InAlN∕GaN metal-oxide-semiconductor high electron mobility transistor with Al[sub 2]O[sub 3] insulating films grown by metal organic chemical vapor deposition using Ar and NH[sub 3] carrier gases

K. Čičo; J. Kuzmík; J. Liday; K. Hušeková; G. Pozzovivo; J.-F. Carlin; N. Grandjean; D. Pogany; P. Vogrinčič; K. Fröhlich

doi:10.1116/1.3021034

InAlN∕GaN metal-oxide-semiconductor high electron mobility transistor with Al[sub 2]O[sub 3] insulating films grown by metal organic chemical vapor deposition using Ar and NH[sub 3] carrier gases

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3021034 ◽

2009 ◽

Vol 27 (1) ◽

pp. 218 ◽

Cited By ~ 9

Author(s):

K. Čičo ◽

J. Kuzmík ◽

J. Liday ◽

K. Hušeková ◽

G. Pozzovivo ◽

...

Keyword(s):

Chemical Vapor ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Organic Chemical ◽

High Electron ◽

Insulating Films ◽

Metal Organic ◽

Carrier Gases ◽

Organic Chemical Vapor Deposition

Download Full-text

Mass production-ready characteristics of AlGaN/AlN/GaN high-electron-mobility transistor structures grown on 200 mm diameter silicon substrates using metal-organic chemical vapor deposition

Semiconductor Science and Technology ◽

10.1088/1361-6641/abc3da ◽

2020 ◽

Vol 36 (1) ◽

pp. 014004

Author(s):

Keitaro Ikejiri ◽

Yuichi Hiroyama ◽

Kenji Kasahara ◽

Chihiro Hirooka ◽

Takenori Osada ◽

...

Keyword(s):

Vapor Deposition ◽

Mass Production ◽

Chemical Vapor ◽

High Electron Mobility Transistor ◽

Organic Chemical ◽

Silicon Substrates ◽

High Electron ◽

High Electron Mobility ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

Download Full-text

$\hbox{In}_{0.5}\hbox{Ga}_{0.5}\hbox{As}$-Based Metal–Oxide–Semiconductor Capacitor on GaAs Substrate Using Metal–Organic Chemical Vapor Deposition

IEEE Transactions on Electron Devices ◽

10.1109/ted.2012.2228201 ◽

2013 ◽

Vol 60 (1) ◽

pp. 235-240 ◽

Cited By ~ 6

Author(s):

H. Q. Nguyen ◽

H. D. Trinh ◽

E. Y. Chang ◽

C. T. Lee ◽

Shin Yuan Wang ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Gaas Substrate ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Organic Chemical ◽

Metal Organic ◽

Organic Chemical Vapor Deposition ◽

Metal Oxide Semiconductor Capacitor

Download Full-text

The δ-Doped In0.25Ga0.75As/GaAs Pseudomorphic High Electron Mobility Transistor Structures Prepared by Low-Pressure Metal Organic Chemical Vapor Deposition*

Japanese Journal of Applied Physics ◽

10.1143/jjap.30.1158 ◽

1991 ◽

Vol 30 (Part 1, No. 6) ◽

pp. 1158-1163 ◽

Cited By ~ 22

Author(s):

C. Y. Chang ◽

W. Lin ◽

W. C. Hsu ◽

T. S. Wu ◽

S. Z. Chang ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Electron Mobility ◽

Chemical Vapor ◽

High Electron Mobility Transistor ◽

Organic Chemical ◽

High Electron ◽

High Electron Mobility ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

Download Full-text

Optical Investigation of Proton‐Irradiated Metal Organic Chemical Vapor Deposition AlGaN/GaN High‐Electron‐Mobility Transistor Structures

physica status solidi (b) ◽

10.1002/pssb.201900573 ◽

2020 ◽

Vol 257 (4) ◽

pp. 1900573

Author(s):

