Double nanoimprint lithography: A technology for effectively reducing feature size

2017 ◽  
Vol 35 (6) ◽  
pp. 06G304
Author(s):  
Xiaohao Ma ◽  
Dandan Deng ◽  
Dehu Cui
Keyword(s):  
Nanoimprint Lithography ◽  
Feature Size

Stamp design effect on 100 nm feature size for 8 inch NanoImprint lithography

2006 ◽  
Vol 17 (10) ◽  
pp. 2701-2709 ◽  
Author(s):  
S Landis ◽  
N Chaix ◽  
C Gourgon ◽  
C Perret ◽  
T Leveder
Keyword(s):  
Nanoimprint Lithography ◽  
Feature Size ◽  
Design Effect

Fabrication of a Metal Roller Mold with Nanoimprinted Pattern Using Thermal Nanoimprint Lithography

2020 ◽  
Vol 12 (4) ◽  
pp. 481-485 ◽  
Author(s):  
Soongeun Kwon ◽  
Young-Jin Kim ◽  
Hyungjun Lim ◽  
Jaegu Kim ◽  
Kee-Bong Choi ◽  
...  
Keyword(s):  
Methyl Methacrylate ◽  
Nanoimprint Lithography ◽  
Laser Cutting ◽  
Pmma Film ◽  
Line Pattern ◽  
Large Area ◽  
Feature Size ◽  
Electroforming Process ◽  
Roller Body ◽  
Line Patterns

In this work, fabrication of a metal roller mold with nanoimprinted pattern was demonstrated. To get metal nanopattern on a metal roller mold, thermal nanoimprint lithography (TNIL) and subsequent electroforming process were conducted. A poly(methyl methacrylate) (PMMA) nanopattern was fabricated by TNIL process using a polydimethylsiloxane (PDMS) soft stamp on a bare PMMA film. An optimal experimental condition of TNIL process was investigated for large area, uniform PMMA nanopatterning. As a result, large area PMMA line patterns with 200 nm linewidth were fabricated by large-area TNIL process. Electroforming process on the PMMA nanopatterned film resulted in nickel (Ni) nanopattern with a linewidth of 200 nm from the PMMA line pattern. A large area (360 mm by 730 mm in width and length) Ni stamp for a roller mold was fabricated by laser cutting and tiling process of the multiple electroformed Ni stamps. We successfully fabricated a Ni roller mold with feature size of 200 nm in linewidth by attaching the large area Ni stamp to the surface of a roller body.

scholarly journals Exploration of the Direct Use of Anodized Alumina as a Mold for Nanoimprint Lithography to Fabricate Magnetic Nanostructure over Large Area

2011 ◽  
Vol 2011 ◽  
pp. 1-5 ◽  
Author(s):  
M. Tofizur Rahman ◽  
Hao Wang ◽  
Jian-Ping Wang
Keyword(s):  
Surface Chemistry ◽  
Nanoimprint Lithography ◽  
Pore Diameter ◽  
Large Area ◽  
Self Assembled Monolayer ◽  
Feature Size ◽  
Magnetic Nanostructure ◽  
Self Assembled ◽  
Direct Use ◽  
Si Wafer

We have explored the direct use of anodized alumina (AAO) fabricated on an Si wafer as a mold for the nanoimprint lithography (NIL). The AAO mold has been fabricated over more than 10 cm2area with two different pore diameters of163±24 nm and73±7 nm. One of the key challenges of the lack of bonding between the antisticking self-assembled monolayer (SAM) and the AAO has been overcome by modifying the surface chemistry of the fabricated AAO mold by coating it with thin SiO2layer. Then we have applied the commonly used silane-based self-assembled monolayer (SAM) on these SiO2-coated AAO molds and achieved successful imprinting of resist pillars with feature size of172±25 nm by using the mold with a pore diameter of163±24 nm. Finally, we have achieved (001) oriented L10FePt patterned structure with a dot diameter of42±4 nm by using a AAO mold with a pore diameter of73±7 nm. The perpendicularHcof the unpatterned and patterned FePt is about 3.3 kOe and 12 kOe, respectively. These results indicate that AAO mold can potentially be used in NIL for fabricating patterned nanostructures over large area.

