Self-catalysis by aminosilanes and strong surface oxidation by O2 plasma in plasma-enhanced atomic layer deposition of high-quality SiO2

2015 ◽  
Vol 51 (7) ◽  
pp. 1341-1344 ◽  
Author(s):  
Guo-Yong Fang ◽  
Li-Na Xu ◽  
Yan-Qiang Cao ◽  
Lai-Guo Wang ◽  
Di Wu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Surface Oxidation ◽  
Atomic Layer ◽  
High Quality ◽  
Layer Deposition ◽  
Strong Surface ◽  
O2 Plasma

In SiO2 PE-ALD, aminosilanes can self-catalyze Si–O formation and 1O2, 1O, and 3O can strongly oxidize surface –SiH to –SiOH.

scholarly journals Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Coatings ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 692
Author(s):  
Jong Hyeon Won ◽  
Seong Ho Han ◽  
Bo Keun Park ◽  
Taek-Mo Chung ◽  
Jeong Hwan Han
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Carrier Concentration ◽  
High Mobility ◽  
Impurity Scattering ◽  
Atomic Layer ◽  
Growth Behavior ◽  
Layer Deposition ◽  
Growth Feature ◽  
O2 Plasma

Herein, we performed a comparative study of plasma-enhanced atomic layer deposition (PEALD) of SnO2 films using Sn(dmamp)2 as the Sn source and either H2O plasma or O2 plasma as the oxygen source in a wide temperature range of 100–300 °C. Since the type of oxygen source employed in PEALD determines the growth behavior and resultant film properties, we investigated the growth feature of both SnO2 PEALD processes and the various chemical, structural, morphological, optical, and electrical properties of SnO2 films, depending on the oxygen source. SnO2 films from Sn(dmamp)2/H2O plasma (SH-SnO2) and Sn(dmamp)2/O2 plasma (SO-SnO2) showed self-limiting atomic layer deposition (ALD) growth behavior with growth rates of ~0.21 and 0.07–0.13 nm/cycle, respectively. SO-SnO2 films showed relatively larger grain structures than SH-SnO2 films at all temperatures. Interestingly, SH-SnO2 films grown at high temperatures of 250 and 300 °C presented porous rod-shaped surface morphology. SO-SnO2 films showed good electrical properties, such as high mobility up to 27 cm2 V−1·s−1 and high carrier concentration of ~1019 cm−3, whereas SH-SnO2 films exhibited poor Hall mobility of 0.3–1.4 cm2 V−1·s−1 and moderate carrier concentration of 1 × 1017–30 × 1017 cm−3. This may be attributed to the significant grain boundary and hydrogen impurity scattering.

Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma

2011 ◽  
Vol 29 (2) ◽  
pp. 021016 ◽  
Author(s):  
N. Leick ◽  
R. O. F. Verkuijlen ◽  
L. Lamagna ◽  
E. Langereis ◽  
S. Rushworth ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
O2 Plasma

scholarly journals Direct Epitaxial Nanometer-Thin InN of High Structural Quality on 4H-SiC by Atomic Layer Deposition

2020 ◽  
Author(s):  
Chih-Wei Hsu ◽  
Petro Deminskyi ◽  
Ivan Martinovic ◽  
Ivan G. Ivanov ◽  
Justinas Palisaitis ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Indium Nitride ◽  
Atomic Layer ◽  
Structural Quality ◽  
High Electron ◽  
X Ray Diffraction ◽  
High Quality ◽  
Subsequent Formation ◽  
Transmission Electron ◽  
Layer Deposition

<div>Indium nitride (InN) is a highly promising material for high frequency electronics given its</div><div>low band gap and high electron mobility. The development of InN-based devices is hampered</div><div>by the limitations in depositing very thin InN films of high quality. We demonstrate growth of</div><div>high-structural-quality nanometer thin InN films on 4H-SiC by atomic layer deposition (ALD).</div><div>High resolution X-ray diffraction and transmission electron microscopy show epitaxial growth</div><div>and an atomically sharp interface between InN and 4H-SiC. The InN film is fully relaxed already after a few atomic layers and shows a very smooth morphology where the low surface</div><div>roughness (0.14 nm) is found to reproduced sub-nanometer surface features of the substrate. Raman measurements show an asymmetric broadening caused by grains in the InN film. Our results show the potential of ALD to prepare high quality nanometer-thin InN films for subsequent formation of heterojunctions.</div>

High-quality slot waveguide ring resonator based on atomic layer deposition

2015 ◽  
Author(s):  
A. Autere ◽  
L. Karvonen ◽  
A. Säynätjoki ◽  
M. Roussey ◽  
E. Färm ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Ring Resonator ◽  
Atomic Layer ◽  
Slot Waveguide ◽  
High Quality ◽  
Layer Deposition ◽  
Waveguide Ring

Epitaxy of High-Quality Single-Crystal Hexagonal Perovskite YAlO3 on GaAs(111)A Using Laminated Atomic Layer Deposition

2019 ◽  
Vol 19 (4) ◽  
pp. 2030-2036 ◽  
Author(s):  
Lawrence Boyu Young ◽  
Chao-Kai Cheng ◽  
Keng-Yung Lin ◽  
Yen-Hsun Lin ◽  
Hsien-Wen Wan ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Single Crystal ◽  
Atomic Layer ◽  
High Quality ◽  
High Quality Single Crystal ◽  
Layer Deposition
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