GaAs metal-oxide-semiconductor based nonvolatile memory devices embedded with ZnO quantum dots

2013 ◽  
Vol 114 (8) ◽  
pp. 084509 ◽  
Author(s):  
Souvik Kundu ◽  
Sankara Rao Gollu ◽  
Ramakant Sharma ◽  
Nripendra. N Halder ◽  
Pranab Biswas ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Metal Oxide ◽  
Nonvolatile Memory ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Memory Devices ◽  
Nonvolatile Memory Devices ◽  
Zno Quantum Dots

INVESTIGATION OF ZrxLa1-xOy NANOCRYSTALLITES IN METAL–HIGH-k OXIDE–SILICON-TYPE NONVOLATILE MEMORY DEVICES

2012 ◽  
Vol 26 (31) ◽  
pp. 1250191 ◽  
Author(s):  
ALI BAHARI ◽  
REZA GHOLIPUR
Keyword(s):  
Electron Microscopy ◽  
Metal Oxide ◽  
Current Density ◽  
Nonvolatile Memory ◽  
Field Effect Transistors ◽  
Sol Gel ◽  
Dip Coating ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Nonvolatile Memory Devices

To investigate characterization of Zr x La 1-x O y nanocrystallites as a buffer oxide in forming the metal-oxide-semiconductor field effect transistors (MOSFETs) structure, we synthesized Zr x La 1-x O y nanocrystallites by sol–gel method. Moreover, from the solution prepared, thin films on silicon wafer substrates have been realized by "dip-coating" with a pulling out speed of 5 cm min -1. The structure, morphology, electrical properties of thin film was examined by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and transmission electron microscopy (TEM) techniques. Electrical property characterization was performed with metal-oxide-semiconductor (MOS) structures through capacitance–voltage (C–V) and current density–voltage (J–V) measurements. The leakage current density was below 1.0 ×10-6 A/cm 2 at 1 MV/cm.

Charge storage properties of InP quantum dots in GaAs metal-oxide-semiconductor based nonvolatile flash memory devices

2012 ◽  
Vol 101 (21) ◽  
pp. 212108 ◽  
Author(s):  
Souvik Kundu ◽  
Nripendra N. Halder ◽  
Pranab Biswas ◽  
D. Biswas ◽  
P. Banerji ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Metal Oxide ◽  
Flash Memory ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Charge Storage ◽  
Memory Devices ◽  
Storage Properties ◽  
Inp Quantum Dots

Nonvolatile Memory Devices with NiSi2/CoSi2 Nanocrystals

2007 ◽  
Vol 7 (1) ◽  
pp. 339-343 ◽  
Author(s):  
P. H. Yeh ◽  
L. J. Chen ◽  
P. T. Liu ◽  
D. Y. Wang ◽  
T. C. Chang
Keyword(s):  
Metal Oxide ◽  
Nonvolatile Memory ◽  
Semiconductor Industry ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures ◽  
Retention Characteristic ◽  
Capacitance Voltage ◽  
Nonvolatile Memory Devices ◽  
Voltage Hysteresis

Metal-oxide-semiconductor structures with NiSi2 and CoSi2 nanocrystals embedded in the SiO2 layer have been fabricated. A pronounced capacitance–voltage hysteresis was observed with a memory window about 1 V under low programming voltage. The retention characteristic can be improved by using HfO2 layer as control oxide. The processing of the structure is compatible with the current manufacturing technology of semiconductor industry.

Light-Induced Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in Metal–Oxide–Semiconductor Structures

2010 ◽  
Vol 49 (4) ◽  
pp. 04DJ04 ◽  
Author(s):  
Naoya Morisawa ◽  
Mitsuhisa Ikeda ◽  
Sho Nakanishi ◽  
Akira Kawanami ◽  
Katsunori Makihara ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Floating Gate ◽  
Oxide Semiconductor ◽  
Carrier Transfer ◽  
Semiconductor Structures ◽  
Si Quantum Dots
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