The influence of visible light on the gate bias instability of In–Ga–Zn–O thin film transistors

2011 ◽  
Vol 62 (1) ◽  
pp. 77-81 ◽  
Author(s):  
Sangwook Kim ◽  
Sunil Kim ◽  
Changjung Kim ◽  
JaeChul Park ◽  
Ihun Song ◽  
...  
Keyword(s):  
Thin Film ◽  
Visible Light ◽  
Thin Film Transistors ◽  
Gate Bias ◽  
Bias Instability

Gate bias instability of hydrogenated amorphous SiGe thin-film transistors

2013 ◽  
Vol 62 (8) ◽  
pp. 1183-1187 ◽  
Author(s):  
Ho Sik Jeon ◽  
Yang Wook Heo ◽  
Byung Seong Bae ◽  
Sang Youn Han ◽  
Junho Song
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Bias ◽  
Bias Instability ◽  
Hydrogenated Amorphous

Positive gate bias instability alleviated by self-passivation effect in amorphous InGaZnO thin-film transistors

2015 ◽  
Vol 48 (47) ◽  
pp. 475107 ◽  
Author(s):  
GongTan Li ◽  
Bo-Ru Yang ◽  
Chuan Liu ◽  
Chia-Yu Lee ◽  
Chih-Yuan Tseng ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Bias ◽  
Bias Instability ◽  
Amorphous Ingazno

The Effect of Passivation Layers on the Negative Bias Instability of Ga–In–Zn–O Thin Film Transistors under Illumination

2010 ◽  
Vol 13 (11) ◽  
pp. H376 ◽  
Author(s):  
Ji Sim Jung ◽  
Kwang-Hee Lee ◽  
Kyoung Seok Son ◽  
Joon Seok Park ◽  
Tae Sang Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Negative Bias ◽  
Passivation Layers ◽  
Bias Instability

Role of in-situ hydrogen plasma treatment on gate bias stability and performance of a-IGZO thin-film transistors

2021 ◽  
Author(s):  
Om Kumar Prasad ◽  
Srikant Kumar Mohanty ◽  
ChienHung Wu ◽  
Tsung Ying Yu ◽  
K-M Chang
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
Thin Film Transistors ◽  
Hydrogen Plasma ◽  
Gate Bias ◽  
Bias Stability ◽  
And Performance

Mechanisms for Defect Creation and Removal in Hydrogenated and Deuterated Amorphous Silicon Studied using Thin Film Transistors

2006 ◽  
Vol 910 ◽  
Author(s):  
Andew Flewitt ◽  
Shufan Lin ◽  
William I Milne ◽  
Ralf B Wehrspohn ◽  
Martin J Powell
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Elevated Temperatures ◽  
Chemical Vapour ◽  
Rf Plasma ◽  
Gate Bias ◽  
Removal Process ◽  
Defect Creation

AbstractIt has been widely observed that thin film transistors (TFTs) incorporating an hydrogenated amorphous silicon (a-Si:H) channel exhibit a progressive shift in their threshold voltage with time upon application of a gate bias. This is attributed to the creation of metastable defects in the a-Si:H which can be removed by annealing the device at elevated temperatures with no bias applied to the gate, causing the threshold voltage to return to its original value. In this work, the defect creation and removal process has been investigated using both fully hydrogenated and fully deuterated amorphous silicon (a-Si:D) TFTs. In both cases, material was deposited by rf plasma enhanced chemical vapour deposition over a range of gas pressures to cover the a-g transition. The variation in threshold voltage as a function of gate bias stressing time, and annealing time with no gate bias, was measured. Using the thermalisation energy concept, it has been possible to quantitatively determine the distribution of energies required for defect creation and removal as well as the associated attempt-to-escape frequencies. The defect creation and removal process in a-Si:H is then discussed in the light of these results.

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