AlGaAs∕GaAs high-electron mobility transistor with In[sub 0.1]Ga[sub 0.9]As∕In[sub 0.22]Ga[sub 0.78]As∕In[sub 0.1]Ga[sub 0.9]As channel grown by metal-organic chemical vapor deposition

2009 ◽  
Vol 27 (2) ◽  
pp. 606 ◽  
Author(s):  
Yu-Shyan Lin ◽  
Bo-Yuan Chen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Electron Mobility ◽  
Chemical Vapor ◽  
High Electron Mobility Transistor ◽  
Organic Chemical ◽  
High Electron ◽  
High Electron Mobility ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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