Subcritical Delamination of Dielectric and Metal Films from Low-k Organosilicate Glass (OSG) Thin Films in Buffered pH Solutions

2003 ◽  
Vol 795 ◽  
Author(s):  
Y. Lin ◽  
J. J. Vlassak ◽  
T. Y. Tsui ◽  
A. J. McKerrow
Keyword(s):  
Thin Films ◽  
Ph Value ◽  
Dielectric Materials ◽  
Barrier Films ◽  
Interface Delamination ◽  
Organosilicate Glass ◽  
Controlled Fracture ◽  
Ph Buffer ◽  
Subcritical Fracture ◽  
Low K

ABSTRACTUnderstanding subcritical fracture of low-k dielectric materials and barrier thin films in buffered solutions of different pH value is of both technical and scientific importance. Subcritical delamination of dielectric and metal barrier films from low-k organosilicate glass (OSG) films in pH buffer solutions was studied in this work. Crack path and subcritical fracture behavior of OSG depends on the choice of barrier layers. For the OSG/TaN system, fracture takes place in the OSG layer near the interface, while in OSG/SiNx system, delamination occurs at the interface. Delamination behavior of both systems is well described by a hyperbolic sine model that had been developed previously based on a chemical reaction controlled fracture process at the crack tip. The threshold toughness of both systems decreases linearly with increasing pH value. The slopes of the reaction-controlled regime of the crack velocity curves for both systems are independent of pH as predicted by the model. Near transport-controlled regime behavior was observed in OSG/TaN system.

Studies of the Coefficient of Thermal Expansion of Low-k ILD Materials by X-Ray Reflectivity

2006 ◽  
Vol 914 ◽  
Author(s):  
George Andrew Antonelli ◽  
Tran M. Phung ◽  
Clay D. Mortensen ◽  
David Johnson ◽  
Michael D. Goodner ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Coefficient Of Thermal Expansion ◽  
Chemical Vapor ◽  
Dielectric Materials ◽  
Free Standing ◽  
Dielectric Thin Films ◽  
X Ray ◽  
Chemical Vapor Deposited ◽  
Low K

AbstractThe electrical and mechanical properties of low-k dielectric materials have received a great deal of attention in recent years; however, measurements of thermal properties such as the coefficient of thermal expansion remain minimal. This absence of data is due in part to the limited number of experimental techniques capable of measuring this parameter. Even when data does exist, it has generally not been collected on samples of a thickness relevant to current and future integrated processes. We present a procedure for using x-ray reflectivity to measure the coefficient of thermal expansion of sub-micron dielectric thin films. In particular, we elucidate the thin film mechanics required to extract this parameter for a supported film as opposed to a free-standing film. Results of measurements for a series of plasma-enhanced chemical vapor deposited and spin-on low-k dielectric thin films will be provided and compared.

Atomic Layer Deposited Hybrid Organic-Inorganic Aluminates as Potential Low-k Dielectric Materials

2015 ◽  
Vol 1791 ◽  
pp. 15-20 ◽  
Author(s):  
Karina B. Klepper ◽  
Ville Miikkulainen ◽  
Ola Nilsen ◽  
Helmer Fjellvåg ◽  
Ming Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Carboxylic Acids ◽  
Material Properties ◽  
Atomic Layer ◽  
Dielectric Materials ◽  
Low Dielectric Constant ◽  
Leakage Currents ◽  
Low Dielectric ◽  
Low K ◽  
Trimethyl Aluminum

ABSTRACTThe material properties of atomic layer deposited hybrid organic-inorganic aluminate thin films have been evaluated for potential low dielectric constant (i.e. low-k) applications. The hybrid aluminates were deposited using trimethyl aluminum and various linear and aromatic carboxylic acids. The observed electrical and mechanical properties for the hybrid aluminate films varied greatly depending on the selected organic acid with k values ranging from 2.5 to 5.1 and Young’s modulus ranging from 6 to 40 GPa. Leakage currents as low as 4 x 10-10 A/cm2 (at 2 MV/cm) were obtained for films grown using saturated linear carboxylic acids. These results suggest the potential of ALD hybrid aluminate thin films for low-k dielectric applications.

Electrical/Mechanical Properties of Porous Low-k Thin Films by Using Various Supramolecule Based Porogen

2007 ◽  
Vol 124-126 ◽  
pp. 185-188
Author(s):  
Jin Heong Yim ◽  
Young Kwon Park ◽  
Jong Ki Jeon
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Electrical Properties ◽  
Pore Diameter ◽  
Dielectric Materials ◽  
Porous Films ◽  
Low Dielectric ◽  
Mechanical And Electrical Properties ◽  
Low K ◽  
Deposited Films

The porous SSQ (silsesquioxane) films were prepared by using alkoxy silyl substituted cyclodextrin (sCD) and methyl substituted cyclodextrin (tCD) based porogen. The mechanical and electrical properties of these deposited films were investigated for the applications as low dielectric materials. The mechanical properties of porous film by using sCD are worse than those by using tCD due to its high pore interconnection length. sCD templated porous films show almost constant pore diameter as a function of porogen concentration due to strong linear polymerization of the sCD molecules through polycondensation.

