Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma

2017 ◽  
Vol 35 (1) ◽  
pp. 01B130 ◽  
Author(s):  
Akhil Sharma ◽  
Valentino Longo ◽  
Marcel A. Verheijen ◽  
Ageeth A. Bol ◽  
W. M. M. (Erwin) Kessels
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
O2 Plasma

scholarly journals Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Coatings ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 692
Author(s):  
Jong Hyeon Won ◽  
Seong Ho Han ◽  
Bo Keun Park ◽  
Taek-Mo Chung ◽  
Jeong Hwan Han
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Carrier Concentration ◽  
High Mobility ◽  
Impurity Scattering ◽  
Atomic Layer ◽  
Growth Behavior ◽  
Layer Deposition ◽  
Growth Feature ◽  
O2 Plasma

Herein, we performed a comparative study of plasma-enhanced atomic layer deposition (PEALD) of SnO2 films using Sn(dmamp)2 as the Sn source and either H2O plasma or O2 plasma as the oxygen source in a wide temperature range of 100–300 °C. Since the type of oxygen source employed in PEALD determines the growth behavior and resultant film properties, we investigated the growth feature of both SnO2 PEALD processes and the various chemical, structural, morphological, optical, and electrical properties of SnO2 films, depending on the oxygen source. SnO2 films from Sn(dmamp)2/H2O plasma (SH-SnO2) and Sn(dmamp)2/O2 plasma (SO-SnO2) showed self-limiting atomic layer deposition (ALD) growth behavior with growth rates of ~0.21 and 0.07–0.13 nm/cycle, respectively. SO-SnO2 films showed relatively larger grain structures than SH-SnO2 films at all temperatures. Interestingly, SH-SnO2 films grown at high temperatures of 250 and 300 °C presented porous rod-shaped surface morphology. SO-SnO2 films showed good electrical properties, such as high mobility up to 27 cm2 V−1·s−1 and high carrier concentration of ~1019 cm−3, whereas SH-SnO2 films exhibited poor Hall mobility of 0.3–1.4 cm2 V−1·s−1 and moderate carrier concentration of 1 × 1017–30 × 1017 cm−3. This may be attributed to the significant grain boundary and hydrogen impurity scattering.

Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma

2011 ◽  
Vol 29 (2) ◽  
pp. 021016 ◽  
Author(s):  
N. Leick ◽  
R. O. F. Verkuijlen ◽  
L. Lamagna ◽  
E. Langereis ◽  
S. Rushworth ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
O2 Plasma

scholarly journals Atomic layer deposition of stoichiometric In2O3 films using liquid ethylcyclopentadienyl indium and combinations of H2O and O2 plasma

AIP Advances ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 045019 ◽  
Author(s):  
Fumikazu Mizutani ◽  
Shintaro Higashi ◽  
Mari Inoue ◽  
Toshihide Nabatame
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
O2 Plasma

Study of the oxidation at the Al2O3/GaSb interface after NH4OH and HCl/(NH4)2S passivations and O2 plasma post atomic layer deposition process

2018 ◽  
Vol 124 (17) ◽  
pp. 175302 ◽  
Author(s):  
Y. Lechaux ◽  
A. B. Fadjie-Djomkam ◽  
M. Pastorek ◽  
X. Wallart ◽  
S. Bollaert ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Deposition Process ◽  
Atomic Layer Deposition Process ◽  
Layer Deposition ◽  
O2 Plasma

Self-catalysis by aminosilanes and strong surface oxidation by O2 plasma in plasma-enhanced atomic layer deposition of high-quality SiO2

2015 ◽  
Vol 51 (7) ◽  
pp. 1341-1344 ◽  
Author(s):  
Guo-Yong Fang ◽  
Li-Na Xu ◽  
Yan-Qiang Cao ◽  
Lai-Guo Wang ◽  
Di Wu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Surface Oxidation ◽  
Atomic Layer ◽  
High Quality ◽  
Layer Deposition ◽  
Strong Surface ◽  
O2 Plasma

In SiO2 PE-ALD, aminosilanes can self-catalyze Si–O formation and 1O2, 1O, and 3O can strongly oxidize surface –SiH to –SiOH.

scholarly journals Effect of O2 plasma exposure time during atomic layer deposition of amorphous gallium oxide

2021 ◽  
Vol 39 (5) ◽  
pp. 052408
Author(s):  
Hanno Kröncke ◽  
Florian Maudet ◽  
Sourish Banerjee ◽  
Jürgen Albert ◽  
Sven Wiesner ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Exposure Time ◽  
Gallium Oxide ◽  
Atomic Layer ◽  
Plasma Exposure ◽  
Layer Deposition ◽  
Plasma Exposure Time ◽  
O2 Plasma
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