Origin of the Low-Energy Photoluminescence in Microcrystalline Silicon Films

2003 ◽  
Vol 762 ◽  
Author(s):  
Joon-Yong Lee ◽  
Dong-Hyun Park ◽  
Jong-Hwan Yoon
Keyword(s):  
Grain Boundaries ◽  
Amorphous Phase ◽  
Radiative Recombination ◽  
Growth Conditions ◽  
Low Energy ◽  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Band Tail ◽  
Deposition Conditions

AbstractIn this work we have investigated the low-energy photoluminescence (PL) band with a peak between 0.8 eV and 1.0 eV for microcrystalline silicon films (μc-Si:H) grown under various growth conditions. At least four subbands are observed, the peaks of which are located near 0.80 eV, 0.87 eV, 0.92 eV, and 0.97 eV, respectively. It is suggested that the low-energy PL band basically arises from a superposition of these subbands, whose intensities strongly depend on deposition conditions, and thus its peak is determined by the sum of these subband intensities. From the results, it is suggested that the subband centered at 0.92 eV originates from defect-related radiative recombination in the amorphous phase rather than radiative band tail-to-tail transitions in the grain boundaries.

Spin Resonance Studies on free Electrons and Defects in Microcrystalline Silicon

1994 ◽  
Vol 358 ◽  
Author(s):  
C. Malten ◽  
F. Finger ◽  
P. Hapke ◽  
T. Kulessa ◽  
C. Walker ◽  
...  
Keyword(s):  
Electron Spin Resonance ◽  
Grain Boundaries ◽  
Amorphous Phase ◽  
Electron Spin ◽  
Degree Of Crystallinity ◽  
Microcrystalline Silicon ◽  
Free Electrons ◽  
Conduction Band Offset ◽  
Spin Resonance ◽  
Material Points

ABSTRACTThe effect of micro-doping, defect creation, and non-steady state occupation through optical transitions on the electron spin resonance signals found in undoped and weakly doped microcrystalline silicon with a high degree of crystallinity is investigated. The experimental results are in agreement with the assignment of the resonance at g=1.9983 to conduction electrons in the crystalline grains and the resonanccs around g=2.0052 to dangling bonds in the remaining amorphous phase and at the grain boundaries. The simultaneous presence of both resonances can result from a large conduction band offset between crystalline grains and grain boundaries or the amorphous phase. The presence of conduction electron spin resonance in compensated and even p-type material points also to potential fluctuations. Free electrons in interconnected crystalline grains are in agreement with the weakly activated transport found in µc-Si:H at low temperatures.

The study of amorphous incubation layers during the growth of microcrystalline silicon films under different deposition conditions

2010 ◽  
Vol 19 (8) ◽  
pp. 087206 ◽  
Author(s):  
Chen Yong-Sheng ◽  
Xu Yan-Hua ◽  
Gu Jin-Hua ◽  
Lu Jing-Xiao ◽  
Yang Shi-E ◽  
...  
Keyword(s):  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Deposition Conditions

Investigation of the Electronic Transport in Pin Solar Cells Based on Microcrystalline Silicon by 2D Numerical Modeling

1998 ◽  
Vol 507 ◽  
Author(s):  
J. Zimmer ◽  
H. Stiebig ◽  
H. Wagner
Keyword(s):  
Numerical Modeling ◽  
Solar Cells ◽  
Grain Boundaries ◽  
Transport Properties ◽  
Amorphous Phase ◽  
Electronic Transport ◽  
Crystalline Silicon ◽  
Defect Density ◽  
Simulated Data ◽  
Microcrystalline Silicon

ABSTRACTWe investigated the transport and recombination behavior of pin solar cells based on micro- crystalline silicon (μc-Si:H). A comparison of experimental and simulated data of the dark I/V- curves, the I/V-behavior under AM1.5 illumination as well as the quantum efficiency reveals an enhanced defect density in μc-Si:H compared to c-Si which could be located as defect rich grain boundaries around the crystallites. Further, in case there is amorphous phase in the material, the distribution of a-Si:H around the crystallites is unlikely, since the electronic transport properties are disturbed, whereas an arrangement in the shape of extended areas does not affect the transport behavior significantly due to occurrence of percolation.

Photoluminescence Characterization of Hydrogenated Nanocrystalline/Amorphous Silicon

2009 ◽  
Vol 1153 ◽  
Author(s):  
Jeremy D Fields ◽  
Craig Taylor ◽  
Juliuz George Radziszewski ◽  
David Baker ◽  
Guozhen Yue ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Amorphous Silicon ◽  
Crystallization Temperature ◽  
Excitation Intensity ◽  
Low Energy ◽  
Luminescence Spectra ◽  
Band Tail ◽  
Oxygen Defects ◽  
Energy Peak

AbstractThe photoluminescence in a nc-Si/a-Si:H mixture has been investigated at varying excitation intensities, and temperatures We have also observed changes in the luminescence spectra, which are induced by sequential annealing at temperatures below the a-Si:H crystallization temperature (˜ 600°C). Two predominant luminescence peaks are observed at ˜ 0.95 eV and ˜ 1.30 eV, which are attributed to band tail-to-band tail transitions near the nc-Si grain boundaries and in the a-Si:H bulk, respectively. The 0.95 eV band saturates approaching 500 mW/cm2 excitation intensity. Annealing the nc-Si/a-Si:H mixture brings out a new low energy peak, centered at ˜ 0.70 eV, and which we believe to be due to oxygen defects.

Microcrystalline Silicon Films Deposited by Cathode‐Type RF Glow Discharge Technique

1995 ◽  
Vol 142 (5) ◽  
pp. 1663-1666 ◽  
Author(s):  
Ahalapitiya Hewage Jayatissa ◽  
Yoichiro Nakanishi ◽  
Yosinori Hatanaka
Keyword(s):  
Glow Discharge ◽  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Rf Glow Discharge

Preparation and properties of microcrystalline silicon films using photochemical vapor deposition

1983 ◽  
Vol 59-60 ◽  
pp. 715-718 ◽  
Author(s):  
Tadashi Saitoh ◽  
Toshikazu Shimada ◽  
Masataka Migitaka ◽  
Yasuo Tarui
Keyword(s):  
Vapor Deposition ◽  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Photochemical Vapor Deposition

Properties and Production Mechanism of Low-Temperature Deposited CAT-CVD Poly-Silicon films

1992 ◽  
Vol 283 ◽  
Author(s):  
Hideki Matsumura ◽  
Yoichi Hosoda ◽  
Seijiro Furukawa
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Gas Pressure ◽  
Silicon Films ◽  
Production Mechanism ◽  
Cvd Method ◽  
Poly Silicon ◽  
Deposition Conditions

ABSTRACTPoly-silicon films are obtained at temperatures as low as 400 °C by the catalytic chemical vapor deposition (cat-CVD) method, in which deposition gases are decomposed by the catalytic or pyrolytic reactions with a heated catalyzer near substrates. It is found that there are roughly two modes of deposition conditions such as low gas pressure mode and high gas pressure mode for obtaining poly-silicon films, and also that the Hall mobility of the cat-CVD poly-silicon films of low gas pressure mode sometimes exceeds over 100 cm2/Vs.

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