Jaime A. Freitas ◽

Bradley D. Weaver ◽

Andrew D. Koehler ◽

James C. Gallagher ◽

Travis J. Anderson

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

High Electron Mobility Transistor ◽

Organic Chemical ◽

Optical Investigation ◽

High Electron ◽

High Electron Mobility ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

Download Full-text

Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition

Thin Solid Films ◽

10.1016/j.tsf.2014.05.045 ◽

2014 ◽

Vol 564 ◽

pp. 135-139 ◽

Cited By ~ 17

Author(s):

X.G. He ◽

D.G. Zhao ◽

D.S. Jiang ◽

Z.S. Liu ◽

P. Chen ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

High Electron Mobility Transistor ◽

Organic Chemical ◽

Residual Carbon ◽

High Electron ◽

High Electron Mobility ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

Download Full-text

InGaN channel high electron mobility transistor structures grown by metal organic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.3697415 ◽

2012 ◽

Vol 100 (12) ◽

pp. 121909 ◽

Cited By ~ 37

Author(s):

O. Laboutin ◽

Y. Cao ◽

W. Johnson ◽

R. Wang ◽

G. Li ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Electron Mobility ◽

Chemical Vapor ◽

High Electron Mobility Transistor ◽

Organic Chemical ◽

High Electron ◽

High Electron Mobility ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

Download Full-text

High channel mobility 4H-SiC metal-oxide-semiconductor field-effect transistor with low temperature metal-organic chemical-vapor deposition grown Al2O3 gate insulator

Applied Physics Letters ◽

10.1063/1.2903103 ◽

2008 ◽

Vol 92 (18) ◽

pp. 183503 ◽

Cited By ~ 24

Author(s):

S. Hino ◽

T. Hatayama ◽

J. Kato ◽

E. Tokumitsu ◽

N. Miura ◽

...

Keyword(s):

Field Effect Transistor ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Gate Insulator ◽

Oxide Semiconductor ◽

Organic Chemical ◽

Channel Mobility ◽

Metal Organic ◽

Effect Transistor ◽

Organic Chemical Vapor Deposition

Download Full-text

Nitride passivation reduces interfacial traps in atomic-layer-deposited Al2O3/GaAs (001) metal-oxide-semiconductor capacitors using atmospheric metal-organic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.4891431 ◽

2014 ◽

Vol 105 (3) ◽

pp. 033513 ◽

Cited By ~ 27

Author(s):

T. Aoki ◽

N. Fukuhara ◽

T. Osada ◽

H. Sazawa ◽

M. Hata ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Organic Chemical ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

Download Full-text

AlGaAs∕GaAs high-electron mobility transistor with In[sub 0.1]Ga[sub 0.9]As∕In[sub 0.22]Ga[sub 0.78]As∕In[sub 0.1]Ga[sub 0.9]As channel grown by metal-organic chemical vapor deposition

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3093883 ◽

2009 ◽

Vol 27 (2) ◽

pp. 606 ◽

Cited By ~ 2

Author(s):

Yu-Shyan Lin ◽

Bo-Yuan Chen

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Electron Mobility ◽

Chemical Vapor ◽

High Electron Mobility Transistor ◽

Organic Chemical ◽

High Electron ◽

High Electron Mobility ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

Download Full-text

High-Frequency AlGaN/GaN High-Electron-Mobility Transistors with Regrown Ohmic Contacts by Metal-Organic Chemical Vapor Deposition

Chinese Physics Letters ◽

10.1088/0256-307x/32/11/118501 ◽

2015 ◽

Vol 32 (11) ◽

pp. 118501

Author(s):

Hong-Yu Guo ◽

Yuan-Jie Lv ◽

Guo-Dong Gu ◽

Shao-Bo Dun ◽

Yu-Long Fang ◽

...

Keyword(s):

Vapor Deposition ◽

High Frequency ◽

Ohmic Contacts ◽

Chemical Vapor ◽

High Electron Mobility Transistors ◽

Organic Chemical ◽

High Electron ◽

Electron Mobility Transistors ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

Download Full-text