Effect of AlN growth temperature on trap densities ofin-situmetal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors

Joseph J. Freedsman; Toshiharu Kubo; Takashi Egawa

doi:10.1063/1.4722642

Effect of AlN growth temperature on trap densities ofin-situmetal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors

AIP Advances ◽

10.1063/1.4722642 ◽

2012 ◽

Vol 2 (2) ◽

pp. 022134 ◽

Cited By ~ 7

Author(s):

Joseph J. Freedsman ◽

Toshiharu Kubo ◽

Takashi Egawa

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Organic Chemical ◽

Metal Insulator ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors ◽

Organic Chemical Vapor Deposition

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Metal-organic chemical vapor deposition of quasi-normally-off AlGaN/GaN field-effect transistors on silicon substrates using low-temperature grown AlN cap layers

Applied Physics Letters ◽

10.1063/1.3475394 ◽

2010 ◽

Vol 97 (5) ◽

pp. 053502 ◽

Cited By ~ 6

Author(s):

S. Tan ◽

S. L. Selvaraj ◽

T. Egawa

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Organic Chemical ◽

Silicon Substrates ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Noise Analysis of Nitride-Based Metal–Oxide–Semiconductor Heterostructure Field Effect Transistors with Photo-Chemical Vapor Deposition SiO2Gate Oxide in the Linear and Saturation Regions

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.3405 ◽

2006 ◽

Vol 45 (4B) ◽

pp. 3405-3409 ◽

Cited By ~ 6

Author(s):

Yu-Zung Chiou ◽

Yan-Kuin Su ◽

Jeng Gong ◽

Shoou-Jinn Chang ◽

Chun-Kai Wang

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistors ◽

Noise Analysis ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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Ferroelectric YMnO3 thin films grown by metal-organic chemical vapor deposition for metal/ferroelectric/semiconductor field-effect transistors

Thin Solid Films ◽

10.1016/s0040-6090(00)01803-4 ◽

2001 ◽

Vol 384 (1) ◽

pp. 146-150 ◽

Cited By ~ 33

Author(s):

Kyu-Jeong Choi ◽

Woong-Chul Shin ◽

Soon-Gil Yoon

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Organic Chemical ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Differences in epitaxial-layer/substrate interface properties of hetero-junction field effect transistors fabricated by molecular beam epitaxy and metal organic chemical vapor deposition

Solid-State Electronics ◽

10.1016/0038-1101(94)00224-4 ◽

1995 ◽

Vol 38 (6) ◽

pp. 1221-1226 ◽

Cited By ~ 4

Author(s):

K Kasahara ◽

K Kunihiro ◽

H Nishizawa ◽

Y Ohno

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Organic Chemical ◽

Interface Properties ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Improvement in the Property of Field Effect Transistor Having the HfO2/Ge Structure Fabricated by Photoassisted Metal Organic Chemical Vapor Deposition with Fluorine Treatment

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.04da11 ◽

2011 ◽

Vol 50 (4S) ◽

pp. 04DA11 ◽

Cited By ~ 2

Author(s):

DongHun Lee ◽

Hideto Imajo ◽

Takeshi Kanashima ◽

Masanori Okuyama

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Organic Chemical ◽

Metal Organic ◽

Effect Transistor ◽

Organic Chemical Vapor Deposition

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Performance and Reliability Improvement of HfSiON Field-Effect Transistor with Low Hafnium Concentration Cap Layer Formed by Metal Organic Chemical Vapor Deposition with Diethylsilane

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.879 ◽

2008 ◽

Vol 47 (2) ◽

pp. 879-884 ◽

Cited By ~ 2

Author(s):

Motoyuki Sato ◽

Yasushi Nakasaki ◽

Koji Watanabe ◽

Tomonori Aoyama ◽

Eiji Hasegawa ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Organic Chemical ◽

Reliability Improvement ◽

Metal Organic ◽

Effect Transistor ◽

Organic Chemical Vapor Deposition

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Influence of dual-frequency plasma-enhanced chemical-vapor deposition Si3N4 passivation on the electrical characteristics of AlGaN/GaN heterostructure field-effect transistors

Journal of Electronic Materials ◽

10.1007/s11664-004-0191-x ◽

2004 ◽

Vol 33 (5) ◽

pp. 400-407 ◽

Cited By ~ 22

Author(s):

W. S. Tan ◽

P. A. Houston ◽

G. Hill ◽

R. J. Airey ◽

P. J. Parbook

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Electrical Characteristics ◽

Dual Frequency ◽

Frequency Plasma ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Improvement in the Property of Field Effect Transistor Having the HfO2/Ge Structure Fabricated by Photoassisted Metal Organic Chemical Vapor Deposition with Fluorine Treatment

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.04da11 ◽

2011 ◽

Vol 50 (4) ◽

pp. 04DA11 ◽

Cited By ~ 2

Author(s):

DongHun Lee ◽

Hideto Imajo ◽

Takeshi Kanashima ◽

Masanori Okuyama

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Organic Chemical ◽

Metal Organic ◽

Effect Transistor ◽

Organic Chemical Vapor Deposition

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Effects of SiN passivation by catalytic chemical vapor deposition on electrical properties of AlGaN∕GaN heterostructure field-effect transistors

Journal of Applied Physics ◽

10.1063/1.2218759 ◽

2006 ◽

Vol 100 (3) ◽

pp. 033714 ◽

Cited By ~ 35

Author(s):

Masataka Higashiwaki ◽

Norio Onojima ◽

Toshiaki Matsui ◽

Takashi Mimura

Keyword(s):

Chemical Vapor Deposition ◽

Electrical Properties ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Catalytic Chemical Vapor Deposition ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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NiO gate GaN-based enhancement-mode hetrojunction field-effect transistor with extremely low on-resistance using metal organic chemical vapor deposition regrown Ge-doped layer

Japanese Journal of Applied Physics ◽

10.7567/jjap.55.121001 ◽

2016 ◽

Vol 55 (12) ◽

pp. 121001 ◽

Cited By ~ 11

Author(s):

Asamira Suzuki ◽

Songbeak Choe ◽

Yasuhiro Yamada ◽

Nobuyuki Otsuka ◽

Daisuke Ueda

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Organic Chemical ◽

Enhancement Mode ◽

Metal Organic ◽

Effect Transistor ◽

Organic Chemical Vapor Deposition

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