Optical Investigation of Proton‐Irradiated Metal Organic Chemical Vapor Deposition AlGaN/GaN High‐Electron‐Mobility Transistor Structures

Jaime A. Freitas; Bradley D. Weaver; Andrew D. Koehler; James C. Gallagher; Travis J. Anderson

doi:10.1002/pssb.201900573

Optical Investigation of Proton‐Irradiated Metal Organic Chemical Vapor Deposition AlGaN/GaN High‐Electron‐Mobility Transistor Structures

physica status solidi (b) ◽

10.1002/pssb.201900573 ◽

2020 ◽

Vol 257 (4) ◽

pp. 1900573

Author(s):

Jaime A. Freitas ◽

Bradley D. Weaver ◽

Andrew D. Koehler ◽

James C. Gallagher ◽

Travis J. Anderson

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

High Electron Mobility Transistor ◽

Organic Chemical ◽

Optical Investigation ◽

High Electron ◽

High Electron Mobility ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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The δ-Doped In0.25Ga0.75As/GaAs Pseudomorphic High Electron Mobility Transistor Structures Prepared by Low-Pressure Metal Organic Chemical Vapor Deposition*

Japanese Journal of Applied Physics ◽

10.1143/jjap.30.1158 ◽

1991 ◽

Vol 30 (Part 1, No. 6) ◽

pp. 1158-1163 ◽

Cited By ~ 22

Author(s):

C. Y. Chang ◽

W. Lin ◽

W. C. Hsu ◽

T. S. Wu ◽

S. Z. Chang ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Electron Mobility ◽

Chemical Vapor ◽

High Electron Mobility Transistor ◽

Organic Chemical ◽

High Electron ◽

High Electron Mobility ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition

Thin Solid Films ◽

10.1016/j.tsf.2014.05.045 ◽

2014 ◽

Vol 564 ◽

pp. 135-139 ◽

Cited By ~ 17

Author(s):

X.G. He ◽

D.G. Zhao ◽

D.S. Jiang ◽

Z.S. Liu ◽

P. Chen ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

High Electron Mobility Transistor ◽

Organic Chemical ◽

Residual Carbon ◽

High Electron ◽

High Electron Mobility ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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InGaN channel high electron mobility transistor structures grown by metal organic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.3697415 ◽

2012 ◽

Vol 100 (12) ◽

pp. 121909 ◽

Cited By ~ 37

Author(s):

O. Laboutin ◽

Y. Cao ◽

W. Johnson ◽

R. Wang ◽

G. Li ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Electron Mobility ◽

Chemical Vapor ◽

High Electron Mobility Transistor ◽

Organic Chemical ◽

High Electron ◽

High Electron Mobility ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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AlGaAs∕GaAs high-electron mobility transistor with In[sub 0.1]Ga[sub 0.9]As∕In[sub 0.22]Ga[sub 0.78]As∕In[sub 0.1]Ga[sub 0.9]As channel grown by metal-organic chemical vapor deposition

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3093883 ◽

2009 ◽

Vol 27 (2) ◽

pp. 606 ◽

Cited By ~ 2

Author(s):

Yu-Shyan Lin ◽

Bo-Yuan Chen

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Electron Mobility ◽

Chemical Vapor ◽

High Electron Mobility Transistor ◽

Organic Chemical ◽

High Electron ◽

High Electron Mobility ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Mass production-ready characteristics of AlGaN/AlN/GaN high-electron-mobility transistor structures grown on 200 mm diameter silicon substrates using metal-organic chemical vapor deposition

Semiconductor Science and Technology ◽

10.1088/1361-6641/abc3da ◽

2020 ◽

Vol 36 (1) ◽

pp. 014004

Author(s):

Keitaro Ikejiri ◽

Yuichi Hiroyama ◽

Kenji Kasahara ◽

Chihiro Hirooka ◽

Takenori Osada ◽

...

Keyword(s):

Vapor Deposition ◽

Mass Production ◽

Chemical Vapor ◽

High Electron Mobility Transistor ◽

Organic Chemical ◽

Silicon Substrates ◽

High Electron ◽

High Electron Mobility ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Pseudomorphic high electron mobility heterostructures with extremely high conductivity using Te asn‐type dopant by low‐pressure metal organic chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.355858 ◽

1994 ◽

Vol 75 (1) ◽

pp. 357-361 ◽

Cited By ~ 8

Author(s):

M. Blumina ◽

I. O. Lelong ◽

R. Sarfaty ◽

D. Fekete

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Electron Mobility ◽

Chemical Vapor ◽

High Conductivity ◽

Organic Chemical ◽

High Electron ◽

High Electron Mobility ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Ultrathin barrier AlN/GaN high electron mobility transistors grown at a dramatically reduced growth temperature by pulsed metal organic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.4927743 ◽

2015 ◽

Vol 107 (4) ◽

pp. 043503 ◽

Cited By ~ 4

Author(s):

JunShuai Xue ◽

JinCheng Zhang ◽

Yue Hao

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

High Electron Mobility Transistors ◽

Organic Chemical ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Mobility and charge density tuning in double δ-doped pseudomorphic high-electron-mobility transistors grown by metal organic chemical vapor deposition

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2362783 ◽

2006 ◽

Vol 24 (6) ◽

pp. 2597 ◽

Cited By ~ 6

Author(s):

Chong-Yi Lee ◽

Hung-Pin Shiao ◽

Kuan-Chu Kuo ◽

Hsin-Yen Wu ◽

Wen-Hsiang Lin

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

High Electron Mobility Transistors ◽

Organic Chemical ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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High-electron-mobility transistors with metal-organic chemical vapor deposition-regrown contacts for high voltage applications

Semiconductor Science and Technology ◽

10.1088/1361-6641/abbfeb ◽

2020 ◽

Vol 35 (12) ◽

pp. 124004

Author(s):

Onur S Koksaldi ◽

Brian Romanczyk ◽

Jeffrey Haller ◽

Matthew Guidry ◽

Haoran Li ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

High Electron Mobility Transistors ◽

Organic Chemical ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Demonstration of InAlN/AlGaN high electron mobility transistors with an enhanced breakdown voltage by pulsed metal organic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.4939689 ◽

2016 ◽

Vol 108 (1) ◽

pp. 013508 ◽

Cited By ~ 6

Author(s):

JunShuai Xue ◽

JinCheng Zhang ◽

Yue Hao

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

High Electron Mobility Transistors ◽

Organic Chemical ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

Download Full-text