Estimation of critical dimension and line edge roughness using a neural network

2021 ◽  
Vol 39 (3) ◽  
pp. 032602
Author(s):  
Dehua Li ◽  
Soo-Young Lee ◽  
Jin Choi ◽  
Seom-Beom Kim ◽  
Chan-Uk Jeon
Keyword(s):  
Neural Network ◽  
Critical Dimension ◽  
Line Edge Roughness ◽  
Edge Roughness

scholarly journals Resist-Free Directed Self-Assembly Chemo-Epitaxy Approach for Line/Space Patterning

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2443
Author(s):  
Tommaso Giammaria ◽  
Ahmed Gharbi ◽  
Anne Paquet ◽  
Paul Nealey ◽  
Raluca Tiron
Keyword(s):  
Self Assembly ◽  
Silicon Oxide ◽  
Good Control ◽  
Critical Dimension ◽  
Semiconductor Technology ◽  
Line Edge Roughness ◽  
Neutral Layer ◽  
Edge Roughness ◽  
Chemical Pattern ◽  
Line Space

This work reports a novel, simple, and resist-free chemo-epitaxy process permitting the directed self-assembly (DSA) of lamella polystyrene-block-polymethylmethacrylate (PS-b-PMMA) block copolymers (BCPs) on a 300 mm wafer. 193i lithography is used to manufacture topographical guiding silicon oxide line/space patterns. The critical dimension (CD) of the silicon oxide line obtained can be easily trimmed by means of wet or dry etching: it allows a good control of the CD that permits finely tuning the guideline and the background dimensions. The chemical pattern that permits the DSA of the BCP is formed by a polystyrene (PS) guide and brush layers obtained with the grafting of the neutral layer polystyrene-random-polymethylmethacrylate (PS-r-PMMA). Moreover, data regarding the line edge roughness (LER) and line width roughness (LWR) are discussed with reference to the literature and to the stringent requirements of semiconductor technology.

scholarly journals True 3D Nanometrology: 3D-Probing with a Cantilever-Based Sensor

Sensors ◽  
2021 ◽  
Vol 22 (1) ◽  
pp. 314
Author(s):  
Jan Thiesler ◽  
Thomas Ahbe ◽  
Rainer Tutsch ◽  
Gaoliang Dai
Keyword(s):  
Three Dimensional ◽  
Critical Dimension ◽  
Selectivity Ratio ◽  
Line Edge Roughness ◽  
Long Term Stability ◽  
Atomic Force ◽  
Edge Roughness ◽  
Spatial Dimensions ◽  
Optical Lever

State of the art three-dimensional atomic force microscopes (3D-AFM) cannot measure three spatial dimensions separately from each other. A 3D-AFM-head with true 3D-probing capabilities is presented in this paper. It detects the so-called 3D-Nanoprobes CD-tip displacement with a differential interferometer and an optical lever. The 3D-Nanoprobe was specifically developed for tactile 3D-probing and is applied for critical dimension (CD) measurements. A calibrated 3D-Nanoprobe shows a selectivity ratio of 50:1 on average for each of the spatial directions x, y, and z. Typical stiffness values are kx = 1.722 ± 0.083 N/m, ky = 1.511 ± 0.034 N/m, and kz = 1.64 ± 0.16 N/m resulting in a quasi-isotropic ratio of the stiffness of 1.1:0.9:1.0 in x:y:z, respectively. The probing repeatability of the developed true 3D-AFM shows a standard deviation of 0.18 nm, 0.31 nm, and 0.83 nm for x, y, and z, respectively. Two CD-line samples type IVPS100-PTB, which were perpendicularly mounted to each other, were used to test the performance of the developed true 3D-AFM: repeatability, long-term stability, pitch, and line edge roughness and linewidth roughness (LER/LWR), showing promising results.

scholarly journals Quantitative analysis and modeling of line edge roughness in near-field lithography: toward high pattern quality in nanofabrication

Nanophotonics ◽  
2019 ◽  
Vol 8 (5) ◽  
pp. 879-888 ◽  
Author(s):  
Dandan Han ◽  
Changhoon Park ◽  
Seonghyeon Oh ◽  
Howon Jung ◽  
Jae W. Hahn
Keyword(s):  
Quantitative Analysis ◽  
Surface Plasmon ◽  
Near Field ◽  
Critical Dimension ◽  
Aerial Image ◽  
Line Edge Roughness ◽  
Lateral Direction ◽  
Spherical Waves ◽  
Material Chemistry ◽  
Edge Roughness

AbstractQuantitative analysis of line edge roughness (LER) is very important for understanding the root causes of LER and thereby improving the pattern quality in near-field lithography (NFL), because LER has become the main limiter of critical dimension (CD) control as the feature size of nanostructures is scaled down. To address this challenge, the photoresist point-spread function of NFL with a contact plasmonic ridge nanoaperture can be employed to account for the physical and chemical effects involved in the LER-generation mechanism. Our theoretical and experimental results show that the sources of LER in NFL mainly come from the aerial image, material chemistry, and process. Importantly, the complicated decay characteristics of surface plasmon waves are demonstrated to be the main optical contributor. Because the evanescent mode of surface plasmon polaritons (SPPs) and quasi-spherical waves (QSWs) decay in the lateral direction, they can induce a small image log-slope and low photoresist contrast, leading to a large LER. We introduce an analytical model and demonstrate the relationship between LER and CD to estimate the pattern quality in NFL. We expect that these results can provide alternative approaches to further improve pattern uniformity and resolution, which can lead to advanced nanopatterning results in NFL.

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