Tantalum Nitride Atomic Layer Deposition Using (tert-Butylimido)tris(diethylamido)tantalum and Hydrazine

2008 ◽  
Vol 155 (7) ◽  
pp. D508 ◽  
Author(s):  
B. B. Burton ◽  
A. R. Lavoie ◽  
S. M. George
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Tantalum Nitride ◽  
Layer Deposition

The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum-Based Thin Films for Copper Diffusion Barrier Applications

2003 ◽  
Vol 766 ◽  
Author(s):  
Degang Cheng ◽  
Eric T. Eisenbraun
Keyword(s):  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Hydrogen Plasma ◽  
Atomic Layer ◽  
Barrier Properties ◽  
Tantalum Nitride ◽  
Copper Metallization ◽  
X Ray ◽  
Layer Deposition ◽  
Electron Spectrometry

AbstractA plasma-enhanced atomic layer deposition (PEALD) process for the growth of tantalumbased compounds is employed in integration studies for advanced copper metallization on a 200- mm wafer cluster tool platform. This process employs terbutylimido tris(diethylamido)tantalum (TBTDET) as precursor and hydrogen plasma as the reducing agent at a temperature of 250°C. Auger electron spectrometry, X-ray photoelectron spectrometry, and X-ray diffraction analyses indicate that the deposited films are carbide rich, and possess electrical resistivity as low as 250νΔcm, significantly lower than that of tantalum nitride deposited by conventional ALD or CVD using TBTDET and ammonia. PEALD Ta(C)N also possesses a strong resistance to oxidation, and possesses diffusion barrier properties superior to those of thermally grown TaN.

Atomic layer deposition of tantalum nitride based thin films from cyclopentadienyl type precursor

2010 ◽  
Vol 519 (1) ◽  
pp. 367-372 ◽  
Author(s):  
A. Correia Anacleto ◽  
A. Zauner ◽  
D. Cany-Canian ◽  
J. Gatineau ◽  
M.-C. Hugon
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Tantalum Nitride ◽  
Layer Deposition

scholarly journals Tantalum nitride films integrated with transparent conductive oxide substrates via atomic layer deposition for photoelectrochemical water splitting

2016 ◽  
Vol 7 (11) ◽  
pp. 6760-6767 ◽  
Author(s):  
Hamed Hajibabaei ◽  
Omid Zandi ◽  
Thomas W. Hamann
Keyword(s):  
Atomic Layer Deposition ◽  
Water Splitting ◽  
Atomic Layer ◽  
Transparent Conductive Oxide ◽  
Photoelectrochemical Water Splitting ◽  
Tantalum Nitride ◽  
Solar Water Splitting ◽  
Layer Deposition ◽  
Oxide Substrates ◽  
Conductive Oxide

The first example of tantalum nitride electrodes on transparent conductive oxide substrates, which enables solar water splitting, is presented.

Atomic Layer Deposition of Tantalum Nitride on Organosilicate and Organic Polymerbased Low Dielectric Constant Materials

2004 ◽  
Vol 812 ◽  
Author(s):  
Oscar van der Straten ◽  
Yu Zhu ◽  
Jonathan Rullan ◽  
Katarzyna Topol ◽  
Kathleen Dunn ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Tantalum Nitride ◽  
Experimental Methodology ◽  
Low Dielectric Constant ◽  
Adhesion Properties ◽  
Low Dielectric ◽  
Layer Deposition ◽  
Low K

AbstractA previously developed metal-organic atomic layer deposition (ALD) tantalum nitride (TaNx) process was employed to investigate the growth of TaNx liners on low dielectric constant (low-k) materials for liner applications in advanced Cu/low-k interconnect metallization schemes. ALD of TaNx was performed at a substrate temperature of 250°C by alternately exposing low-k materials to tertbutylimido-tris(diethylamido)tantalum (TBTDET) and ammonia (NH3), separated by argon purge steps. The dependence of TaNx film thickness on the number of ALD cycles performed on both organosilicate and organic polymer-based low-k materials was determined and compared to baseline growth characteristics of ALD TaNx on SiO2. In order to assess the effect of the deposition of TaNx on surface roughness, atomic force microscopy (AFM) measurements were carried out prior to and after the deposition of TaNx on the low-k materials. The stability of the interface between TaNx and the low-k materials after thermal annealing at 350°C for 30 minutes was studied by examining interfacial roughness profiles using cross-sectional imaging in a high-resolution transmission electron microscope (HR-TEM). The wetting and adhesion properties of Cu/low-k were quantified using a solid-state wetting experimental methodology after integration of ALD TaNx liners with Cu and low-k dielectrics.

Impact of silica-substrate chemistry on tantalum nitride thin films deposited by atomic layer deposition: Microstructure, chemistry and electrical behaviors

2019 ◽  
Vol 669 ◽  
pp. 392-398
Author(s):  
Fabien Volpi ◽  
Lionel Cadix ◽  
Gregory Berthomé ◽  
Stéphane Coindeau ◽  
Thierry Encinas ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Tantalum Nitride ◽  
Silica Substrate ◽  
Layer Deposition
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