Ion-induced effects on grain boundaries and a-Si:H tissue quality in microcrystalline silicon films

2012 ◽  
Vol 30 (6) ◽  
pp. 061512 ◽  
Author(s):  
A. C. Bronneberg ◽  
N. Cankoy ◽  
M. C. M. van de Sanden ◽  
M. Creatore
2003 ◽  
Vol 762 ◽  
Author(s):  
Joon-Yong Lee ◽  
Dong-Hyun Park ◽  
Jong-Hwan Yoon

AbstractIn this work we have investigated the low-energy photoluminescence (PL) band with a peak between 0.8 eV and 1.0 eV for microcrystalline silicon films (μc-Si:H) grown under various growth conditions. At least four subbands are observed, the peaks of which are located near 0.80 eV, 0.87 eV, 0.92 eV, and 0.97 eV, respectively. It is suggested that the low-energy PL band basically arises from a superposition of these subbands, whose intensities strongly depend on deposition conditions, and thus its peak is determined by the sum of these subband intensities. From the results, it is suggested that the subband centered at 0.92 eV originates from defect-related radiative recombination in the amorphous phase rather than radiative band tail-to-tail transitions in the grain boundaries.


1995 ◽  
Vol 142 (5) ◽  
pp. 1663-1666 ◽  
Author(s):  
Ahalapitiya Hewage Jayatissa ◽  
Yoichiro Nakanishi ◽  
Yosinori Hatanaka

1983 ◽  
Vol 59-60 ◽  
pp. 715-718 ◽  
Author(s):  
Tadashi Saitoh ◽  
Toshikazu Shimada ◽  
Masataka Migitaka ◽  
Yasuo Tarui

1992 ◽  
Vol 42-44 ◽  
pp. 1398-1402 ◽  
Author(s):  
W. Zimmermann-Edling ◽  
R. Wiesendanger ◽  
F. Finger ◽  
K. Prasad ◽  
A. Shah

2006 ◽  
Vol 501 (1-2) ◽  
pp. 129-132 ◽  
Author(s):  
N. Souffi ◽  
G.H. Bauer ◽  
R. Brüggemann

Sign in / Sign up

Export Citation Format

Share Document