VGS) dependence as expected and showed negligible degradation even after proton irradiation. However, a capture emission time (CET) map and cathodoluminescence (CL) measurements revealed that the MIS structure was degraded with increasing trap states. A technology computer aided design (TCAD) simulation indicated the decrease of the vertical field beneath the gate due to the increase of the trap concentration. Negligible degradation of TDDB can be attributed to this mitigation of the vertical field by proton irradiation.

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Enhancement-mode metal–insulator–semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0 V and blocking voltage above 1000 V

Applied Physics Express ◽

10.7567/apex.8.036502 ◽

2015 ◽

Vol 8 (3) ◽

pp. 036502 ◽

Cited By ~ 6

Author(s):

Kean B. Lee ◽

Ivor Guiney ◽

Sheng Jiang ◽

Zaffar H. Zaidi ◽

Hongtu Qian ◽

...

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Enhancement Mode ◽

Blocking Voltage ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Effect of AlN growth temperature on trap densities ofin-situmetal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors

AIP Advances ◽

10.1063/1.4722642 ◽

2012 ◽

Vol 2 (2) ◽

pp. 022134 ◽

Cited By ~ 7

Author(s):

Joseph J. Freedsman ◽

Toshiharu Kubo ◽

Takashi Egawa

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Organic Chemical ◽

Metal Insulator ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors ◽

Organic Chemical Vapor Deposition

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Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN/SiC Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors With Symmetrically-Graded Widegap Channel

IEEE Journal of the Electron Devices Society ◽

10.1109/jeds.2019.2956497 ◽

2020 ◽

Vol 8 ◽

pp. 9-14 ◽

Cited By ~ 1

Author(s):

Ching-Sung Lee ◽

Yan-Ting Shen ◽

Wei-Chou Hsu ◽

Yi-Ping Huang ◽

Cheng-Yang You

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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