Trapping of Atomic Hydrogen in a-Si:H from G – D Silane Plasma

1989 ◽  
Vol 149 ◽  
Author(s):  
S. A. Cruz-Jimenez ◽  
S. Muhl ◽  
R. Salcedo
Keyword(s):  
Amorphous Materials ◽  
Film Growth ◽  
Film Formation ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Full Description ◽  
Gas Phase Reactions ◽  
Hydrogen Saturation ◽  
Identical Material ◽  
Silane Plasma

Plasma Enhanced Chemical Vapor Deposition CPECVD) is used extensively for the preparation of amorphous materials. However, to date we do not have a full description of the deposition process. By this we refer to the following steps ; the source gas decomposition [1], the gas phase reactions, diffusion within the plasma [a], adsorption of the various species, solid-gas reactions, nucleation and subsequent film growth [3–7]. To a large extent the diversity of the processes which are involved in film formation explain the observed variation in the characteristics of supposedly identical material made in different laboratories. Even with such variations certain trends relating the properties of the materials with the growth processes are apparent. In particular it is well established that hydrogen saturation of the dangling bonds is essential. Although how much hydrogen is optimum, and how it is incorporated in the growing film are questions of considerable importance.

Chemical vapor deposition of cobalt using novel cobalt(I) precursors

2002 ◽  
Vol 17 (2) ◽  
pp. 267-270 ◽  
Author(s):  
Hyungsoo Choi ◽  
Sungho Park ◽  
Ho G. Jang
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Chemical Vapor Deposition Method ◽  
Gas Phase Reactions ◽  
Reaction Conditions ◽  
Hydride Complexes ◽  
Cobalt Thin Films ◽  
Substrate Temperatures

The deposition of cobalt thin films from cobalt hydride complexes, HCo[P(OR)3]4, where R = methyl, ethyl, i-propyl, and n-butyl, by a chemical vapor deposition method is reported. The new cobalt precursors deposited high-purity cobalt films at substrate temperatures as low as 300 °C without employing hydrogen. The deposited Co films showed smooth and dense surface morphology. The microstructure and growth rate of the deposited films depended on the reaction conditions such as substrate temperature and precursor feed. No gas phase reactions were observed during the deposition process.

Thin YSZ Electrolyte Film Depositions on Dense and Porous Substrates

Materials ◽  
2003 ◽  
Author(s):  
Zhigang Xu ◽  
Corydon Hilton ◽  
Bobby Watkins ◽  
Sergey Yarmolenko ◽  
Jag Sankar
Keyword(s):  
Growth Rate ◽  
Film Growth ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Lanthanum Manganite ◽  
Deposition Parameters ◽  
Pore Sealing ◽  
Complex Deposition ◽  
Initial Deposition ◽  
Ysz Electrolyte

Yttria stabilized zirconia (YSZ) thin films have been processed on polished silicon and porous strontium-doped lanthanum manganite (LSM) substrates by liquid fuel combustion chemical vapor deposition from combustion of an aerosol jet. The aerosol jet consists of Y- and Zr- containing metalorganics dissolved in toluene and high-purity oxygen. The morphology and thickness of the deposited films have been analyzed with scanning electron microscope. On the polished silicon substrates, thin and uniform films have been obtained. The grain growth rate is of the first order of the deposition time. The film growth rate was greatly enhanced by utilizing higher precursor concentrations, proper substrate temperature and the effect of thermophoresis. However, when the porous substrate is being coated, a more complex deposition process takes place. The initial deposition seems to be favored on the surface protrusions. Therefore, the covered areas serve as nucleation sites and the grains start to grow, giving rise to larger particles and rougher surface than the films on polished silicon. To enhance the pore-sealing rate, some pre-treatments and post-treatment have been used. Moreover, deposition parameters towards fast pore sealing have been investigated. Thin and continuous films with the film thickness less than 3 μm have been obtained.

Studies of SiH2Ci2/H2 Gas Phase Chemistry for Selective Thin Film Growth of Crystalline Silicon, c-Si, Using Remote Plasma Enhanced Chemical Vapor Deposition

1991 ◽  
Vol 220 ◽  
Author(s):  
J. A. Theil ◽  
G. Lucovsky ◽  
S. V. Hattangady ◽  
G. G. Fountain ◽  
R. J. Markunas
Keyword(s):  
Gas Phase ◽  
Film Growth ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Film Deposition ◽  
Selective Deposition ◽  
Gas Phase Chemistry ◽  
Phase Chemistry

ABSTRACTConventional high temperature, >800°C, CVD processes, utilizing SiH2Ci2 promote selective deposition of c-Si onto c-Si, but not on SiO2 surfaces. We show that low temperature, 300°C remote PECVD, with rf-excited He plasmas, and SiH2Ci2 and H2 injected downstream, also selectively deposits c-Si on c-Si and not SiO2 surfaces. This preliminary study employs in-situ mass spectrometry, MS, to determine the species responsible for selective deposition process reaction pathways. These MS studies suggest that species responsible for film deposition are Si-containing fragments of the SiH2Ci2 molecule, e.g., SiH2Ci, SiCi2H, etc., while the species responsible for inhibiting deposition on the SiO2 surfaces are by-products of the break-up of the SiH2Ci2 molecule in the gas phase, e.g., H-atoms, HCI and H2Ci+ ions.

