Role of defects at nanoscale ZnO and Cu(In,Ga)Se2 semiconductor interfaces

2006 ◽  
Vol 24 (4) ◽  
pp. 1233-1237
Author(s):  
Y. M. Strzhemechny
Keyword(s):  
Semiconductor Interfaces

Role of magnetic/nonmagnetic semiconductor interfaces in magneto-optical properties of small-offset superlattices

2002 ◽  
Vol 66 (7) ◽  
Author(s):  
M. Syed ◽  
G. L. Yang ◽  
J. K. Furdyna ◽  
M. Dobrowolska ◽  
S. Lee ◽  
...  
Keyword(s):  
Optical Properties ◽  
Semiconductor Interfaces

Electron Transport Through Epitaxial Metal/Semiconductor Heterostructures

1986 ◽  
Vol 77 ◽  
Author(s):  
A. F. J. Levi ◽  
R. T. Tung ◽  
J. L. Batstone ◽  
J. M. Gibson ◽  
M. Anzlowar ◽  
...  
Keyword(s):  
Electron Transport ◽  
Schottky Barrier ◽  
Semiconductor Heterostructures ◽  
Perfect Single Crystal ◽  
Barrier Heights ◽  
Semiconductor Interfaces ◽  
Semiconductor Contacts ◽  
First Time ◽  
Silicon Heterostructures

ABSTRACTAbrupt, epitaxial silicide/silicon heterostructures may be grown so that, for the first time, the physics of electron transport across near perfect, single crystal, metal/semiconductor interfaces may be probed experimentally. Transport measurements through type-A and -B oriented NiSi2 layers on Si(111) substrates have revealed Schottky barrier heights differing by 140 meV. In this paper we present results of experiments designed to explore the possible role of bulk and interface defects in determining the potential barrier at these near ideal epitaxial metal-semiconductor contacts. We have found little evidence for the presence of defects and the Schottky barrier is insensitive to details of the microscopic interfacial perfection. By contrast we find that both the electrical quality and magnitude of the barrier occurring at the NiSi2 /Si(100) heterojunction are dependent upon details of the microscopic interfacial perfection.

Metal/Semiconductor Contacts to Silicon Carbide: Physics and Technology

2018 ◽  
Vol 924 ◽  
pp. 339-344 ◽  
Author(s):  
Fabrizio Roccaforte ◽  
Marilena Vivona ◽  
Giuseppe Greco ◽  
Raffaella Lo Nigro ◽  
Filippo Giannazzo ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Carrier Transport ◽  
Transport Mechanisms ◽  
Metal Contacts ◽  
Semiconductor Interfaces ◽  
Key Points ◽  
Schottky Type ◽  
Semiconductor Contacts ◽  
P Type

The physics and technology of metal/semiconductor interfaces are key-points in the development of silicon carbide (SiC) based devices. Although in the last decade, the metal to 4H-SiC contacts, either Ohmic or Schottky type, have been extensively investigated with important achievements, these remain even now an intriguing topic since metal contacts are fundamental bricks of all electronic devices. Hence, their comprehension is at the base of the improvement of the performances of simple devices and complex systems. In this context, this paper aims to highlight some relevant aspects related to metal/semiconductor contacts to SiC, both on n-type and p-type, with an emphasis on the role of the barrier and on the carrier transport mechanisms at the interfaces.

Role of electron tunneling in spin filtering at ferromagnet/semiconductor interfaces

2003 ◽  
Vol 68 (7) ◽  
Author(s):  
S. E. Andresen ◽  
S. J. Steinmuller ◽  
A. Ionescu ◽  
G. Wastlbauer ◽  
C. M. Guertler ◽  
...  
Keyword(s):  
Electron Tunneling ◽  
Semiconductor Interfaces ◽  
Spin Filtering

The Role of the Ionization Potential in Vacuum-Level Alignment at Organic Semiconductor Interfaces

2007 ◽  
Vol 19 (5) ◽  
pp. 665-668 ◽  
Author(s):  
H. Fukagawa ◽  
S. Kera ◽  
T. Kataoka ◽  
S. Hosoumi ◽  
Y. Watanabe ◽  
...  
Keyword(s):  
Ionization Potential ◽  
Organic Semiconductor ◽  
Vacuum Level ◽  
Semiconductor Interfaces
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