Low temperature epitaxial growth of Si0.5Ge0.5 alloy layer on Si (100) by ion beam assisted deposition

1995 ◽  
Vol 24 (10) ◽  
pp. 1399-1406 ◽  
Author(s):  
S. W. Park ◽  
J. Y. Shim ◽  
H. K. Baik
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Ion Beam ◽  
Alloy Layer ◽  
Ion Beam Assisted Deposition

Low Temperature Epitaxial Growth of AlN & GaN Thin Films by the Method of Ion Beam Assisted Deposition

1995 ◽  
Vol 395 ◽  
Author(s):  
Ig-Hyeon Kim ◽  
Chan-Wook Jeon ◽  
Seon-Hyo Kim
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Sapphire Substrate ◽  
Ion Beam ◽  
Grazing Incidence ◽  
Amorphous Layer ◽  
Misfit Strain ◽  
Epitaxial Layers ◽  
Ion Beam Assisted Deposition ◽  
High Resolution Tem

ABSTRACTThe epitaxial layers of AIN and GaN were grown on Si and Sapphire substrate at a relatively low temperature of around 500 °C using the process of reactive ion beam assisted deposition. The optimum ion beam energy for epitaxial growth of AIN and GaN films was found to be about 50 eV. Characterization of the epitaxial layers was carried out by GID (Grazing-Incidence x-ray Diffraction) and high resolution TEM observation. The orientational relations between epitaxial layer and substrate were determined through these analysis. Very thin amorphous layers were observed at the interfaces of bom AIN and GaN films grown on Si(111) substrate, whereas the films grown on Sapphire substrate has no amorphous layer. The amorphous layer may act as a buffer layer enabling the growth of the epitaxial layers of AIN and GaN by relaxing the misfit strain in the early growing stage.

scholarly journals Epitaxial Growth of Superconducting Ba(Fe1-xCox)2As2Thin Films on Technical Ion Beam Assisted Deposition MgO Substrates

2010 ◽  
Vol 4 (1) ◽  
pp. 013103 ◽  
Author(s):  
Kazumasa Iida ◽  
Jens Hänisch ◽  
Sascha Trommler ◽  
Vladimir Matias ◽  
Silvia Haindl ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Ion Beam ◽  
Ion Beam Assisted Deposition

Growth of Si1-x.Snx Layers on Si by Ion-Beam-Induced Epitaxial Crystallization (Ibiec) and Solid Phase Epitaxial Growth (Speg)

1995 ◽  
Vol 396 ◽  
Author(s):  
N. Kobayashi ◽  
M. Hasegawa ◽  
N. Hayashi ◽  
H. Katsumata ◽  
Y. Makita ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Peak Concentration ◽  
Solid Phase ◽  
Ion Beam ◽  
Alloy Layer ◽  
Group Iv ◽  
Epitaxial Crystallization ◽  
Semiconductor Thin Films ◽  
Amorphous Si ◽  
Alloy Semiconductors

AbstractSynthesis of metastable group-IV binary alloy semiconductor thin films on Si was achieved by the crystalline growth of Si1-xSnx layers using Sn ion implantation into Si(100) followed either by ion-beam-induced epitaxial crystallization (IBIEC) or solid phase epitaxial growth (SPEG). Si(100) wafers were implanted at room temperature with 110keV 120Sn ions to a dose of 1×1016 cm-2 (x=0.029 at peak concentration) and 2x1016 cm-2 (x=0.058 at peak concentration). By this process about 90nm-thick amorphous Si1-xSnx and about 30nm-thick deeper amorphous Si layers were formed. IBIEC experiments performed with 400keV Ar ions at 300–400°C have induced an epitaxial crystallization of the amorphous alloy layers up to the surface and lattice site occupation of Sn atoms for samples with the lower Sn concentration (LC). XRD analyses have revealed a partial strain compensation for the crystallized layer. Samples with the higher Sn concentration (HC) have shown an epitaxial crystallization accompanied by defects around the peak Sn concentration. SPEG experiments up to 750°C for LC samples have shown an epitaxial crystallization of the fully strained alloy layer, whereas those for HC samples up to 750°C have revealed a collapse of the epitaxial growth around the interface of the alloy layer and the Si substrate. Photoluminescence (PL) emission from both IBIEC-grown and SPEG-grown samples with the lower Sn concentration has shown similar peaks to those by ion-implanted and annealed Si samples with intense I1 or I1-related (Ar) peaks. Present results suggest that IBIEC has a feature for the non-thermal equilibrium fabrication of Si-Sn alloy semiconductors.

Low-temperature formation of silicon dioxide films by oxygen cluster ion beam assisted deposition

2010 ◽  
Vol 518 (21) ◽  
pp. S2-S5
Author(s):  
Hiromichi Ryuto ◽  
Takashi Yakushiji ◽  
Xin Jin ◽  
Gikan H. Takaoka
Keyword(s):  
Low Temperature ◽  
Silicon Dioxide ◽  
Ion Beam ◽  
Ion Beam Assisted Deposition ◽  
Silicon Dioxide Films ◽  
Cluster Ion ◽  
Oxygen Cluster

Epitaxial Growth of Ni on Si by Ion Beam Assisted Deposition

1988 ◽  
Vol 128 ◽  
Author(s):  
K. S. Grabowski ◽  
R. A. Kant ◽  
S. B. Qadr
Keyword(s):  
Electron Beam ◽  
Epitaxial Growth ◽  
Crystallographic Texture ◽  
Room Temperature ◽  
Ion Beam ◽  
Sample Surface ◽  
Electron Beam Evaporation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Beam Assisted Deposition

ABSTRACTEpitaxial Ni films were grown on Si(111) substrates to a thickness of about 500 nm by ion beam assisted deposition at room temperature. The films were grown using 25-keV-Ni ions and electron-beam evaporation of Ni at a relative arrival ratio of one ion for every 100 Ni vapor atoms. The ion beam and evaporant flux were both incident at 45° to the sample surface. Standard θ-2θ X-ray diffraction scans revealed the extent of crystallographic texture, while Ni {220} pole figure measurements identified the azimuthal orientation of Ni in the plane of the film. Films grown without the ion beam consisted of nearly randomly oriented fine grains of Ni whereas with bombardment the Ni (111) plane was found parallel to the Si (111) plane. In all the epitaxial cases the Ni [110] direction was perpendicular to the axis of the ion beam, suggesting that the azimuthal orientation of the film was determined by channeling of the ion beam down {110} planar channels in the Ni film. Additional experiments with different ions, energies, and substrates revealed their influence on the degree of epitaxy obtained.

Sign in / Sign up

Export Citation Format

Share Document