Atomic layer deposition of high purity Ga2O3 films using liquid pentamethylcyclopentadienyl gallium and combinations of H2O and O2 plasma

2020 ◽  
Vol 38 (2) ◽  
pp. 022412 ◽  
Author(s):  
Fumikazu Mizutani ◽  
Shintaro Higashi ◽  
Mari Inoue ◽  
Toshihide Nabatame
Keyword(s):  
Atomic Layer Deposition ◽  
High Purity ◽  
Atomic Layer ◽  
Layer Deposition ◽  
O2 Plasma

scholarly journals Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Coatings ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 692
Author(s):  
Jong Hyeon Won ◽  
Seong Ho Han ◽  
Bo Keun Park ◽  
Taek-Mo Chung ◽  
Jeong Hwan Han
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Carrier Concentration ◽  
High Mobility ◽  
Impurity Scattering ◽  
Atomic Layer ◽  
Growth Behavior ◽  
Layer Deposition ◽  
Growth Feature ◽  
O2 Plasma

Herein, we performed a comparative study of plasma-enhanced atomic layer deposition (PEALD) of SnO2 films using Sn(dmamp)2 as the Sn source and either H2O plasma or O2 plasma as the oxygen source in a wide temperature range of 100–300 °C. Since the type of oxygen source employed in PEALD determines the growth behavior and resultant film properties, we investigated the growth feature of both SnO2 PEALD processes and the various chemical, structural, morphological, optical, and electrical properties of SnO2 films, depending on the oxygen source. SnO2 films from Sn(dmamp)2/H2O plasma (SH-SnO2) and Sn(dmamp)2/O2 plasma (SO-SnO2) showed self-limiting atomic layer deposition (ALD) growth behavior with growth rates of ~0.21 and 0.07–0.13 nm/cycle, respectively. SO-SnO2 films showed relatively larger grain structures than SH-SnO2 films at all temperatures. Interestingly, SH-SnO2 films grown at high temperatures of 250 and 300 °C presented porous rod-shaped surface morphology. SO-SnO2 films showed good electrical properties, such as high mobility up to 27 cm2 V−1·s−1 and high carrier concentration of ~1019 cm−3, whereas SH-SnO2 films exhibited poor Hall mobility of 0.3–1.4 cm2 V−1·s−1 and moderate carrier concentration of 1 × 1017–30 × 1017 cm−3. This may be attributed to the significant grain boundary and hydrogen impurity scattering.

Polycrystalline and high purity SnO2 films by plasma-enhanced atomic layer deposition using H2O plasma at very low temperatures of 60–90 °C

Vacuum ◽  
2021 ◽  
pp. 110739
Author(s):  
Jong Hyeon Won ◽  
Heenang Choi ◽  
Seong Ho Han ◽  
Bo Keun Park ◽  
Taek-Mo Chung ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
High Purity ◽  
Low Temperatures ◽  
Atomic Layer ◽  
Layer Deposition

Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma

2011 ◽  
Vol 29 (2) ◽  
pp. 021016 ◽  
Author(s):  
N. Leick ◽  
R. O. F. Verkuijlen ◽  
L. Lamagna ◽  
E. Langereis ◽  
S. Rushworth ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
O2 Plasma

scholarly journals Atomic layer deposition of stoichiometric In2O3 films using liquid ethylcyclopentadienyl indium and combinations of H2O and O2 plasma

AIP Advances ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 045019 ◽  
Author(s):  
Fumikazu Mizutani ◽  
Shintaro Higashi ◽  
Mari Inoue ◽  
Toshihide Nabatame
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
O2 Plasma

Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma

2017 ◽  
Vol 35 (1) ◽  
pp. 01B130 ◽  
Author(s):  
Akhil Sharma ◽  
Valentino Longo ◽  
Marcel A. Verheijen ◽  
Ageeth A. Bol ◽  
W. M. M. (Erwin) Kessels
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
O2 Plasma
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