Spectroscopic Ellipsometry as a Potential In-Line Optical Metrology Tool For Relative Porosity Measurements of Low- K Dielectric Films

2001 ◽  
Vol 697 ◽  
Author(s):  
N.V. Edwards ◽  
J. Vella ◽  
Q. Xie ◽  
S. Zollner ◽  
D. Werho ◽  
...  
Keyword(s):  
Optical Properties ◽  
Spectral Range ◽  
Spectroscopic Ellipsometry ◽  
Optical Metrology ◽  
Dielectric Films ◽  
Electron Densities ◽  
Organosilicate Glass ◽  
Relative Porosity ◽  
Low K ◽  
Porosity Measurements

AbstractThe optical properties of organosilicate glass (OSG) samples were investigated with spectroscopic ellipsometry. We found that samples with dramatically higher hardness had higher indices of refraction (RI) and thus higher electron densities and lower relative porosities than films with lower hardnesses. The reverse was true for films with low hardnesses. As well, these films did not have the same optical properties as porous SiO2 across the spectral range measured, which we show has significant implications for the in-line optical metrology of these materials.

Spectroscopic ellipsometry and ellipsometric porosimetry studies of CVD low-k dielectric films

2008 ◽  
Vol 5 (5) ◽  
pp. 1253-1256 ◽  
Author(s):  
P. Marsik ◽  
P. Verdonck ◽  
D. Schneider ◽  
D. De Roest ◽  
S. Kaneko ◽  
...  
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Dielectric Films ◽  
Ellipsometric Porosimetry ◽  
Low K

The Study of Modified Layers in SiCOH Dielectrics using Spectroscopic Ellipsometry

2003 ◽  
Vol 766 ◽  
Author(s):  
Marcus A. Worsley ◽  
Stacey F. Bent ◽  
Stephen M. Gates ◽  
Kaushik Kumar ◽  
Timothy Dalton ◽  
...  
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Silicon Oxide ◽  
Layer Model ◽  
Plasma Etch ◽  
Carbon Doped ◽  
Organosilicate Glass ◽  
Modified Layer ◽  
Intermetal Dielectric ◽  
Low K ◽  
Processing Steps

AbstractThe current challenge in designing new low-k dielectrics is realizing sufficient mechanical and chemical stability such that the material can be integrated into current damascene schemes. The material of interest in this study is a nonporous SiCOH composite (carbon-doped silicon oxide, also known as organosilicate glass “OSG”) for use as an intermetal dielectric (IMD). During integration of this IMD, processing steps such as etch, resist strip and chemicalmechanical polishing for planarization may chemically alter the outer layer of the dielectric. Here, spectroscopic ellipsometry is used to characterize the modified layer of SiCOH films after exposure to different resist strip plasmas. The data are analyzed based on a 2-layer model, consisting of a carbon-deficient layer on the surface of the low-k SiCOH dielectric. This model is supported by XPS and FTIR data. The effects of two types of plasma etch chemistry on the formation of this modified layer were studied, and differences between the two chemistries were found. The 2-layer model accurately describes the modifications produced by the oxidizing plasma, but its description of the modified layer formed by the plasma involving nitrogen is not complete. A 3-layer model with an additional nitrogen-doped layer is suggested.

Precision Xe Plasma FIB Delayering for Physical Failure Analysis of Sub-20 nm Microprocessor Devices

2017 ◽  
Author(s):  
D. Zudhistira ◽  
V. Viswanathan ◽  
V. Narang ◽  
J.M. Chin ◽  
S. Sharang ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Dielectric Films ◽  
Planar Surface ◽  
Chemical Methods ◽  
Root Cause ◽  
Essential Step ◽  
Dielectric Layers ◽  
Wet Chemical ◽  
20 Nm ◽  
Low K

Abstract Deprocessing is an essential step in the physical failure analysis of ICs. Typically, this is accomplished by techniques such as wet chemical methods, RIE, and mechanical manual polishing. Manual polishing suffers from highly non-uniform delayering particularly for sub 20nm technologies due to aggressive back-end-of-line scaling and porous ultra low-k dielectric films. Recently gas assisted Xe plasma FIB has demonstrated uniform delayering of the metal and dielectric layers, achieving a planar surface of heterogeneous materials. In this paper, the successful application of this technique to delayer sub-20 nm microprocessor chips with real defects to root cause the failure is presented.

