Effect of additional VHF plasma source base on conventional RF-PECVD for large area fast growth microcrystalline silicon films

2011 ◽  
Vol 11 (5) ◽  
pp. S54-S57 ◽  
Author(s):  
Youn J. Kim ◽  
Yoon S. Choi ◽  
In S. Choi ◽  
Jeon G. Han
Keyword(s):  
Plasma Source ◽  
Fast Growth ◽  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Large Area

Large area microcrystalline silicon films grown by ECR-CVD

2001 ◽  
Vol 383 (1-2) ◽  
pp. 181-184 ◽  
Author(s):  
S. Ferrero ◽  
P. Mandracci ◽  
G. Cicero ◽  
F. Giorgis ◽  
C.F. Pirri ◽  
...  
Keyword(s):  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Large Area

Working Pressure Effects on Deposition of Large-Area Microcrystalline Silicon Films on Flexible Plastic Substrate at 130°C

2002 ◽  
Vol 41 (Part 2, No. 9A/B) ◽  
pp. L978-L980 ◽  
Author(s):  
Akihiro Takano ◽  
Takehito Wada ◽  
Makoto Shimosawa ◽  
Shinji Fujikake ◽  
Takashi Yoshida
Keyword(s):  
Silicon Films ◽  
Pressure Effects ◽  
Plastic Substrate ◽  
Microcrystalline Silicon ◽  
Large Area ◽  
Working Pressure ◽  
Flexible Plastic Substrate

Synthesis of Microcrystalline Silicon Films Using High-Density Microwave Plasma Source from Dichlorosilane

2007 ◽  
Vol 46 (No. 28) ◽  
pp. L696-L698 ◽  
Author(s):  
Jhantu Kumar Saha ◽  
Naoyuki Ohse ◽  
Kazu Hamada ◽  
Koji Haruta ◽  
Tomohiro Kobayashi ◽  
...  
Keyword(s):  
Microwave Plasma ◽  
Plasma Source ◽  
High Density ◽  
Silicon Films ◽  
Microcrystalline Silicon

Material Structure of Microcrystalline Silicon Deposited with an Expanding Thermal Plasma

2003 ◽  
Vol 762 ◽  
Author(s):  
C. Smit ◽  
D.L. Williamson ◽  
M.C.M. van de Sanden ◽  
R.A.C.M.M. van Swaaij
Keyword(s):  
Thermal Plasma ◽  
Hydrogen Plasma ◽  
Plasma Chemistry ◽  
Plasma Source ◽  
Growth Direction ◽  
Interaction Time ◽  
Material Structure ◽  
Average Particle ◽  
Microcrystalline Silicon ◽  
X Ray

AbstractExpanding thermal plasma CVD (ETP CVD) has been used to deposit thin microcrystalline silicon films. In this study we varied the position at which the silane is injected in the expanding hydrogen plasma: relatively far from the substrate and close to the plasma source, giving a long interaction time of the plasma with the silane, and close to the substrate, resulting in a short interaction time. The material structure is studied extensively. The crystalline fractions as obtained from Raman spectroscopy as well as from X-ray diffraction (XRD) vary from 0 to 67%. The average particle sizes vary from 6 to 17 nm as estimated from the (111) XRD peak using the Scherrer formula. Small angle X-ray scattering (SAXS) and flotation density measurements indicate void volume fractions of about 4 to 6%. When the samples are tilted the SAXS signal is lower than for the untilted case, indicating elongated objects parallel to the growth direction in the films. We show that the material properties are influenced by the position of silane injection in the reactor, indicating a change in the plasma chemistry.

Pattern Writing by Implantation in a Large-Scale PSII System With Planar Inductively Coupled Plasma Source

2000 ◽  
Vol 624 ◽  
Author(s):  
Lingling Wu ◽  
Hongjun Gao ◽  
Dennis M. Manos
Keyword(s):  
Inductively Coupled Plasma ◽  
Large Scale ◽  
Lateral Diffusion ◽  
Plasma Source ◽  
Direct Writing ◽  
Large Area ◽  
Depth Profiles ◽  
Geometric Patterns ◽  
Planar Coil ◽  
Rf Antenna

ABSTRACTA large-scale plasma source immersion ion implantation (PSII) system with planar coil RFI plasma source has been used to study an inkless, deposition-free, mask-based surface conversion patterning as an alternative to direct writing techniques on large-area substrates by implantation. The apparatus has a 0.61 m ID and 0.51 m tall chamber, with a base pressure in the 10−8 Torr range, making it one of the largest PSII presently available. The system uses a 0.43 m ID planar rf antenna to produce dense plasma capable of large-area, uniform materials treatment. Metallic and semiconductor samples have been implanted through masks to produce small geometric patterns of interest for device manufacturing. Si gratings were also implanted to study application to smaller features. Samples are characterized by AES, TEM and variable-angle spectroscopic ellipsometry. Composition depth profiles obtained by AES and VASE are compared. Measured lateral and depth profiles are compared to the mask features to assess lateral diffusion, pattern transfer fidelity, and wall-effects. The paper also presents the results of MAGIC calculations of the flux and angle of ion trajectories through the boundary layer predicting the magnitude of flux as a function of 3-D location on objects in the expanding sheath

Microcrystalline Silicon Films Deposited by Cathode‐Type RF Glow Discharge Technique

1995 ◽  
Vol 142 (5) ◽  
pp. 1663-1666 ◽  
Author(s):  
Ahalapitiya Hewage Jayatissa ◽  
Yoichiro Nakanishi ◽  
Yosinori Hatanaka
Keyword(s):  
Glow Discharge ◽  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Rf Glow Discharge
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