A Novel Silicided Shallow Junction Technology for Cmos VLSI

1986 ◽  
Vol 71 ◽  
Author(s):  
D.L. Kwong ◽  
Y.H. Ku ◽  
S.K. Lee ◽  
N.S. Alvi ◽  
P. Chu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ion Beam ◽  
Electrical Characteristics ◽  
Ion Beam Mixing ◽  
Si Substrates ◽  
Novel Technique ◽  
Low Temperature Annealing ◽  
Vlsi Technology ◽  
Shallow Junctions ◽  
Cmos Vlsi

AbstractA novel technique for the fabrication of shallow, silicided p+-n junctions with excellent electrical characteristics has been developed. The technique utilizes the ion implantation of dopants into silicide layers formed by ion-beam mixing with Si ions and low temperature annealing, and the subsequent drive-in of implanted dopants into the Si substrates to form shallow junctions. This technique can be easily applied to the fabrication of MOSFETs in a self-aligned fashion, and can have a significant impact on CMOS VLSI technology.

Diffusion of A Deposited GeSe Film in GaAs using Ion-Beam Mixing

1985 ◽  
Vol 45 ◽  
Author(s):  
N. J. Kepler ◽  
N. W. Cheung
Keyword(s):  
Integrated Circuits ◽  
Ohmic Contacts ◽  
Ion Beam ◽  
Threshold Temperature ◽  
Electrical Characteristics ◽  
Electrical Measurements ◽  
Furnace Annealing ◽  
Ion Beam Mixing ◽  
Heavily Doped ◽  
And Diffusion

ABSTRACTIon-beam mixing and rapid thermal annealing (RTA) techniques are used to form shallow and heavily-doped n+ layers in undoped GaAs. RTA reduces surface degradation and improves crystalline quality compared to lengthy thermal cycles, although furnace annealing producesidentical electrical characteristics. Ion-beam mixing has only a small effect on the diffusion of a deposited GeSe film, because the damage created by implantation is repaired during RTA before significant diffusion occurs. We define a threshold temperature representing the onset of significant electrical activation and/or diffusion, and propose a model relating the annealing, activation, and diffusion temperatures for the GeSe/GaAs system. RBS. SIMS, and electrical measurements show that extremely shallow layers with a sheet resistivity as low as 1480/El can be formed in GaAs by diffusion from a GeSe source. This technique has potential application to the formation of shallow ohmic contacts for GaAs integrated circuits.

Formation of Sub-100 NM GE Wires on Si by E-Beam Evaporation/Lithography

1995 ◽  
Vol 380 ◽  
Author(s):  
C. Deng ◽  
J. C. Wu ◽  
C. J. Barbero ◽  
T. W. Sigmon ◽  
M. N. Wybourne
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Si Substrates ◽  
Novel Technique ◽  
Atomic Force ◽  
Transmission Electron ◽  
First Time ◽  
Scanning Electron

ABSTRACTA fabrication process for sub-100 nm Ge wires on Si substrates is reported for the first time. Wires with a cross section of 6 × 57 nm2 are demonstrated. The wire structures are analyzed by atomic force (AFM), scanning electron (SEM), and transmission electron microscopy (TEM). Sample preparation for TEM is performed using a novel technique using both pre and in situ deposition of multiple protection layers using a Focused Ion Beam (FIB) micromachining system.

Low‐temperature ion beam mixing of Al‐Sb

1981 ◽  
Vol 38 (4) ◽  
pp. 237-240 ◽  
Author(s):  
J. Delafond ◽  
S. T. Picraux ◽  
J. A. Knapp
Keyword(s):  
Low Temperature ◽  
Ion Beam ◽  
Ion Beam Mixing

Low-Temperature Formation of β-Type Silicon Carbide by Ion-Beam Mixing

1985 ◽  
Vol 24 (Part 1, No. 12) ◽  
pp. 1712-1715 ◽  
Author(s):  
Tadamasa Kimura ◽  
Yuki Tatebe ◽  
Akira Kawamura ◽  
Shigemi Yugo ◽  
Yoshio Adachi
Keyword(s):  
Silicon Carbide ◽  
Low Temperature ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Type Silicon
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