Practical approach to modeling e-beam lithographic process from SEM images for minimization of line edge roughness and critical dimension error

2016 ◽  
Vol 34 (1) ◽  
pp. 011601 ◽  
Author(s):  
Rui Guo ◽  
Soo-Young Lee ◽  
Jin Choi ◽  
Sung-Hoon Park ◽  
In-Kyun Shin ◽  
...  
Keyword(s):  
Critical Dimension ◽  
Practical Approach ◽  
Line Edge Roughness ◽  
Sem Images ◽  
Edge Roughness

scholarly journals Resist-Free Directed Self-Assembly Chemo-Epitaxy Approach for Line/Space Patterning

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2443
Author(s):  
Tommaso Giammaria ◽  
Ahmed Gharbi ◽  
Anne Paquet ◽  
Paul Nealey ◽  
Raluca Tiron
Keyword(s):  
Self Assembly ◽  
Silicon Oxide ◽  
Good Control ◽  
Critical Dimension ◽  
Semiconductor Technology ◽  
Line Edge Roughness ◽  
Neutral Layer ◽  
Edge Roughness ◽  
Chemical Pattern ◽  
Line Space

This work reports a novel, simple, and resist-free chemo-epitaxy process permitting the directed self-assembly (DSA) of lamella polystyrene-block-polymethylmethacrylate (PS-b-PMMA) block copolymers (BCPs) on a 300 mm wafer. 193i lithography is used to manufacture topographical guiding silicon oxide line/space patterns. The critical dimension (CD) of the silicon oxide line obtained can be easily trimmed by means of wet or dry etching: it allows a good control of the CD that permits finely tuning the guideline and the background dimensions. The chemical pattern that permits the DSA of the BCP is formed by a polystyrene (PS) guide and brush layers obtained with the grafting of the neutral layer polystyrene-random-polymethylmethacrylate (PS-r-PMMA). Moreover, data regarding the line edge roughness (LER) and line width roughness (LWR) are discussed with reference to the literature and to the stringent requirements of semiconductor technology.

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