Gate bias instability in hydrogenated polycrystalline silicon thin-film transistors

2000 ◽  
Vol 88 (6) ◽  
pp. 3624-3628 ◽  
Author(s):  
C. A. Dimitriadis
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Gate Bias ◽  
Silicon Thin Film ◽  
Bias Instability

Degradation behavior and degradation mechanism of bridged-grain polycrystalline silicon thin film transistors under AC gate bias stress

2017 ◽  
Vol 32 (2) ◽  
pp. 91-96
Author(s):  
张猛 ZHANG Meng ◽  
夏之荷 XIA Zhi-he ◽  
周玮 ZHOU Wei ◽  
陈荣盛 CHEN Rong-sheng ◽  
王文 WONG Man ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Degradation Mechanism ◽  
Gate Bias ◽  
Degradation Behavior ◽  
Silicon Thin Film ◽  
Bias Stress ◽  
Gate Bias Stress

Anomalous on-current and subthreshold swing improvement in low-temperature polycrystalline-silicon thin-film transistors under Gate bias stress

2011 ◽  
Vol 98 (12) ◽  
pp. 122101 ◽  
Author(s):  
Chia-Sheng Lin ◽  
Ying-Chung Chen ◽  
Ting-Chang Chang ◽  
Fu-Yen Jian ◽  
Hung-Wei Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Subthreshold Swing ◽  
Gate Bias ◽  
Silicon Thin Film ◽  
Bias Stress ◽  
Gate Bias Stress

Dielectric Effects in Laser-Crystallised Polycrystalline Silicon Thin Film Transistors

1995 ◽  
Vol 377 ◽  
Author(s):  
G. H. Masterton ◽  
R. A. G. Gibson ◽  
M. Hack
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Gate Dielectric ◽  
Drain Current ◽  
Generation Process ◽  
Gate Bias ◽  
Silicon Thin Film ◽  
Transient Behaviour ◽  
Current Decay

ABSTRACTWe present experimental results on the transient response of the source-drain current of laser crystallised polycrystalline silicon (poly-Si) thin film transistors (TFTs) over many orders of magnitude in time after the application of a voltage pulse to the gate electrode. This work follows on from similar measurements performed on amorphous silicon (a-Si) TFTs. Results showed a definite change in transient behaviour dependent on the magnitude of the gate bias. At a gate voltage of 5V there was an initial decay then a marked increase in the source-drain current beyond 1000 seconds. This variation of transient behaviour with gate bias was not seen in the a-Si case. For poly-Si the transient behaviour could not be split into different regimes in time (beyond the carrier transit time) whereas for a-Si TFTs the source-drain current showed a logarithmic decay at room temperature up to 100 seconds followed by a power law decay beyond 100 seconds. Our results indicate perhaps that only one mechanism exists for the observed transient decay of current, unlike the a-Si case. Measurements carried out at elevated temperature showed the current decay was independent of temperature indicating that the transient decay may be caused by charge injection via a tunnelling process into interface states, gate dielectric or passivation dielectric. Finally by carrying out measurements on TFTs after moderate positive voltage stressing and on TFTs with specially fabricated gate and passivation dielectrics it has been established that the transient decay is dielectric related and not a defect generation process.

Dynamic Bias Instability of p-Channel Polycrystalline-Silicon Thin-Film Transistors Induced by Impact Ionization

2009 ◽  
Vol 30 (4) ◽  
pp. 368-370 ◽  
Author(s):  
Ching-Fang Huang ◽  
Hung-Chang Sun ◽  
Ying-Jhe Yang ◽  
Yen-Ting Chen ◽  
Chun-Yuan Ku ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Impact Ionization ◽  
Silicon Thin Film ◽  
Bias Instability ◽  
Dynamic Bias
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