Effects of gate-bias stress on ZnO thin-film transistors

2010 ◽  
Vol 18 (10) ◽  
pp. 802 ◽  
Author(s):  
Liang-Yu Su ◽  
Hsin-Ying Lin ◽  
Sung-Li Wang ◽  
Yung-Hui Yeh ◽  
Chun-Cheng Cheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Zno Thin Film ◽  
Gate Bias ◽  
Bias Stress ◽  
Gate Bias Stress

Investigation of the Gate Bias Stress Instability in ZnO Thin Film Transistors by Low-Frequency Noise Analysis

2013 ◽  
Vol 52 (4S) ◽  
pp. 04CF04 ◽  
Author(s):  
Kwang-Seok Jeong ◽  
Ho-Jin Yun ◽  
Yu-Mi Kim ◽  
Seung-Dong Yang ◽  
Sang-Youl Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Noise Analysis ◽  
Low Frequency ◽  
Frequency Noise ◽  
Zno Thin Film ◽  
Gate Bias ◽  
Low Frequency Noise ◽  
Bias Stress ◽  
Gate Bias Stress

Degradation behavior and degradation mechanism of bridged-grain polycrystalline silicon thin film transistors under AC gate bias stress

2017 ◽  
Vol 32 (2) ◽  
pp. 91-96
Author(s):  
张猛 ZHANG Meng ◽  
夏之荷 XIA Zhi-he ◽  
周玮 ZHOU Wei ◽  
陈荣盛 CHEN Rong-sheng ◽  
王文 WONG Man ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Degradation Mechanism ◽  
Gate Bias ◽  
Degradation Behavior ◽  
Silicon Thin Film ◽  
Bias Stress ◽  
Gate Bias Stress

scholarly journals Influence of Passivation Layers on Positive Gate Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors

Micromachines ◽  
2018 ◽  
Vol 9 (11) ◽  
pp. 603 ◽  
Author(s):  
Yan Zhou ◽  
Chengyuan Dong
Keyword(s):  
Thin Film ◽  
Layer Thickness ◽  
Thin Film Transistors ◽  
Characteristic Length ◽  
Ambient Atmosphere ◽  
Gate Bias ◽  
Threshold Voltage Shift ◽  
Bias Stress ◽  
Amorphous Ingazno ◽  
Gate Bias Stress

Passivation (PV) layers could effectively improve the positive gate bias-stress (PGBS) stability of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs), whereas the related physical mechanism remains unclear. In this study, SiO2 or Al2O3 films with different thicknesses were used to passivate the a-IGZO TFTs, making the devices more stable during PGBS tests. With the increase in PV layer thickness, the PGBS stability of a-IGZO TFTs improved due to the stronger barrier effect of the PV layers. When the PV layer thickness was larger than the characteristic length, nearly no threshold voltage shift occurred, indicating that the ambient atmosphere effect rather than the charge trapping dominated the PGBS instability of a-IGZO TFTs in this study. The SiO2 PV layers showed a better improvement effect than the Al2O3 because the former had a smaller characteristic length (~5 nm) than that of the Al2O3 PV layers (~10 nm).

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