High channel mobility 4H-SiC metal-oxide-semiconductor field-effect transistor with low temperature metal-organic chemical-vapor deposition grown Al2O3 gate insulator

S. Hino; T. Hatayama; J. Kato; E. Tokumitsu; N. Miura; T. Oomori

doi:10.1063/1.2903103

High channel mobility 4H-SiC metal-oxide-semiconductor field-effect transistor with low temperature metal-organic chemical-vapor deposition grown Al2O3 gate insulator

Applied Physics Letters ◽

10.1063/1.2903103 ◽

2008 ◽

Vol 92 (18) ◽

pp. 183503 ◽

Cited By ~ 24

Author(s):

S. Hino ◽

T. Hatayama ◽

J. Kato ◽

E. Tokumitsu ◽

N. Miura ◽

...

Keyword(s):

Field Effect Transistor ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Gate Insulator ◽

Oxide Semiconductor ◽

Organic Chemical ◽

Channel Mobility ◽

Metal Organic ◽

Effect Transistor ◽

Organic Chemical Vapor Deposition

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A low-leakage and reduced current collapse AlGaN/GaN heterojunction field effect transistor with AlOx gate insulator formed by metal-organic chemical vapor deposition

physica status solidi (c) ◽

10.1002/pssc.200778652 ◽

2008 ◽

Vol 5 (6) ◽

pp. 1986-1988 ◽

Cited By ~ 3

Author(s):

H. Sazawa ◽

N. Nishikawa ◽

Y. Honda ◽

M. Hata ◽

S. Yagi ◽

...

Keyword(s):

Vapor Deposition ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Gate Insulator ◽

Organic Chemical ◽

Low Leakage ◽

Current Collapse ◽

Metal Organic ◽

Effect Transistor ◽

Organic Chemical Vapor Deposition

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$\hbox{In}_{0.5}\hbox{Ga}_{0.5}\hbox{As}$-Based Metal–Oxide–Semiconductor Capacitor on GaAs Substrate Using Metal–Organic Chemical Vapor Deposition

IEEE Transactions on Electron Devices ◽

10.1109/ted.2012.2228201 ◽

2013 ◽

Vol 60 (1) ◽

pp. 235-240 ◽

Cited By ~ 6

Author(s):

H. Q. Nguyen ◽

H. D. Trinh ◽

E. Y. Chang ◽

C. T. Lee ◽

Shin Yuan Wang ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Gaas Substrate ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Organic Chemical ◽

Metal Organic ◽

Organic Chemical Vapor Deposition ◽

Metal Oxide Semiconductor Capacitor

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Improvement in the Property of Field Effect Transistor Having the HfO2/Ge Structure Fabricated by Photoassisted Metal Organic Chemical Vapor Deposition with Fluorine Treatment

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.04da11 ◽

2011 ◽

Vol 50 (4S) ◽

pp. 04DA11 ◽

Cited By ~ 2

Author(s):

DongHun Lee ◽

Hideto Imajo ◽

Takeshi Kanashima ◽

Masanori Okuyama

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Organic Chemical ◽

Metal Organic ◽

Effect Transistor ◽

Organic Chemical Vapor Deposition

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Performance and Reliability Improvement of HfSiON Field-Effect Transistor with Low Hafnium Concentration Cap Layer Formed by Metal Organic Chemical Vapor Deposition with Diethylsilane

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.879 ◽

2008 ◽

Vol 47 (2) ◽

pp. 879-884 ◽

Cited By ~ 2

Author(s):

Motoyuki Sato ◽

Yasushi Nakasaki ◽

Koji Watanabe ◽

Tomonori Aoyama ◽

Eiji Hasegawa ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Organic Chemical ◽

Reliability Improvement ◽

Metal Organic ◽

Effect Transistor ◽

Organic Chemical Vapor Deposition

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Improvement in the Property of Field Effect Transistor Having the HfO2/Ge Structure Fabricated by Photoassisted Metal Organic Chemical Vapor Deposition with Fluorine Treatment

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.04da11 ◽

2011 ◽

Vol 50 (4) ◽

pp. 04DA11 ◽

Cited By ~ 2

Author(s):

DongHun Lee ◽

Hideto Imajo ◽

Takeshi Kanashima ◽

Masanori Okuyama

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Organic Chemical ◽

Metal Organic ◽

Effect Transistor ◽

Organic Chemical Vapor Deposition

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NiO gate GaN-based enhancement-mode hetrojunction field-effect transistor with extremely low on-resistance using metal organic chemical vapor deposition regrown Ge-doped layer

Japanese Journal of Applied Physics ◽

10.7567/jjap.55.121001 ◽

2016 ◽

Vol 55 (12) ◽

pp. 121001 ◽

Cited By ~ 11

Author(s):

Asamira Suzuki ◽

Songbeak Choe ◽

Yasuhiro Yamada ◽

Nobuyuki Otsuka ◽

Daisuke Ueda

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Organic Chemical ◽

Enhancement Mode ◽

Metal Organic ◽

Effect Transistor ◽

Organic Chemical Vapor Deposition

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High Integrity SiO$_{2}$ Gate Insulator Formed by Microwave-Excited Plasma Enhanced Chemical Vapor Deposition for AlGaN/GaN Hybrid Metal–Oxide–Semiconductor Heterojunction Field-Effect Transistor on Si Substrate

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.04df03 ◽

2012 ◽

Vol 51 ◽

pp. 04DF03 ◽

Cited By ~ 7

Author(s):

Hiroshi Kambayashi ◽

Takehiko Nomura ◽

Sadahiro Kato ◽

Hirokazu Ueda ◽

Akinobu Teramoto ◽

...

Keyword(s):

Vapor Deposition ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Metal Oxide Semiconductor ◽

Gate Insulator ◽

Oxide Semiconductor ◽

Si Substrate ◽

Effect Transistor ◽

High Integrity ◽

Hybrid Metal Oxide

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InAlN∕GaN metal-oxide-semiconductor high electron mobility transistor with Al[sub 2]O[sub 3] insulating films grown by metal organic chemical vapor deposition using Ar and NH[sub 3] carrier gases

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3021034 ◽

2009 ◽

Vol 27 (1) ◽

pp. 218 ◽

Cited By ~ 9

Author(s):

K. Čičo ◽

J. Kuzmík ◽

J. Liday ◽

K. Hušeková ◽

G. Pozzovivo ◽

...

Keyword(s):

Chemical Vapor ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Organic Chemical ◽

High Electron ◽

Insulating Films ◽

Metal Organic ◽

Carrier Gases ◽

Organic Chemical Vapor Deposition

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Nitride passivation reduces interfacial traps in atomic-layer-deposited Al2O3/GaAs (001) metal-oxide-semiconductor capacitors using atmospheric metal-organic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.4891431 ◽

2014 ◽

Vol 105 (3) ◽

pp. 033513 ◽

Cited By ~ 27

Author(s):

T. Aoki ◽

N. Fukuhara ◽

T. Osada ◽

H. Sazawa ◽

M. Hata ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Metal Oxide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Organic Chemical ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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A GaAs Floated Electron Channel Field Effect Transistor (FECFET) Fabricated by Selective Metal Organic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.30.3828 ◽

1991 ◽

Vol 30 (Part 1, No. 12B) ◽

pp. 3828-3832 ◽

Cited By ~ 5

Author(s):

Chang-Tae Kim ◽

Chang-Hee Hong ◽

Young-Se Kwon

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Field Effect ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Organic Chemical ◽

Electron Channel ◽

Metal Organic ◽

Effect Transistor ◽

Organic Chemical Vapor Deposition

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