Polycrystalline β-SiC Film Growth on Si by ECR-CVD at 178 - 500°C

1995 ◽  
Vol 403 ◽  
Author(s):  
Kuan-Lun Cheng ◽  
Chih-Chien Liu ◽  
Chung-Min Fu ◽  
Huang-Chung Cheng ◽  
Chiapyng Lee ◽  
...  
Keyword(s):  
Electron Cyclotron Resonance ◽  
Film Growth ◽  
Film Surface ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Dark Field ◽  
Cross Sectional ◽  
Dark Field Imaging ◽  
Transmission Electron ◽  
Field Imaging

AbstractPolycrystalline β-SiC, with grain size up to 0.2 μm, was grown on silicon substrate by electron cyclotron resonance chemical vapor deposition (ECR-CVD) from SiH4/CH4/H2 at 178–500 °C. The nucleation process and surface structure of polycrystalline SiC were investigated via observing the film surface by atomic force microscopy (AFM). Reaction species which promote polycrystalline SiC was in-situ monitored by quadruple mass spectrum analysers during deposition process, which is crucial for the control of polycrystalline SiC growth. The microstructure of SiC films were inspected by bright-field imaging, dark-field imaging, and electron diffraction in cross-sectional transmission electron microscopy. This paper will also discuss the key parameters for the nucleation and growth of polycrystalline β-SiC at very low temperature in ECR-CVD system.

scholarly journals Area Selective Deposition of Iron Films Using Temperature Sensitive Masking Materials and Plasma Electrons as Reducing Agents

2021 ◽  
Author(s):  
Hama Nadhom ◽  
Yusheng Yuan ◽  
Polla Rouf ◽  
Niclas Solin ◽  
Henrik Pedersen
Keyword(s):  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Reducing Agents ◽  
Film Deposition ◽  
Chemical Vapor Deposition Method ◽  
Temperature Sensitive ◽  
Film Material ◽  
Selective Deposition

<p>potential of area selective deposition (ASD) with a newly developed chemical vapor deposition method, which utilize plasma electrons as reducing agents for deposition of metal-containing films, is demonstrated using temperature sensitive polymer-based masking materials. The masking materials tested were polydimethylsiloxane (PDMS), polymethylmethacrylate (PMMA), polystyrene (PS), parafilm, Kapton tape, Scotch tape, and office paper. The masking materials were all shown to prevent film growth on the masked area of the substrate without being affected by the film deposition process. X-ray photoelectron spectroscopy analysis confirms that the films deposited consist mainly of iron, whereas no film material is found on the masked areas after mask removal. SEM analysis of films deposited with non-adhesive masking materials show that film growth extended for a small distance underneath the masking material, indicating that the CVD process with plasma electrons as reducing agents is not a line-of-sight deposition technique. The reported methodology introduces an inexpensive and straightforward approach for ASD that opens for exciting new possibilities for robust and less complex area selective metal-on-metal deposition. </p>

Numerical Simulation of GaN Growth in a Metalorganic Chemical Vapor Deposition Process

2013 ◽  
Vol 135 (6) ◽  
Author(s):  
Jiandong Meng ◽  
Yogesh Jaluria
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Operating Conditions ◽  
Operating Pressure ◽  
Reactor Performance ◽  
Metalorganic Chemical

A detailed mathematical model for the growth of gallium nitride in a vertical impinging metalorganic chemical vapor deposition (MOCVD) reactor is developed first, and the complete chemical mechanisms are introduced. Then, one validation study is conducted to ensure its accuracy. After that, the flow, temperature and concentration profiles are predicted by numerical modeling. The dependence of the growth rate and uniformity of the deposited layers on operating conditions, such as reactor operating pressure, susceptor temperature, inlet velocity and concentration ratio of the precursors, is investigated to gain greater insight into the reactor performance and characteristics. Based on the simulation results, discussion is presented in this paper to offer the possibility of better control of the GaN film growth process and to ultimately lead to an optimization of the process, with respect to production rate and film quality.

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