Fabrication of circular optical structures with a 20 nm minimum feature size using nanoimprint lithography

2000 ◽  
Vol 76 (6) ◽  
pp. 673-675 ◽  
Author(s):  
Mingtao Li ◽  
Jian Wang ◽  
Lei Zhuang ◽  
Stephen Y. Chou
Keyword(s):  
Nanoimprint Lithography ◽  
Feature Size ◽  
Minimum Feature Size ◽  
20 Nm

A New Approach for SRAM Soft Defect Root Cause Identification

2007 ◽  
Author(s):  
Peter Egger ◽  
Stefan Müller ◽  
Martin Stiftinger
Keyword(s):  
Integrated Circuits ◽  
Top Down ◽  
Feature Size ◽  
Design Rules ◽  
New Approach ◽  
Root Cause ◽  
Wafer Fab ◽  
Sram Cell ◽  
Tcad Simulation ◽  
Root Cause Identification

Abstract With shrinking feature size of integrated circuits traditional FA techniques like SEM inspection of top down delayered devices or cross sectioning often cannot determine the physical root cause. Inside SRAM blocks the aggressive design rules of transistor parameters can cause a local mismatch and therefore a soft fail of a single SRAM cell. This paper will present a new approach to identify a physical root cause with the help of nano probing and TCAD simulation to allow the wafer fab to implement countermeasures.

scholarly journals Charged particle single nanometre manufacturing

2018 ◽  
Vol 9 ◽  
pp. 2855-2882 ◽  
Author(s):  
Philip D Prewett ◽  
Cornelis W Hagen ◽  
Claudia Lenk ◽  
Steve Lenk ◽  
Marcus Kaestner ◽  
...  
Keyword(s):  
Charged Particle ◽  
High Throughput ◽  
Nanoimprint Lithography ◽  
Ion Beam ◽  
Ambient Air ◽  
Particle Beam ◽  
Vacuum System ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Charged Particle Beam

Following a brief historical summary of the way in which electron beam lithography developed out of the scanning electron microscope, three state-of-the-art charged-particle beam nanopatterning technologies are considered. All three have been the subject of a recently completed European Union Project entitled “Single Nanometre Manufacturing: Beyond CMOS”. Scanning helium ion beam lithography has the advantages of virtually zero proximity effect, nanoscale patterning capability and high sensitivity in combination with a novel fullerene resist based on the sub-nanometre C60 molecule. The shot noise-limited minimum linewidth achieved to date is 6 nm. The second technology, focused electron induced processing (FEBIP), uses a nozzle-dispensed precursor gas either to etch or to deposit patterns on the nanometre scale without the need for resist. The process has potential for high throughput enhancement using multiple electron beams and a system employing up to 196 beams is under development based on a commercial SEM platform. Among its potential applications is the manufacture of templates for nanoimprint lithography, NIL. This is also a target application for the third and final charged particle technology, viz. field emission electron scanning probe lithography, FE-eSPL. This has been developed out of scanning tunneling microscopy using lower-energy electrons (tens of electronvolts rather than the tens of kiloelectronvolts of the other techniques). It has the considerable advantage of being employed without the need for a vacuum system, in ambient air and is capable of sub-10 nm patterning using either developable resists or a self-developing mode applicable for many polymeric resists, which is preferred. Like FEBIP it is potentially capable of massive parallelization for applications requiring high throughput.

Fabrication of metallic SPM tips by combining UV nanoimprint lithography and focused ion beam processing

2010 ◽  
Vol 87 (5-8) ◽  
pp. 1123-1126 ◽  
Author(s):  
J.D. Jambreck ◽  
H. Schmitt ◽  
B. Amon ◽  
M. Rommel ◽  
A.J. Bauer ◽  
...  
Keyword(s):  
Nanoimprint Lithography ◽  
Focused Ion Beam ◽  
Ion Beam
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