Adhesion of Cu and low-k Dielectric Thin Films with Tungsten Carbide

2002 ◽  
Vol 17 (6) ◽  
pp. 1320-1328 ◽  
Author(s):  
A. M. Lemonds ◽  
K. Kershen ◽  
J. Bennett ◽  
K. Pfeifer ◽  
Y-M. Sun ◽  
...  
Keyword(s):  
Tungsten Carbide ◽  
Plasma Treatment ◽  
Dielectric Materials ◽  
Organic Polymer ◽  
Copper Films ◽  
Polymer Resin ◽  
Dielectric Surfaces ◽  
Organosilicate Glass ◽  
Ar Plasma ◽  
Low K

The adhesion of copper and various dielectric materials to tungsten carbide was studied using interfacial critical debond energies obtained by the four-point flexure method. Tungsten carbide (W2C), films 33.3 nm thick, were vapor deposited onto SiO2, spin-on carbon polymer resin (CPR), chemically vapor deposited organosilicate glass (OSG), and spin-on siloxane-organic polymer (SOP) surfaces using direct-current magnetron sputtering of a W metal target and a methane substrate plasma. Thick copper films (42.5 nm) were vapor deposited onto W2C. Some interfaces were modified by an Ar plasma, 1-nm W deposition, or O2 plasma treatment prior to Cu deposition. A W2C film deposited onto a CPR substrate was annealed for 2 h at 673 K in a 99% N2/1% H2gas mixture. For the untreated dielectric surfaces, the debond energy ranged from 39.9 to 3.95 J/m2. In order of descending adhesion energy, the substrates are ranked CPR, SiO2, SOP, and OSG. Ar plasma treatment of the SiO2 surface increased the debond energy from 20.3 to 41.3 J/m2. The Cu/W2C debond energy was 20.4 J/m2. Ar plasma or 1-nm W deposition treatment to the carbide surface moved the point of delamination from the Cu/W2C interface to the W2C/CPR interface for a Cu/W2C/CPR multilayer structure.

Determination of the Modulus and Hardness of Spin-on Zeolite Low-K Thin Films

2005 ◽  
Vol 880 ◽  
Author(s):  
Mark Johnson ◽  
Zijian Li ◽  
Yushan Yan ◽  
Junlan Wang
Keyword(s):  
Thin Films ◽  
Integrated Circuit ◽  
Material Selection ◽  
Dielectric Materials ◽  
Dielectric Constants ◽  
Depth Sensing ◽  
New Class ◽  
Low Dielectric ◽  
Pure Silica ◽  
Low K

AbstractWith the semiconductor technologies continuously pushing the miniaturization limits, there is a growing interest in developing novel low dielectric constant (low-k) materials to replace traditional dense SiO2 based insulators. In order to survive the multi-step integration process and provide reliable material and structure for the desired integrated circuit (IC) functions, the new low-k materials have to be mechanically strong and stable. Thus the material selection and mechanical characterization are vital in the successful development of next generation low-k dielectrics. A new class of low-k dielectric materials, nanoporous pure-silica zeolite, is prepared in thin films using IC compatible spin coating process and characterized using depth sensing nanoindentation technique. The elastic modulus measurements of the zeolite thin films are found to be significantly higher than that of other porous silicates with similar porosity and dielectric constants. Correlations of the mechanical, microstructural and electrical properties are discussed in detail.

Finite-Element Modeling and Quantitative Measurement Using Scanning Microwave Microscopy to Characterize Dielectric Films

2018 ◽  
Author(s):  
K. A. Rubin ◽  
W. Jolley ◽  
Y. Yang
Keyword(s):  
Thin Films ◽  
Dielectric Film ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Silicon Substrates ◽  
Fem Modeling ◽  
Dielectric Thin Films ◽  
Microwave Microscopy ◽  
Scanning Microwave Microscopy ◽  
Low K

Abstract Scanning Microwave Impedance Microscopy (sMIM) can be used to characterize dielectric thin films and to quantitatively discern film thickness differences. FEM modeling of the sMIM response provides understanding of how to connect the measured sMIM signals to the underlying properties of the dielectric film and its substrate. Modeling shows that sMIM can be used to characterize a range of dielectric film thicknesses spanning both low-k and medium-k dielectric constants. A model system consisting of SiO2 thin films of various thickness on silicon substrates is used to illustrate the technique experimentally.

The effect of the pH value on the growth and properties of chemical-bath-deposited ZnS thin films

2005 ◽  
Vol 90 (1) ◽  
pp. 106-110 ◽  
Author(s):  
A. Antony ◽  
K.V. Murali ◽  
R. Manoj ◽  
M.K. Jayaraj
Keyword(s):  
Thin Films ◽  
Ph Value

Monomer methylmethacrylate (MMA) incorporated hybrid low-k thin films

2013 ◽  
Vol 9 (6) ◽  
pp. 723-728 ◽  
Author(s):  
Bhavana N. Joshi ◽  
A. M. Mahajan
Keyword(s):  
Thin Films ◽  
Low K
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