Remote Silane Plasma Chemistry Effects and their Correlation with a-Si:H Film Properties

1999 ◽  
Vol 557 ◽  
Author(s):  
W.M.M. Kessels ◽  
A.H.M. Smets ◽  
B.A. Korevaar ◽  
G.J. Adriaenssens ◽  
M.C.M. Van de Sanden ◽  
...  
Keyword(s):  
Solar Cell ◽  
Plasma Diagnostics ◽  
Film Growth ◽  
Plasma Chemistry ◽  
Reactive Species ◽  
Drift Mobility ◽  
Remote Plasma ◽  
Film Properties ◽  
First Results ◽  
Silane Plasma

AbstractA remote silane plasma, capable of depositing solar grade a-Si:H at a rate of 10 nm/s and with an up to ten times higher hole drift mobility than standard a-Si:H, has been investigated by means of several plasma diagnostics. The creation of the different reactive species in the plasma and their contribution to film growth has been analyzed and is correlated with the film properties obtained under various conditions. Furthermore, the first results on a n-i-p solar cell with the intrinsic a-Si:H film deposited by this remote plasma are presented.

Material Dependence Of The contaminating Film Growth On In-Vessel Mirrors For Plasma Diagnostics

2008 ◽  
Author(s):  
V. S. Voitsenya ◽  
G. De. Temmerman ◽  
M. Lipa ◽  
R. A. Pitts ◽  
B. Schunke ◽  
...  
Keyword(s):  
Plasma Diagnostics ◽  
Film Growth

Cu(In,Ga)S2 Phase Formation from Metallic Cu-In-Ga Precursor Stacks in Rapid Thermal Processes

2001 ◽  
Vol 668 ◽  
Author(s):  
Axel Neisser ◽  
Jacobo Álvarez-García ◽  
Lorenzo Calvo-Barrio ◽  
Reiner Klenk ◽  
Thomas W. Matthes ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Phase Formation ◽  
Thin Film Solar Cell ◽  
Depth Distribution ◽  
Film Growth ◽  
Thermal Processes ◽  
Sulfur Vapor ◽  
Thermal Systems

ABSTRACTThis contribution compares the growth of Cu(Ga,In)S2 based thin film solar cell absorbers in rapid thermal systems using sulfur vapor Sx or H2S/Ar as reactive atmosphere, focusing on Ga-related influences on film growth and phase formation. Cu-In alloying in the precursor is kinetically hindered by the presence of Cu-Ga phases. In sulfur vapor Ga-containing samples sulfurize via an intermediate CuIn2S8 phase, thereby delaying the full sulfurization and recrystallization of the layer. In contrast, in H2S/Ar fast Ga-In interdiffusion and no intermediate chalcogenide phases are observed. The inhomogeneous Ga depth distribution usually reported for sequentially prepared Cu(In,Ga)S2 films can be assigned to the segregation of CuGaS2 prior to CuInS2.

scholarly journals Effects of Photonic Curing Processing Conditions on MAPbI3 Film Properties and Solar Cell Performance

2020 ◽  
Vol 3 (9) ◽  
pp. 8636-8645
Author(s):  
Weijie Xu ◽  
Trey B. Daunis ◽  
Robert T. Piper ◽  
Julia W.P. Hsu
Keyword(s):  
Solar Cell ◽  
Cell Performance ◽  
Processing Conditions ◽  
Film Properties ◽  
Solar Cell Performance ◽  
Photonic Curing

tudies on Titanium Nitride Coatings - Effect of Ion Bombardment

2000 ◽  
Vol 647 ◽  
Author(s):  
K. Deenamma Vargheese ◽  
G. Mohan Rao
Keyword(s):  
Titanium Nitride ◽  
Electron Cyclotron Resonance ◽  
Film Growth ◽  
Morphological Changes ◽  
Ion Bombardment ◽  
Ion Flux ◽  
Film Properties ◽  
Ion Energy ◽  
Ecr Plasma ◽  
Plasma Sputtering

AbstractIon bombardment during thin film growth is known to cause structural and morphological changes in the deposited films and thus affecting the film properties. These effects can be due to the variation in the bombarding ion flux or their energy. We have deposited titanium nitride films by two distinctly different methods, viz. Electron Cyclotron Resonance (ECR) plasma sputtering and bias assisted reactive magnetron sputtering. The former represents low energy (typically less than 30 eV) but high density plasma (1011cm−3), whereas, in the latter case the ion energy is controlled by varying the bias to the substrate (typically a few hundred volts) but the ion flux is low (109cm−3). The deposited titanium nitride films are characterized for their structure, grain size, surface roughness and electrical resistivity.

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