Application of plasma enhanced chemical vapor deposition silicon oxynitride layers in nonvolatile semiconductor memory devices

2009 ◽  
Vol 27 (1) ◽  
pp. 494 ◽  
Author(s):  
Robert Mroczyński ◽  
Romuald B. Beck
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Memory Devices ◽  
Semiconductor Memory ◽  
Nonvolatile Semiconductor Memory

scholarly journals High Performance Multilayered Organosilicon/Silicon Oxynitride Water Barrier Structure Consecutively Deposited by Plasma-Enhanced Chemical Vapor Deposition at a Low-Temperature

Coatings ◽  
2019 ◽  
Vol 10 (1) ◽  
pp. 11
Author(s):  
Ren-Da Fu ◽  
Che Kai Chang ◽  
Ming-Yueh Chuang ◽  
Tai-Hong Chen ◽  
Shao-Kai Lu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Water Vapor ◽  
Low Temperature ◽  
Vapor Deposition ◽  
High Performance ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Barrier Structure ◽  
Organic Light Emitting Diode

In this study, pairs of the organosilicon/silicon oxynitride (SiOxNy) barrier structures with an ultralow water vapor transmittance rate (WVTR) were consecutively prepared by the plasma-enhanced chemical vapor deposition at a low temperature of 70 °C using the tetramethylsilane (TMS) monomer and the TMS-oxygen-ammonia gas mixture, respectively. The thickness of the SiOxNy film in the barrier structure was firstly designed by optimizing its effective permeability. The WVTR was further decreased by inserting an adequate thickness of the organosilicon layer as the stress residing in the barrier structure was released accordingly. By prolonging the diffusion pathway for water vapor permeation, three-paired organosilicon/SiOxNy multilayered barrier structure with a WVTR of about 10−5 g/m2/day was achievable for meeting the requirement of the thin film encapsulation on the organic light emitting diode.

Photoluminescence Characteristics of Silicon Oxynitride Films at Different Annealing Temperatures

2010 ◽  
Vol 663-665 ◽  
pp. 336-339
Author(s):  
Jie Song ◽  
Yan Qing Guo ◽  
Xiang Wang ◽  
Yi Xiong Zhang ◽  
Chao Song ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Frequency ◽  
Annealing Temperature ◽  
Chemical Vapor ◽  
Maximum Intensity ◽  
Silicon Oxynitride ◽  
Very High Frequency ◽  
Annealing Temperatures ◽  
Very High

Silicon oxynitride films were deposited in very-high-frequency (40.68 MHz) plasma enhanced chemical vapor deposition (VHF-PECVD), and subsequently annealed between 400 and 1200°C in N2 ambient. The effect of annealing temperature on the PL characteristics of the samples was investigated. The experimental results reveal that a broad PL peak around 430 nm (2.88eV) appears in all of the samples. The maximum intensity of this broad PL peak was obtained in the sample annealed at 400°C. The PL characteristics of the annealed samples were discussed.

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