Particle behavior and its contribution to film growth in a remote silane plasma

2018 ◽  
Vol 36 (5) ◽  
pp. 050601 ◽  
Author(s):  
Yeonwon Kim ◽  
Kazunori Koga ◽  
Masaharu Shiratani
Keyword(s):  
Film Growth ◽  
Particle Behavior ◽  
Silane Plasma

Trapping of Atomic Hydrogen in a-Si:H from G – D Silane Plasma

1989 ◽  
Vol 149 ◽  
Author(s):  
S. A. Cruz-Jimenez ◽  
S. Muhl ◽  
R. Salcedo
Keyword(s):  
Amorphous Materials ◽  
Film Growth ◽  
Film Formation ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Full Description ◽  
Gas Phase Reactions ◽  
Hydrogen Saturation ◽  
Identical Material ◽  
Silane Plasma

Plasma Enhanced Chemical Vapor Deposition CPECVD) is used extensively for the preparation of amorphous materials. However, to date we do not have a full description of the deposition process. By this we refer to the following steps ; the source gas decomposition [1], the gas phase reactions, diffusion within the plasma [a], adsorption of the various species, solid-gas reactions, nucleation and subsequent film growth [3–7]. To a large extent the diversity of the processes which are involved in film formation explain the observed variation in the characteristics of supposedly identical material made in different laboratories. Even with such variations certain trends relating the properties of the materials with the growth processes are apparent. In particular it is well established that hydrogen saturation of the dangling bonds is essential. Although how much hydrogen is optimum, and how it is incorporated in the growing film are questions of considerable importance.

High-Rate Growth of Stable a-Si:H

1999 ◽  
Vol 557 ◽  
Author(s):  
T. Takagi ◽  
R. Hayashi ◽  
A. Payne ◽  
W. Futako ◽  
T. Nishimoto ◽  
...  
Keyword(s):  
Vapour Deposition ◽  
Film Growth ◽  
Density Ratio ◽  
Excitation Frequency ◽  
Chemical Vapour ◽  
High Growth ◽  
High Growth Rate ◽  
High Rate ◽  
Hydrogenated Amorphous ◽  
Silane Plasma

AbstractCorrelation between the gas phase species in silane plasma measured by mass spectrometry and the properties of hydrogenated amorphous silicon (a-Si:H) films deposited by plasma enhanced chemical vapour deposition (PECVD) has been investigated. We have especially been interested in the higher-order silane related species in the plasma, whose contribution to the film growth is considered to be the cause of light-induced degradation in the film quality, especially at high growth rate. In this study, we varied excitation frequency, gas pressure and power density to vary the growth rates of a-Si:H films ranging from 2 Å/s to 20 Å/s.Molecular density ratio of trisilane, representative of higher silane related radicals, to monosilane has shown a clear correspondence to the fill factor after light soaking of Schottky cells fabricated on the resulting films.

Experimental Study of Silane Plasma Nanoparticle Formation in Amorphous Silicon Thin Films

2005 ◽  
Vol 862 ◽  
Author(s):  
S. Thompson ◽  
C. R. Perrey ◽  
T. J. Belich ◽  
C. Blackwell ◽  
C. B. Carter ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Thermal Gradient ◽  
Film Growth ◽  
Film Surface ◽  
Chemical Vapor ◽  
Transmission Electron Microscopy Image ◽  
Capacitively Coupled ◽  
Nanoparticle Formation ◽  
Silicon Thin Films ◽  
Silane Plasma

AbstractRF glow discharge deposited hydrogenated amorphous silicon films containing silicon nanocrystalline inclusions (a/nc-Si:H) films are investigated as a function of a thermal gradient applied across the silane plasma during film growth. The a/nc-Si:H films are synthesized from hydrogen-diluted silane plasmas when a capacitively-coupled plasma enhanced chemical vapor deposition reactor is operated at high gas chamber pressures. Plasma diagnostics and transmission electron microscopy image analysis of films deposited with and without a thermal gradient suggest that nanoparticle formation occurs within the plasma, rather than resulting from solid-state nucleation at the growing film surface.

Remote Silane Plasma Chemistry Effects and their Correlation with a-Si:H Film Properties

1999 ◽  
Vol 557 ◽  
Author(s):  
W.M.M. Kessels ◽  
A.H.M. Smets ◽  
B.A. Korevaar ◽  
G.J. Adriaenssens ◽  
M.C.M. Van de Sanden ◽  
...  
Keyword(s):  
Solar Cell ◽  
Plasma Diagnostics ◽  
Film Growth ◽  
Plasma Chemistry ◽  
Reactive Species ◽  
Drift Mobility ◽  
Remote Plasma ◽  
Film Properties ◽  
First Results ◽  
Silane Plasma

AbstractA remote silane plasma, capable of depositing solar grade a-Si:H at a rate of 10 nm/s and with an up to ten times higher hole drift mobility than standard a-Si:H, has been investigated by means of several plasma diagnostics. The creation of the different reactive species in the plasma and their contribution to film growth has been analyzed and is correlated with the film properties obtained under various conditions. Furthermore, the first results on a n-i-p solar cell with the intrinsic a-Si:H film deposited by this remote plasma are presented.

Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

1973 ◽  
Vol 31 ◽  
pp. 122-123
Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson
Keyword(s):  
Epitaxial Growth ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Microscopy Technique ◽  
Direct Observations ◽  
In Situ Electron Microscopy ◽  
Beam Sputtering ◽  
The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

Microstructural characterization of YBa2Cu3O7-x thin films formed by metalorganic CVD

1991 ◽  
Vol 49 ◽  
pp. 1080-1081
Author(s):  
P. Lu ◽  
W. Huang ◽  
C.S. Chern ◽  
Y.Q. Li ◽  
J. Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Film Growth ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Ion Milling ◽  
Conventional Grinding

The YBa2Cu3O7-x thin films formed by metalorganic chemical vapor deposition(MOCVD) have been reported to have excellent superconducting properties including a sharp zero resistance transition temperature (Tc) of 89 K and a high critical current density of 2.3x106 A/cm2 or higher. The origin of the high critical current in the thin film compared to bulk materials is attributed to its structural properties such as orientation, grain boundaries and defects on the scale of the coherent length. In this report, we present microstructural aspects of the thin films deposited on the (100) LaAlO3 substrate, which process the highest critical current density.Details of the thin film growth process have been reported elsewhere. The thin films were examined in both planar and cross-section view by electron microscopy. TEM sample preparation was carried out using conventional grinding, dimpling and ion milling techniques. Special care was taken to avoid exposure of the thin films to water during the preparation processes.

The annealed (0001) α-alumina surface and its influence on thin-film growth

1995 ◽  
Vol 53 ◽  
pp. 336-337
Author(s):  
Michael W. Bench ◽  
Paul G. Kotula ◽  
C. Barry Carter
Keyword(s):  
Electron Microscopy ◽  
Surface Energy ◽  
Film Growth ◽  
Thin Film Growth ◽  
Energy Calculations ◽  
Transmission Electron ◽  
Reflection Electron Microscopy ◽  
Low Energy Electron ◽  
Surface Nature

The growth of semiconductors, superconductors, metals, and other insulators has been investigated using alumina substrates in a variety of orientations. The surface state of the alumina (for example surface reconstruction and step nature) can be expected to affect the growth nature and quality of the epilayers. As such, the surface nature has been studied using a number of techniques including low energy electron diffraction (LEED), reflection electron microscopy (REM), transmission electron microscopy (TEM), molecular dynamics computer simulations, and also by theoretical surface energy calculations. In the (0001) orientation, the bulk alumina lattice can be thought of as a layered structure with A1-A1-O stacking. This gives three possible terminations of the bulk alumina lattice, with theoretical surface energy calculations suggesting that termination should occur between the Al layers. Thus, the lattice often has been described as being made up of layers of (Al-O-Al) unit stacking sequences. There is a 180° rotation in the surface symmetry of successive layers and a total of six layers are required to form the alumina unit cell.

Direct STEM ADF imaging of gold on silicon (111)

1989 ◽  
Vol 47 ◽  
pp. 472-473
Author(s):  
P. Xu ◽  
E. J. Kirkland ◽  
J. Silcox
Keyword(s):  
Film Growth ◽  
Heavy Atom ◽  
High Vacuum ◽  
Dark Field ◽  
Thin Metal Film ◽  
Base Pressure ◽  
Ultra High Vacuum ◽  
Specimen Preparation ◽  
Dark Field Imaging ◽  
Wide Range

Many studies of thin metal film growth and the formation of metal-semiconductor contacts have been performed using a wide range of experimental methods. STEM annular dark field imaging could be an important complement since it may allow direct imaging of a single heavy atom on a thin silicon substrate. This would enable studies of the local atomic arrangements and defects in the initial stage of metal silicide formation.Preliminary experiments were performed in an ultra-high vacuum VG HB501A STEM with a base pressure of 1 × 10-10 mbar. An antechamber directly attached to the microscope for specimen preparation has a base pressure of 2×l0-10 mbar. A thin single crystal membrane was fabricated by anodic etching and subsequent reactive etching. The specimen was cleaned by the Shiraki method and had a very thin oxide layer left on the surface. 5 Å of gold was deposited on the specimen at room temperature from a tungsten filament coil monitored by a quartz crystal monitor.

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