Modeling and characterization of direct-tunneling current in dual-layer ultrathin-gate dielectric films

2006 ◽  
Vol 24 (4) ◽  
pp. 1785 ◽  
Author(s):  
Hei Wong ◽  
Hiroshi Iwai
Keyword(s):  
Gate Dielectric ◽  
Tunneling Current ◽  
Dielectric Films ◽  
Direct Tunneling ◽  
Direct Tunneling Current

The Study of Direct Tunneling Current in Strained MOS Device with Silicon Nitride Stack Gate Dielectric

2011 ◽  
Vol 110-116 ◽  
pp. 5442-5446
Author(s):  
Li Jun Xu ◽  
He Ming Zhang ◽  
Hui Yong Hu ◽  
Xiao Bo Xu ◽  
Jian Li Ma
Keyword(s):  
Dielectric Constant ◽  
Silicon Nitride ◽  
Gate Dielectric ◽  
Device Simulation ◽  
Tunneling Current ◽  
Simulation Software ◽  
Direct Tunneling ◽  
Direct Tunneling Current ◽  
Application Limit ◽  
Mos Device

As the size of MOS device scaled down to sub 100nm, the direct tunneling current of gate oxide increases more and more. Using silicon nitride as gate dielectric can solve this problem effectively in some time due to the dielectric constant of silicon nitride is larger than silica’s.This paper derived the dielectric constant of silicon nitride stack gate dielectric,and simulated the direct tunneling current of strained MOS device with silica and silicon nitride gate dielectric through device simulation software ISE TCAD10.0,studied the direct tunneling current of strained MOS device with silicon nitride stack gate dielectric change with the variation of some parameters and the application limit of silicon nitride material.

Modeling of direct tunneling current through gate dielectric stacks

2000 ◽  
Vol 47 (10) ◽  
pp. 1851-1857 ◽  
Author(s):  
S. Mudanai ◽  
Yang-Yu Fan ◽  
Qiqing Ouyang ◽  
A.F. Tasch ◽  
S.K. Banerjee
Keyword(s):  
Gate Dielectric ◽  
Tunneling Current ◽  
Direct Tunneling ◽  
Direct Tunneling Current

Improvement in Gate Dielectric Quality of Ultra Thin a: SiN:H MNS Capacitor by Hydrogen Etching of the Substrate

2002 ◽  
Vol 716 ◽  
Author(s):  
Parag C. Waghmare ◽  
Samadhan B. Patil ◽  
Rajiv O. Dusane ◽  
V.Ramgopal Rao
Keyword(s):  
Silicon Nitride ◽  
Gate Dielectric ◽  
Substrate Surface ◽  
Scaling Limit ◽  
Tunneling Current ◽  
Chemical Vapor ◽  
Poor Performance ◽  
State Density ◽  
Direct Tunneling Current

AbstractTo extend the scaling limit of thermal SiO2, in the ultra thin regime when the direct tunneling current becomes significant, members of our group embarked on a program to explore the potential of silicon nitride as an alternative gate dielectric. Silicon nitride can be deposited using several CVD methods and its properties significantly depend on the method of deposition. Although these CVD methods can give good physical properties, the electrical properties of devices made with CVD silicon nitride show very poor performance related to very poor interface, poor stability, presence of large quantity of bulk traps and high gate leakage current. We have employed the rather newly developed Hot Wire Chemical Vapor Deposition (HWCVD) technique to develop the a:SiN:H material. From the results of large number of optimization experiments we propose the atomic hydrogen of the substrate surface prior to deposition to improve the quality of gate dielectric. Our preliminary results of these efforts show a five times improvement in the fixed charges and interface state density.

Characterization of HfO2/Si Exposed to Water Vapor at Room Temperature

2006 ◽  
Vol 917 ◽  
Author(s):  
Carlos Driemeier ◽  
Elizandra Martinazzi ◽  
Israel J. R. Baumvol ◽  
Evgeni Gusev
Keyword(s):  
Water Vapor ◽  
Metal Oxide ◽  
Room Temperature ◽  
Gate Dielectric ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Dielectric Films ◽  
Nuclear Reaction Analysis ◽  
Environmental Air

AbstractHfO2-based materials are the leading candidates to replace SiO2 as the gate dielectric in Si-based metal-oxide-semiconductor filed-effect transistors. The ubiquitous presence of water vapor in the environments to which the dielectric films are exposed (e.g. in environmental air) leads to questions about how water could affect the properties of the dielectric/Si structures. In order to investigate this topic, HfO2/SiO2/Si(001) thin film structures were exposed at room temperature to water vapor isotopically enriched in 2H and 18O followed by quantification and profiling of these nuclides by nuclear reaction analysis. We showed i) the formation of strongly bonded hydroxyls at the HfO2 surface; ii) room temperature migration of oxygen and water-derived oxygenous species through the HfO2 films, indicating that HfO2 is a weak diffusion barrier for these oxidizing species; iii) hydrogenous, water-derived species attachment to the SiO2 interlayer, resulting in detrimental hydrogenous defects therein. Consequences of these results to HfO2-based metal-oxide-semiconductor devices are discussed.

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