Use of ion beam assisted deposition and low temperature annealing for the fabrication of low loss, vertically stacked alumina waveguide structures

2008 ◽  
Vol 26 (5) ◽  
pp. 1813 ◽  
Author(s):  
J. R. Nightingale ◽  
R. Goswami ◽  
J. Duperre ◽  
J. M. Dawson ◽  
L. A. Hornak ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ion Beam ◽  
Low Loss ◽  
Low Temperature Annealing ◽  
Ion Beam Assisted Deposition

Low Temperature Epitaxial Growth of AlN & GaN Thin Films by the Method of Ion Beam Assisted Deposition

1995 ◽  
Vol 395 ◽  
Author(s):  
Ig-Hyeon Kim ◽  
Chan-Wook Jeon ◽  
Seon-Hyo Kim
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Sapphire Substrate ◽  
Ion Beam ◽  
Grazing Incidence ◽  
Amorphous Layer ◽  
Misfit Strain ◽  
Epitaxial Layers ◽  
Ion Beam Assisted Deposition ◽  
High Resolution Tem

ABSTRACTThe epitaxial layers of AIN and GaN were grown on Si and Sapphire substrate at a relatively low temperature of around 500 °C using the process of reactive ion beam assisted deposition. The optimum ion beam energy for epitaxial growth of AIN and GaN films was found to be about 50 eV. Characterization of the epitaxial layers was carried out by GID (Grazing-Incidence x-ray Diffraction) and high resolution TEM observation. The orientational relations between epitaxial layer and substrate were determined through these analysis. Very thin amorphous layers were observed at the interfaces of bom AIN and GaN films grown on Si(111) substrate, whereas the films grown on Sapphire substrate has no amorphous layer. The amorphous layer may act as a buffer layer enabling the growth of the epitaxial layers of AIN and GaN by relaxing the misfit strain in the early growing stage.

Low-temperature formation of silicon dioxide films by oxygen cluster ion beam assisted deposition

2010 ◽  
Vol 518 (21) ◽  
pp. S2-S5
Author(s):  
Hiromichi Ryuto ◽  
Takashi Yakushiji ◽  
Xin Jin ◽  
Gikan H. Takaoka
Keyword(s):  
Low Temperature ◽  
Silicon Dioxide ◽  
Ion Beam ◽  
Ion Beam Assisted Deposition ◽  
Silicon Dioxide Films ◽  
Cluster Ion ◽  
Oxygen Cluster

A Novel Silicided Shallow Junction Technology for Cmos VLSI

1986 ◽  
Vol 71 ◽  
Author(s):  
D.L. Kwong ◽  
Y.H. Ku ◽  
S.K. Lee ◽  
N.S. Alvi ◽  
P. Chu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ion Beam ◽  
Electrical Characteristics ◽  
Ion Beam Mixing ◽  
Si Substrates ◽  
Novel Technique ◽  
Low Temperature Annealing ◽  
Vlsi Technology ◽  
Shallow Junctions ◽  
Cmos Vlsi

AbstractA novel technique for the fabrication of shallow, silicided p+-n junctions with excellent electrical characteristics has been developed. The technique utilizes the ion implantation of dopants into silicide layers formed by ion-beam mixing with Si ions and low temperature annealing, and the subsequent drive-in of implanted dopants into the Si substrates to form shallow junctions. This technique can be easily applied to the fabrication of MOSFETs in a self-aligned fashion, and can have a significant impact on CMOS VLSI technology.

Ductility Enhancement and Mechanical Properties of Ibad Ceramic thin films

1990 ◽  
Vol 201 ◽  
Author(s):  
J. K. Hirvonen ◽  
T. G. Tetreault ◽  
G. Parker ◽  
C. J. McHargue
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Low Temperature ◽  
Ion Beam ◽  
Grain Structure ◽  
Fine Grained ◽  
Ceramic Thin Films ◽  
Ion Beam Assisted Deposition ◽  
Ceramic Films

AbstractThin ceramic films (A12O3 ZrO2, Si3N4, and BN) have been prepared by ion beam assisted deposition (IBAD) and their mechanical properties examined. The films exhibit extreme ductility and adhesion, with the former property possibly attributed to the very fine grained, quasi-amorphous grain structure noted for low temperature IBAD coatings.

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