Experimental determination of the frequency factor of thermal annealing processes in metal–oxide–semiconductor gate-oxide structures

1997 ◽  
Vol 82 (8) ◽  
pp. 4102-4107 ◽  
Author(s):  
F. Saigné ◽  
L. Dusseau ◽  
L. Albert ◽  
J. Fesquet ◽  
J. Gasiot ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Experimental Determination ◽  
Thermal Annealing ◽  
Gate Oxide ◽  
Frequency Factor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

Octahedral-Structured Gigantic Precipitates as the Origin of Gate-Oxide Defects in Metal-Oxide-Semiconductor Large-Scale-Integrated Circuits

1996 ◽  
Vol 35 (Part 1, No. 2B) ◽  
pp. 812-817 ◽  
Author(s):  
Manabu Itsumi ◽  
Hideo Akiya ◽  
Takemi Ueki ◽  
Masato Tomita ◽  
Masataka Yamawaki
Keyword(s):  
Integrated Circuits ◽  
Metal Oxide ◽  
Large Scale ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Oxide Defects
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