Studies on Al/ZrO2/GaAs metal-oxide-semiconductor capacitors and determination of its electrical parameters in the frequency range of 10 kHz–1 MHz

Souvik Kundu; Sandipta Roy; P. Banerji; Supratic Chakraborty; T. Shripathi

doi:10.1116/1.3585608

Studies on Al/ZrO2/GaAs metal-oxide-semiconductor capacitors and determination of its electrical parameters in the frequency range of 10 kHz–1 MHz

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3585608 ◽

2011 ◽

Vol 29 (3) ◽

pp. 031203 ◽

Cited By ~ 26

Author(s):

Souvik Kundu ◽

Sandipta Roy ◽

P. Banerji ◽

Supratic Chakraborty ◽

T. Shripathi

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Range ◽

Electrical Parameters

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Determination of Fowler–Nordheim tunneling parameters in Metal–Oxide–Semiconductor structure including oxide field correction using a vertical optimization method

Solid-State Electronics ◽

10.1016/j.sse.2016.04.007 ◽

2016 ◽

Vol 122 ◽

pp. 56-63 ◽

Cited By ~ 9

Author(s):

S. Toumi ◽

Z. Ouennoughi ◽

K.C. Strenger ◽

L. Frey

Keyword(s):

Metal Oxide ◽

Optimization Method ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

Nordheim Tunneling ◽

Metal Oxide Semiconductor Structure

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Determination of the Interface Trap Density in Metal Oxide Semiconductor Field-Effect Transistor through Subthreshold Slope Measurement

Japanese Journal of Applied Physics ◽

10.1143/jjap.32.4393 ◽

1993 ◽

Vol 32 (Part 1, No. 10) ◽

pp. 4393-4397 ◽

Cited By ~ 17

Author(s):

Jong-Son Lyu ◽

Kee-Soo Nam ◽

Choochon Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Trap Density ◽

Interface Trap ◽

Subthreshold Slope ◽

Effect Transistor

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Determination of Flat-Band Voltages for Fully Depleted Silicon-on-Insulator (SOI) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET's)

Japanese Journal of Applied Physics ◽

10.1143/jjap.31.2678 ◽

1992 ◽

Vol 31 (Part 1, No. 9A) ◽

pp. 2678-2681 ◽

Cited By ~ 2

Author(s):

Jong-Son Lyu ◽

Kee-Soo Nam ◽

Choochon Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Flat Band ◽

Fully Depleted

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Experimental determination of the frequency factor of thermal annealing processes in metal–oxide–semiconductor gate-oxide structures

Journal of Applied Physics ◽

10.1063/1.365721 ◽

1997 ◽

Vol 82 (8) ◽

pp. 4102-4107 ◽

Cited By ~ 20

Author(s):

F. Saigné ◽

L. Dusseau ◽

L. Albert ◽

J. Fesquet ◽

J. Gasiot ◽

...

Keyword(s):

Metal Oxide ◽

Experimental Determination ◽

Thermal Annealing ◽

Gate Oxide ◽

Frequency Factor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Determination of physical mechanism responsible for the capacitance-voltage weak inversion “hump” phenomenon in n-InGaAs based metal-oxide-semiconductor gate stacks

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.5085065 ◽

2019 ◽

Vol 37 (3) ◽

pp. 031202

Author(s):

Igor Krylov

Keyword(s):

Metal Oxide ◽

Physical Mechanism ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Weak Inversion ◽

Capacitance Voltage

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Determination of bulk and interface density of states in metal oxide semiconductor thin-film transistors by using capacitance–voltage characteristics

The European Physical Journal Applied Physics ◽

10.1051/epjap/2017170179 ◽

2017 ◽

Vol 80 (1) ◽

pp. 10103 ◽

Cited By ~ 6

Author(s):

Xixiong Wei ◽

Wanling Deng ◽

Jielin Fang ◽

Xiaoyu Ma ◽

Junkai Huang

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Density Of States ◽

Thin Film Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Capacitance Voltage ◽

Semiconductor Thin Film

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Double‐crystal x‐ray topographic determination of local strain in metal‐oxide‐semiconductor device structures

Applied Physics Letters ◽

10.1063/1.98483 ◽

1987 ◽

Vol 51 (22) ◽

pp. 1827-1829 ◽

Cited By ~ 13

Author(s):

Syed B. Qadri ◽

David Ma ◽

Martin Peckerar

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Local Strain ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Crystal ◽

X Ray ◽

Device Structures

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Accurate determination of shallow doping profiles and interface states for metal–oxide–semiconductor structures from measured capacitance–voltage data

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.587122 ◽

1994 ◽

Vol 12 (1) ◽

pp. 342 ◽

Cited By ~ 1

Author(s):

A. L. M. Osse

Keyword(s):

Metal Oxide ◽

Accurate Determination ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Capacitance Voltage ◽

Doping Profiles

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Determination of the Minority Carrier Surface Thermogeneration Rate in Metal-Oxide-Semiconductor Structures

Instruments and Experimental Techniques ◽

10.1007/s10786-005-0086-y ◽

2005 ◽

Vol 48 (4) ◽

pp. 498-502

Author(s):

G. V. Chucheva ◽

A. G. Zhdan ◽

G. A. Akhmedov ◽

N. F. Kukharskaya

Keyword(s):

Metal Oxide ◽

Minority Carrier ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

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Accurate Determination of Defects in the Gate Oxide of Si Metal Oxide Semiconductor Devices by Propane Infiltration

Journal of The Electrochemical Society ◽

10.1149/1.2221651 ◽

1993 ◽

Vol 140 (6) ◽

pp. L89-L92

Author(s):

J. P. Li ◽

A. J. Steckl

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Accurate Determination ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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