scholarly journals Negative gate-bias instability of ZnO thin-film transistors studied by current–voltage and capacitance–voltage analyses

2014 ◽  
Vol 32 (6) ◽  
pp. 061208 ◽  
Author(s):  
Yurong Liu ◽  
Shufeng Mo ◽  
Ruohe Yao ◽  
Pui To Lai
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Zno Thin Film ◽  
Gate Bias ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Bias Instability

The influence of visible light on the gate bias instability of In–Ga–Zn–O thin film transistors

2011 ◽  
Vol 62 (1) ◽  
pp. 77-81 ◽  
Author(s):  
Sangwook Kim ◽  
Sunil Kim ◽  
Changjung Kim ◽  
JaeChul Park ◽  
Ihun Song ◽  
...  
Keyword(s):  
Thin Film ◽  
Visible Light ◽  
Thin Film Transistors ◽  
Gate Bias ◽  
Bias Instability

Gate bias instability of hydrogenated amorphous SiGe thin-film transistors

2013 ◽  
Vol 62 (8) ◽  
pp. 1183-1187 ◽  
Author(s):  
Ho Sik Jeon ◽  
Yang Wook Heo ◽  
Byung Seong Bae ◽  
Sang Youn Han ◽  
Junho Song
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Bias ◽  
Bias Instability ◽  
Hydrogenated Amorphous

scholarly journals Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses

2018 ◽  
Vol 9 ◽  
pp. 2573-2580 ◽  
Author(s):  
Dapeng Wang ◽  
Mamoru Furuta
Keyword(s):  
Thin Film ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Debye Length ◽  
Pulse Mode ◽  
Gate Insulator ◽  
Negative Bias ◽  
Current Voltage ◽  
Bias Instability ◽  
Amorphous Ingazno

The photoleakage current and the negative bias and illumination stress (NBIS)-induced instability in amorphous InGaZnO thin-film transistors (a-IGZO TFTs) with various active layer thicknesses (T IGZO) were investigated. The photoleakage current was found to gradually increase in a-IGZO TFTs irrespective of the T IGZO when the photon energy of visible light irradiation exceeded ≈2.7 eV. Furthermore, the influence of the T IGZO on NBIS-induced instability in a-IGZO TFTs was explored by the combination of current–voltage measurements in double-sweeping V GS mode and capacitance–voltage measurements. The NBIS-induced hysteresis was quantitatively analyzed using a positive gate pulse mode. When the T IGZO was close to the Debye length, the trapped electrons at the etch-stopper/IGZO interface, the trapped holes at the IGZO/gate insulator interface, and the generation of donor-like states in an a-IGZO layer were especially prominent during NBIS.

Effects of gate-bias stress on ZnO thin-film transistors

2010 ◽  
Vol 18 (10) ◽  
pp. 802 ◽  
Author(s):  
Liang-Yu Su ◽  
Hsin-Ying Lin ◽  
Sung-Li Wang ◽  
Yung-Hui Yeh ◽  
Chun-Cheng Cheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Zno Thin Film ◽  
Gate Bias ◽  
Bias Stress ◽  
Gate Bias Stress

scholarly journals Effects of chemical stoichiometry of channel region on bias instability in ZnO thin-film transistors

2011 ◽  
Vol 98 (10) ◽  
pp. 103512 ◽  
Author(s):  
Yudai Kamada ◽  
Shizuo Fujita ◽  
Mutsumi Kimura ◽  
Takahiro Hiramatsu ◽  
Tokiyoshi Matsuda ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Zno Thin Film ◽  
Bias Instability ◽  
Channel Region ◽  
Chemical Stoichiometry
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