Understanding and Controlling Nucleation and Growth of TiO2Deposited on Multiwalled Carbon Nanotubes by Atomic Layer Deposition

2015 ◽  
Vol 119 (6) ◽  
pp. 3379-3387 ◽  
Author(s):  
Yucheng Zhang ◽  
Carlos Guerra-Nuñez ◽  
Ivo Utke ◽  
Johann Michler ◽  
Marta D. Rossell ◽  
...  
2007 ◽  
Vol 1054 ◽  
Author(s):  
Andrew S. Cavanagh ◽  
Christopher A. Wilson ◽  
Alan W. Weimer ◽  
Steven M. George

ABSTRACTAtomic layer deposition (ALD) was performed on quantities of multiwalled carbon nanotubes (MWCNTs) in a rotary reactor. Because of nucleation difficulties, Al2O3 ALD grew as nanospheres on the MWCNTs. After a NO2 nucleation treatment, Al2O3 ALD films grew conformally and noncovalently functionalized the surface of the MWCNT. This Al2O3 ALD film served as a platform for the growth of W ALD metal. The uncoated and ALD-coated MWCNTs were characterized with transmission electron microscopy and x-ray photoelectron spectroscopy. This study demonstrates that ALD can be performed on quantities of very high surface area MWCNT substrates.


2011 ◽  
Vol 158 (2) ◽  
pp. K24 ◽  
Author(s):  
Yu-Hung Lin ◽  
Po-Sheng Lee ◽  
Yang-Chih Hsueh ◽  
Ko-Ying Pan ◽  
Chi-Chung Kei ◽  
...  

Nanomaterials ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 252 ◽  
Author(s):  
László Péter Bakos ◽  
Nóra Justh ◽  
Ulisses Carlo Moura da Silva Bezerra da Costa ◽  
Krisztina László ◽  
János László Lábár ◽  
...  

TiO2 and ZnO single and multilayers were deposited on hydroxyl functionalized multi-walled carbon nanotubes using atomic layer deposition. The bare carbon nanotubes and the resulting heterostructures were characterized by TG/DTA, Raman, XRD, SEM-EDX, XPS, TEM-EELS-SAED and low temperature nitrogen adsorption techniques, and their photocatalytic and gas sensing activities were also studied. The carbon nanotubes (CNTs) were uniformly covered with anatase TiO2 and wurtzite ZnO layers and with their combinations. In the photocatalytic degradation of methyl orange, the most beneficial structures are those where ZnO is the external layer, both in the case of single and double oxide layer covered CNTs (CNT-ZnO and CNT-TiO2-ZnO). The samples with multilayer oxides (CNT-ZnO-TiO2 and CNT-TiO2-ZnO) have lower catalytic activity due to their larger average densities, and consequently lower surface areas, compared to single oxide layer coated CNTs (CNT-ZnO and CNT-TiO2). In contrast, in gas sensing it is advantageous to have TiO2 as the outer layer. Since ZnO has higher conductivity, its gas sensing signals are lower when reacting with NH3 gas. The double oxide layer samples have higher resistivity, and hence a larger gas sensing response than their single oxide layer counterparts.


2014 ◽  
Vol 118 (31) ◽  
pp. 17655-17661 ◽  
Author(s):  
Sicelo S. Masango ◽  
Lingxuan Peng ◽  
Laurence D. Marks ◽  
Richard P. Van Duyne ◽  
Peter C. Stair

2016 ◽  
Vol 27 (40) ◽  
pp. 405702 ◽  
Author(s):  
Sheng-Hsin Huang ◽  
Shih-Yun Liao ◽  
Chih-Chieh Wang ◽  
Chi-Chung Kei ◽  
Jon-Yiew Gan ◽  
...  

2019 ◽  
Vol 16 (2) ◽  
pp. 855-862 ◽  
Author(s):  
Yang-Chih Hsueh ◽  
Chia-Te Hu ◽  
Chih-Chieh Wang ◽  
Chueh Liu ◽  
Tsong-Pyng Perng

2017 ◽  
Vol 28 (18) ◽  
pp. 185704 ◽  
Author(s):  
Chuandao Wang ◽  
Linhua Hu ◽  
Kenneth Poeppelmeier ◽  
Peter C Stair ◽  
Laurence Marks

Author(s):  
Abdulla Bin Afif ◽  
Anup L. Dadlani ◽  
Stephanie Burgmann ◽  
Peter Köllensperger ◽  
Jan Torgersen

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1085 ◽  
Author(s):  
Kemelbay ◽  
Tikhonov ◽  
Aloni ◽  
Kuykendall

As one of the highest mobility semiconductor materials, carbon nanotubes (CNTs) have been extensively studied for use in field effect transistors (FETs). To fabricate surround-gate FETs— which offer the best switching performance—deposition of conformal, weakly-interacting dielectric layers is necessary. This is challenging due to the chemically inert surface of CNTs and a lack of nucleation sites—especially for defect-free CNTs. As a result, a technique that enables integration of uniform high-k dielectrics, while preserving the CNT’s exceptional properties is required. In this work, we show a method that enables conformal atomic layer deposition (ALD) of high-k dielectrics on defect-free CNTs. By depositing a thin Ti metal film, followed by oxidation to TiO2 under ambient conditions, a nucleation layer is formed for subsequent ALD deposition of Al2O3. The technique is easy to implement and is VLSI-compatible. We show that the ALD coatings are uniform, continuous and conformal, and Raman spectroscopy reveals that the technique does not induce defects in the CNT. The resulting bilayer TiO2/Al2O3 thin-film shows an improved dielectric constant of 21.7 and an equivalent oxide thickness of 2.7 nm. The electrical properties of back-gated and top-gated devices fabricated using this method are presented.


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