Accurate Determination of Defects in the Gate Oxide of Si Metal Oxide Semiconductor Devices by Propane Infiltration

J. P. Li; A. J. Steckl

doi:10.1149/1.2221651

Accurate Determination of Defects in the Gate Oxide of Si Metal Oxide Semiconductor Devices by Propane Infiltration

Journal of The Electrochemical Society ◽

10.1149/1.2221651 ◽

1993 ◽

Vol 140 (6) ◽

pp. L89-L92

Author(s):

J. P. Li ◽

A. J. Steckl

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Accurate Determination ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Electrical Properties of 4H-Silicon Carbide Complementary Metal–Oxide–Semiconductor Devices with Wet-Processed Gate Oxide

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c087 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C087 ◽

Cited By ~ 6

Author(s):

Mitsuo Okamoto ◽

Tsutomu Yatsuo ◽

Kenji Fukuda ◽

Hajime Okumura

Keyword(s):

Silicon Carbide ◽

Electrical Properties ◽

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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A Low-Leakage Epitaxial High-κ Gate Oxide for Germanium Metal–Oxide–Semiconductor Devices

ACS Applied Materials & Interfaces ◽

10.1021/acsami.5b10661 ◽

2016 ◽

Vol 8 (8) ◽

pp. 5416-5423 ◽

Cited By ~ 6

Author(s):

Chengqing Hu ◽

Martin D. McDaniel ◽

Aiting Jiang ◽

Agham Posadas ◽

Alexander A. Demkov ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Low Leakage

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Experimental determination of the frequency factor of thermal annealing processes in metal–oxide–semiconductor gate-oxide structures

Journal of Applied Physics ◽

10.1063/1.365721 ◽

1997 ◽

Vol 82 (8) ◽

pp. 4102-4107 ◽

Cited By ~ 20

Author(s):

F. Saigné ◽

L. Dusseau ◽

L. Albert ◽

J. Fesquet ◽

J. Gasiot ◽

...

Keyword(s):

Metal Oxide ◽

Experimental Determination ◽

Thermal Annealing ◽

Gate Oxide ◽

Frequency Factor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Effect of Wet Etched Thickness and Reoxidation on Reliability of Dual Gate Oxide for Sub-Quarter Micron Complementary Metal-Oxide-Semiconductor Devices

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.2167 ◽

2000 ◽

Vol 39 (Part 1, No. 4B) ◽

pp. 2167-2171 ◽

Cited By ~ 1

Author(s):

Ihl Hyun Cho ◽

Nag Kyunn Sung ◽

Jong Hyuk Oh ◽

Min Soo Park ◽

Dong Kyun Sohn ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Dual Gate

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Fully Quantum-Mechanical Calculation of Hole Direct Tunneling Current in Ultrathin Gate Oxide p-Channel Metal-Oxide-Semiconductor Devices

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.552 ◽

2002 ◽

Vol 41 (Part 1, No. 2A) ◽

pp. 552-556 ◽

Cited By ~ 3

Author(s):

Hideyuki Iwata

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Tunneling Current ◽

Gate Oxide ◽

Quantum Mechanical Calculation ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Mechanical Calculation ◽

Direct Tunneling Current

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GaAs metal-oxide-semiconductor devices with a complex gate oxide composed of SiO2and GaAs oxide grown using a photoelectrochemical oxidation method

Semiconductor Science and Technology ◽

10.1088/0268-1242/25/1/015005 ◽

2009 ◽

Vol 25 (1) ◽

pp. 015005 ◽

Cited By ~ 2

Author(s):

Hsin-Ying Lee ◽

Yuan-Fu Lin

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Oxidation Method ◽

Photoelectrochemical Oxidation

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Improvement of Hot-Electron Hardness in Metal-Oxide-Semiconductor Devices by Combination of Gate Electrode Deposited Using Amorphous Si and Gate Oxide Grown in N2O

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.l968 ◽

1996 ◽

Vol 35 (Part 2, No. 8A) ◽

pp. L968-L970 ◽

Cited By ~ 4

Author(s):

Kuei-Shu Chang-Liao ◽

Tang-Yuan Lan

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Electron ◽

Gate Electrode ◽

Amorphous Si

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Accurate determination of shallow doping profiles and interface states for metal–oxide–semiconductor structures from measured capacitance–voltage data

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.587122 ◽

1994 ◽

Vol 12 (1) ◽

pp. 342 ◽

Cited By ~ 1

Author(s):

A. L. M. Osse

Keyword(s):

Metal Oxide ◽

Accurate Determination ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Capacitance Voltage ◽

Doping Profiles

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Determination of electron trap distribution in the gate–oxide region of the deep submicron metal–oxide–semiconductor structure from direct tunneling gate current

Applied Physics Letters ◽

10.1063/1.1463705 ◽

2002 ◽

Vol 80 (12) ◽

pp. 2123-2125 ◽

Cited By ~ 4

Author(s):

Murshed Mahmud Chowdhury ◽

Saif uz Zaman ◽

A. Haque ◽

M. Rezwan Khan

Keyword(s):

Metal Oxide ◽

Gate Oxide ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Electron Trap ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

Gate Current ◽

Metal Oxide Semiconductor Structure

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Simple method for evaluating process‐induced charging damage to the gate oxide of metal‐oxide‐semiconductor devices

Applied Physics Letters ◽

10.1063/1.117480 ◽

1996 ◽

Vol 69 (12) ◽

pp. 1770-1772 ◽

Cited By ~ 1

Author(s):

Tomasz Brożek ◽

Chand R. Viswanathan

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Simple Method

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