Double‐crystal x‐ray topographic determination of local strain in metal‐oxide‐semiconductor device structures

Syed B. Qadri; David Ma; Martin Peckerar

doi:10.1063/1.98483

Double‐crystal x‐ray topographic determination of local strain in metal‐oxide‐semiconductor device structures

Applied Physics Letters ◽

10.1063/1.98483 ◽

1987 ◽

Vol 51 (22) ◽

pp. 1827-1829 ◽

Cited By ~ 13

Author(s):

Syed B. Qadri ◽

David Ma ◽

Martin Peckerar

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Local Strain ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Crystal ◽

X Ray ◽

Device Structures

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Characterization of the electrical bias induced strain variation in metal–oxide–semiconductor field effect transistors using x‐ray double crystal topography

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.578195 ◽

1992 ◽

Vol 10 (4) ◽

pp. 1012-1019

Author(s):

David I Ma ◽

Syed B. Qadri ◽

Martin C. Peckerar ◽

Daniel McCarthy

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strain Variation ◽

Double Crystal ◽

X Ray ◽

Electrical Bias

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Local strain measurement in a strain-engineered complementary metal-oxide-semiconductor device by geometrical phase analysis in the transmission electron microscope

Applied Physics Letters ◽

10.1063/1.2970050 ◽

2008 ◽

Vol 93 (8) ◽

pp. 081909 ◽

Cited By ~ 12

Author(s):

Jayhoon Chung ◽

Guoda Lian ◽

Lew Rabenberg

Keyword(s):

Electron Microscope ◽

Metal Oxide ◽

Transmission Electron Microscope ◽

Strain Measurement ◽

Semiconductor Device ◽

Complementary Metal Oxide Semiconductor ◽

Local Strain ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Transmission Electron

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Determination of Fowler–Nordheim tunneling parameters in Metal–Oxide–Semiconductor structure including oxide field correction using a vertical optimization method

Solid-State Electronics ◽

10.1016/j.sse.2016.04.007 ◽

2016 ◽

Vol 122 ◽

pp. 56-63 ◽

Cited By ~ 9

Author(s):

S. Toumi ◽

Z. Ouennoughi ◽

K.C. Strenger ◽

L. Frey

Keyword(s):

Metal Oxide ◽

Optimization Method ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

Nordheim Tunneling ◽

Metal Oxide Semiconductor Structure

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Thin germanium-carbon alloy layers grown directly on silicon for metal-oxide-semiconductor device applications

Applied Physics Letters ◽

10.1063/1.2195008 ◽

2006 ◽

Vol 88 (15) ◽

pp. 152101 ◽

Cited By ~ 15

Author(s):

D. Q. Kelly ◽

I. Wiedmann ◽

J. P. Donnelly ◽

S. V. Joshi ◽

S. Dey ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Device Applications

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Interface characterization of a metal-oxide-semiconductor structure by biased X-ray photoelectron spectroscopy

Surface and Interface Analysis ◽

10.1002/sia.3154 ◽

2010 ◽

Vol 42 (2) ◽

pp. 70-76 ◽

Cited By ~ 1

Author(s):

M. Yoshitake ◽

K. Ohmori ◽

T. Chikyow

Keyword(s):

Metal Oxide ◽

Photoelectron Spectroscopy ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

X Ray ◽

Interface Characterization ◽

Metal Oxide Semiconductor Structure

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Defects Induced by Deep Preamorphization and Their Effects on Metal Oxide Semiconductor Device Characteristics

Journal of The Electrochemical Society ◽

10.1149/1.1837523 ◽

1997 ◽

Vol 144 (3) ◽

pp. 1020-1024 ◽

Cited By ~ 6

Author(s):

Masayasu Miyake ◽

Mitsutoshi Takahashi

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Investigation of band structure at metal-gate/high-k interface of metal oxide semiconductor device with high-k and metal gate stack

2012 12th International Workshop on Junction Technology ◽

10.1109/iwjt.2012.6212837 ◽

2012 ◽

Author(s):

Xiaolei Wang ◽

Wenwu Wang ◽

Kai Han ◽

Hong Yang ◽

Jing Zhang ◽

...

Keyword(s):

Band Structure ◽

Metal Oxide ◽

Semiconductor Device ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

Gate Stack ◽

High K

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Improved Extrapolation Method of Ultrathin Oxide Thickness Using C-V Characteristics of Metal-Oxide-Semiconductor Device

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.l549 ◽

2002 ◽

Vol 41 (Part 2, No. 5B) ◽

pp. L549-L551

Author(s):

Hyundoek Yang ◽

Hyo Sik Chang ◽

Hyunsang Hwang

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Extrapolation Method ◽

Oxide Semiconductor ◽

Ultrathin Oxide

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Efficient ultraviolet electroluminescence from a Gd-implanted silicon metal–oxide–semiconductor device

Applied Physics Letters ◽

10.1063/1.1808488 ◽

2004 ◽

Vol 85 (16) ◽

pp. 3387-3389 ◽

Cited By ~ 49

Author(s):

J. M. Sun ◽

W. Skorupa ◽

T. Dekorsy ◽

M. Helm ◽

L. Rebohle ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Determination of the Interface Trap Density in Metal Oxide Semiconductor Field-Effect Transistor through Subthreshold Slope Measurement

Japanese Journal of Applied Physics ◽

10.1143/jjap.32.4393 ◽

1993 ◽

Vol 32 (Part 1, No. 10) ◽

pp. 4393-4397 ◽

Cited By ~ 17

Author(s):

Jong-Son Lyu ◽

Kee-Soo Nam ◽

Choochon Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Trap Density ◽

Interface Trap ◽

Subthreshold Slope ◽

Effect Transistor

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