Electrical and physical characteristics of metal–oxide–semiconductor structured nonvolatile memory with HfLaxTiyOzcharge trapping layers

2017 ◽  
Vol 35 (2) ◽  
pp. 022203 ◽  
Author(s):  
Jin-Tsong Jeng ◽  
Yan-Lin Li ◽  
Chin-Lung Cheng
Keyword(s):  
Metal Oxide ◽  
Nonvolatile Memory ◽  
Metal Oxide Semiconductor ◽  
Physical Characteristics ◽  
Oxide Semiconductor

Charge retention in metal–oxide–semiconductor capacitors on SiC used as nonvolatile-memory elements

2002 ◽  
Vol 80 (18) ◽  
pp. 3421-3423 ◽  
Author(s):  
Sima Dimitrijev ◽  
Kuan Yew Cheong ◽  
Jisheng Han ◽  
H. Barry Harrison
Keyword(s):  
Metal Oxide ◽  
Nonvolatile Memory ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Charge Retention

GaAs metal-oxide-semiconductor based nonvolatile memory devices embedded with ZnO quantum dots

2013 ◽  
Vol 114 (8) ◽  
pp. 084509 ◽  
Author(s):  
Souvik Kundu ◽  
Sankara Rao Gollu ◽  
Ramakant Sharma ◽  
Nripendra. N Halder ◽  
Pranab Biswas ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Metal Oxide ◽  
Nonvolatile Memory ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Memory Devices ◽  
Nonvolatile Memory Devices ◽  
Zno Quantum Dots

INVESTIGATION OF ZrxLa1-xOy NANOCRYSTALLITES IN METAL–HIGH-k OXIDE–SILICON-TYPE NONVOLATILE MEMORY DEVICES

2012 ◽  
Vol 26 (31) ◽  
pp. 1250191 ◽  
Author(s):  
ALI BAHARI ◽  
REZA GHOLIPUR
Keyword(s):  
Electron Microscopy ◽  
Metal Oxide ◽  
Current Density ◽  
Nonvolatile Memory ◽  
Field Effect Transistors ◽  
Sol Gel ◽  
Dip Coating ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Nonvolatile Memory Devices

To investigate characterization of Zr x La 1-x O y nanocrystallites as a buffer oxide in forming the metal-oxide-semiconductor field effect transistors (MOSFETs) structure, we synthesized Zr x La 1-x O y nanocrystallites by sol–gel method. Moreover, from the solution prepared, thin films on silicon wafer substrates have been realized by "dip-coating" with a pulling out speed of 5 cm min -1. The structure, morphology, electrical properties of thin film was examined by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and transmission electron microscopy (TEM) techniques. Electrical property characterization was performed with metal-oxide-semiconductor (MOS) structures through capacitance–voltage (C–V) and current density–voltage (J–V) measurements. The leakage current density was below 1.0 ×10-6 A/cm 2 at 1 MV/cm.

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