Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals

2009 ◽  
Vol 27 (4) ◽  
pp. 716-724 ◽  
Author(s):  
G. B. Rayner ◽  
S. M. George
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Nucleation And Growth ◽  
Tantalum Nitride ◽  
Layer Deposition ◽  
Hydrogen Radicals

Nucleation and Growth of Silver Nanoparticles by AB and ABC-Type Atomic Layer Deposition

2014 ◽  
Vol 118 (31) ◽  
pp. 17655-17661 ◽  
Author(s):  
Sicelo S. Masango ◽  
Lingxuan Peng ◽  
Laurence D. Marks ◽  
Richard P. Van Duyne ◽  
Peter C. Stair
Keyword(s):  
Silver Nanoparticles ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Nucleation And Growth ◽  
Layer Deposition

Nucleation and growth process of atomic layer deposition platinum nanoparticles on strontium titanate nanocuboids

2017 ◽  
Vol 28 (18) ◽  
pp. 185704 ◽  
Author(s):  
Chuandao Wang ◽  
Linhua Hu ◽  
Kenneth Poeppelmeier ◽  
Peter C Stair ◽  
Laurence Marks
Keyword(s):  
Atomic Layer Deposition ◽  
Strontium Titanate ◽  
Platinum Nanoparticles ◽  
Growth Process ◽  
Atomic Layer ◽  
Nucleation And Growth ◽  
Layer Deposition

The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum-Based Thin Films for Copper Diffusion Barrier Applications

2003 ◽  
Vol 766 ◽  
Author(s):  
Degang Cheng ◽  
Eric T. Eisenbraun
Keyword(s):  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Hydrogen Plasma ◽  
Atomic Layer ◽  
Barrier Properties ◽  
Tantalum Nitride ◽  
Copper Metallization ◽  
X Ray ◽  
Layer Deposition ◽  
Electron Spectrometry

AbstractA plasma-enhanced atomic layer deposition (PEALD) process for the growth of tantalumbased compounds is employed in integration studies for advanced copper metallization on a 200- mm wafer cluster tool platform. This process employs terbutylimido tris(diethylamido)tantalum (TBTDET) as precursor and hydrogen plasma as the reducing agent at a temperature of 250°C. Auger electron spectrometry, X-ray photoelectron spectrometry, and X-ray diffraction analyses indicate that the deposited films are carbide rich, and possess electrical resistivity as low as 250νΔcm, significantly lower than that of tantalum nitride deposited by conventional ALD or CVD using TBTDET and ammonia. PEALD Ta(C)N also possesses a strong resistance to oxidation, and possesses diffusion barrier properties superior to those of thermally grown TaN.

scholarly journals Atomic layer deposition of perovskites—Part 1: Fundamentals of nucleation and growth

2019 ◽  
Vol 2 (1) ◽  
Author(s):  
Abdulla Bin Afif ◽  
Anup L. Dadlani ◽  
Stephanie Burgmann ◽  
Peter Köllensperger ◽  
Jan Torgersen
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Nucleation And Growth ◽  
Layer Deposition

Nucleation and Growth of Noble Metals on Oxide Surfaces Using Atomic Layer Deposition

2019 ◽  
Vol 3 (15) ◽  
pp. 271-278 ◽  
Author(s):  
J. W. Elam ◽  
A. V. V. Zinovev ◽  
Michael J. Pellin ◽  
David J. Comstock ◽  
Mark C. Hersam
Keyword(s):  
Atomic Layer Deposition ◽  
Noble Metals ◽  
Atomic Layer ◽  
Nucleation And Growth ◽  
Oxide Surfaces ◽  
Layer Deposition

Understanding and Controlling Nucleation and Growth of TiO2Deposited on Multiwalled Carbon Nanotubes by Atomic Layer Deposition

2015 ◽  
Vol 119 (6) ◽  
pp. 3379-3387 ◽  
Author(s):  
Yucheng Zhang ◽  
Carlos Guerra-Nuñez ◽  
Ivo Utke ◽  
Johann Michler ◽  
Marta D. Rossell ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Atomic Layer Deposition ◽  
Multiwalled Carbon Nanotubes ◽  
Atomic Layer ◽  
Nucleation And Growth ◽  
Multiwalled Carbon ◽  
Layer Deposition

scholarly journals Nucleation and growth of ZnO on PMMA by low-temperature atomic layer deposition

2015 ◽  
Vol 33 (1) ◽  
pp. 01A128 ◽  
Author(s):  
Mari Napari ◽  
Jari Malm ◽  
Roope Lehto ◽  
Jaakko Julin ◽  
Kai Arstila ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Nucleation And Growth ◽  
Layer Deposition
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