Nitride passivation reduces interfacial traps in atomic-layer-deposited Al2O3/GaAs (001) metal-oxide-semiconductor capacitors using atmospheric metal-organic chemical vapor deposition

2014 ◽  
Vol 105 (3) ◽  
pp. 033513 ◽  
Author(s):  
T. Aoki ◽  
N. Fukuhara ◽  
T. Osada ◽  
H. Sazawa ◽  
M. Hata ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Metal Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Electrical Properties of Ultrathin Al2O3 Films Grown by Metalorganic Chemical Vapor Deposition for Advanced Complementary Metal-oxide Semiconductor Gate Dielectric Applications

2005 ◽  
Vol 20 (6) ◽  
pp. 1536-1543 ◽  
Author(s):  
Spyridon Skordas ◽  
Filippos Papadatos ◽  
Steven Consiglio ◽  
Eric T. Eisenbraun ◽  
Alain E. Kaloyeros ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Metal Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Silicon Oxynitride ◽  
Oxide Semiconductor ◽  
Organic Chemical

The electrical properties of ultrathin amorphous Al2O3 films, grown by low temperature metal-organic chemical vapor deposition from aluminum(III) 2,4-pentanedionate and water as co-reactants, were examined for potential applications as gate dielectrics in emerging complementary metal-oxide semiconductor technologies. High-frequency capacitance–voltage and current–voltage techniques were used to evaluate Al2O3 films deposited on silicon oxynitride on n-type silicon (100) substrates, with thickness ranging from 2.5 to 6.5 nm, as a function of postdeposition annealing regimes. Dielectric constant values ranging from 11.0 to11.5 were obtained, depending on the annealing method used. Metal-insulator-semiconductor devices were demonstrated with net equivalent oxide thickness values of 1.3 nm. Significant charge traps were detected in the as-deposited films and were mostly passivated by the subsequent annealing treatment. The main charge injection mechanism in the dielectric layer was found to follow a Poole–Frenkel behavior, with post-annealed films exhibiting leakage current an order of magnitude lower than that of equivalent silicon oxide films.

Metal-Organic Chemical Vapor Deposition of Metal Oxide Films and Nanostructures

2012 ◽  
pp. 291-336 ◽  
Author(s):  
Sanjay Mathur ◽  
Aadesh Pratap Singh ◽  
Ralf Müller ◽  
Tessa Leuning ◽  
Thomas Lehnen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Metal Oxide ◽  
Vapor Deposition ◽  
Oxide Films ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Oxide Films ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Electrical and Optical Characteristics of Two-Dimensional MoS2 Film Grown by Metal-Organic Chemical Vapor Deposition

2020 ◽  
Vol 20 (6) ◽  
pp. 3563-3567 ◽  
Author(s):  
Donghwan Kim ◽  
Yonghee Jo ◽  
Dae Hyun Jung ◽  
Jae Suk Lee ◽  
TaeWan Kim
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Layer Structure ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Surface Element ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Atomically thin molybdenum disulfide (MoS2) films were synthesized on a SiO2/Si substrate by metal-organic chemical vapor deposition (MOCVD). Raman spectroscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy studies reveal the double-atomic-layer structure and the surface element composition of the MOCVD-grown MoS2 films. The photoluminescence measurement demonstrates a strong emission peak with a bandgap of 685.1 nm, attributed to highly efficient radiative transition at the double atomic layer. The contact resistance between the doubleatomic-layer MoS2 film and metal electrode was measured using the transmission-line modeling method. A Ti/Au electrode forms an ohmic contact with the double-atomic-layer MOCVD-grown MoS2 film, exhibiting a resistivity of 100 kΩ. The field-effect transistor based on the double-atomiclayer MoS2 film exhibits an electron mobility of 1.3×10−4 cm2/V·s and an on/off ratio of 6.5×102 at room temperature.

Metal-Organic Chemical Vapor Deposition of Metal Oxide Films and Nanostructures

2014 ◽  
pp. 291-336 ◽  
Author(s):  
Sanjay Mathur ◽  
Aadesh Pratap Singh ◽  
Ralf Müller ◽  
Tessa Leuning ◽  
Thomas Lehnen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Metal Oxide ◽  
Vapor Deposition ◽  
Oxide Films ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Oxide Films ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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