Finite-Element Modeling and Quantitative Measurement Using Scanning Microwave Microscopy to Characterize Dielectric Films

2018 ◽  
Author(s):  
K. A. Rubin ◽  
W. Jolley ◽  
Y. Yang
Keyword(s):  
Thin Films ◽  
Dielectric Film ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Silicon Substrates ◽  
Fem Modeling ◽  
Dielectric Thin Films ◽  
Microwave Microscopy ◽  
Scanning Microwave Microscopy ◽  
Low K

Abstract Scanning Microwave Impedance Microscopy (sMIM) can be used to characterize dielectric thin films and to quantitatively discern film thickness differences. FEM modeling of the sMIM response provides understanding of how to connect the measured sMIM signals to the underlying properties of the dielectric film and its substrate. Modeling shows that sMIM can be used to characterize a range of dielectric film thicknesses spanning both low-k and medium-k dielectric constants. A model system consisting of SiO2 thin films of various thickness on silicon substrates is used to illustrate the technique experimentally.

scholarly journals Optical Characterization of Ultra-Thin Films of Azo-Dye-Doped Polymers Using Ellipsometry and Surface Plasmon Resonance Spectroscopy

Photonics ◽  
2021 ◽  
Vol 8 (2) ◽  
pp. 41
Author(s):  
Najat Andam ◽  
Siham Refki ◽  
Hidekazu Ishitobi ◽  
Yasushi Inouye ◽  
Zouheir Sekkat
Keyword(s):  
Refractive Index ◽  
Optical Properties ◽  
Surface Plasmon Resonance ◽  
Surface Plasmon ◽  
Spectroscopic Ellipsometry ◽  
Plasmon Resonance ◽  
Complex Refractive Index ◽  
Resonance Spectroscopy ◽  
Doped Polymers

The determination of optical constants (i.e., real and imaginary parts of the complex refractive index (nc) and thickness (d)) of ultrathin films is often required in photonics. It may be done by using, for example, surface plasmon resonance (SPR) spectroscopy combined with either profilometry or atomic force microscopy (AFM). SPR yields the optical thickness (i.e., the product of nc and d) of the film, while profilometry and AFM yield its thickness, thereby allowing for the separate determination of nc and d. In this paper, we use SPR and profilometry to determine the complex refractive index of very thin (i.e., 58 nm) films of dye-doped polymers at different dye/polymer concentrations (a feature which constitutes the originality of this work), and we compare the SPR results with those obtained by using spectroscopic ellipsometry measurements performed on the same samples. To determine the optical properties of our film samples by ellipsometry, we used, for the theoretical fits to experimental data, Bruggeman’s effective medium model for the dye/polymer, assumed as a composite material, and the Lorentz model for dye absorption. We found an excellent agreement between the results obtained by SPR and ellipsometry, confirming that SPR is appropriate for measuring the optical properties of very thin coatings at a single light frequency, given that it is simpler in operation and data analysis than spectroscopic ellipsometry.

The characterization and preparation of porous low dielectric films using various cyclodextrins as template materials

2003 ◽  
Vol 766 ◽  
Author(s):  
Jin-Heong Yim ◽  
Jung-Bae Kim ◽  
Hyun-Dam Jeong ◽  
Yi-Yeoul Lyu ◽  
Sang Kook Mah ◽  
...  
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Dielectric Constant ◽  
Pore Structure ◽  
Pore Diameter ◽  
Dielectric Films ◽  
Low Dielectric Constant ◽  
Cyclodextrin Derivatives ◽  
Low Dielectric ◽  
Low K

AbstractPorous low dielectric films containing nano pores (∼20Å) with low dielectric constant (<2.2), have been prepared by using various kinds of cyclodextrin derivatives as porogenic materials. The pore structure such as pore size and interconnectivity can be controlled by changing functional groups of the cyclodextrin derivatives. We found that mechanical properties of porous low-k thin film prepared with mCSSQ (modified cyclic silsesquioxane) precursor and cyclodextrin derivatives were correlated with the pore interconnection length. The longer the interconnection length of nanopores in the thin film, the worse the mechanical properties of the thin film (such as hardness and modulus) even though the pore diameter of the films were microporous (∼2nm).

Inline control of an ultra low-k ILD layer using Broadband Spectroscopic Ellipsometry

2011 ◽  
Author(s):  
Ronny Haupt ◽  
Jiang Zhiming ◽  
Leander Haensel ◽  
Ulf Peter Mueller ◽  
Ulrich Mayer
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Low K

Copper Drifts in Porous Methylsilsesquiazane Low-k Dielectric Films

2000 ◽  
Author(s):  
T. Kikkawa ◽  
S. Mukaigawa ◽  
T. Oda ◽  
T. Aoki ◽  
Y. Shimizu
Keyword(s):  
Dielectric Films ◽  
Low K
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