Erratum: “The role of contact size on the formation of Schottky barriers and ohmic contacts at nanoscale metal-semiconductor interfaces” [J. Appl. Phys. 111(6), 064302 (2012)]

2014 ◽  
Vol 116 (7) ◽  
pp. 079902
Author(s):  
R. A. Kraya ◽  
L. Y. Kraya
Keyword(s):  
Ohmic Contacts ◽  
Schottky Barriers ◽  
Semiconductor Interfaces ◽  
Contact Size

Contacting Diffusion with FIB for Backside Circuit Edit—Procedures and Material Analysis

2005 ◽  
Author(s):  
U. Kerst ◽  
P. Sadewater ◽  
R. Schlangen ◽  
C. Boit ◽  
R. Leihkauf ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Electrical Properties ◽  
Process Parameters ◽  
Thermal Effects ◽  
Silicon Surface ◽  
Ohmic Contacts ◽  
Ion Beam ◽  
Schottky Barriers ◽  
Material Analysis ◽  
Type Silicon

Abstract The feasibility of low-ohmic FIB contacts to silicon with a localized silicidation was presented at ISTFA 2004 [1]. We have systematically explored options in contacting diffusions with FIB metal depositions directly. A demonstration of a 200nm x 200nm contact on source/drain diffusion level is given. The remaining article focuses on the properties of FIB deposited contacts on differently doped n-type Silicon. After the ion beam assisted platinum deposition a silicide was formed using a forming current in two configurations. The electrical properties of the contacts are compared to furnace anneal standards. Parameters of Schottky-barriers and thermal effects of the formation current are studied with numerical simulation. TEM images and material analysis of the low ohmic contacts show a Pt-silicide formed on a silicon surface with no visible defects. The findings indicate which process parameters need a more detailed investigation in order to establish values for a practical process.

Role of amphoteric defects in the formation of metal/GaAs Schottky barriers

1991 ◽  
Vol 58 (24) ◽  
pp. 2785-2787 ◽  
Author(s):  
T. Zhang ◽  
T. W. Sigmon
Keyword(s):  
Schottky Barriers

scholarly journals The role of quantum confinement in the formation of Schottky barriers in Pb–Si interfaces

2015 ◽  
Vol 217 ◽  
pp. 43-46 ◽  
Author(s):  
Tzu-Liang Chan ◽  
Jaime Souto-Casares ◽  
James R. Chelikowsky ◽  
Kai-Ming Ho ◽  
Cai-Zhuang Wang ◽  
...  
Keyword(s):  
Quantum Confinement ◽  
Schottky Barriers

The role of Ru in improving Schottky and ohmic contacts to InP

Vacuum ◽  
1995 ◽  
Vol 46 (8-10) ◽  
pp. 893-897 ◽  
Author(s):  
WO Barnard ◽  
G Myburg ◽  
FD Auret ◽  
JH Potgieter ◽  
P Ressel ◽  
...  
Keyword(s):  
Ohmic Contacts

scholarly journals Исследование формирования омических контактов Au/Mo/Ti с пониженным сопротивлением к эпитаксиальным слоям алмаза p-типа

2019 ◽  
Vol 89 (12) ◽  
pp. 1923
Author(s):  
М.Н. Дроздов ◽  
Е.В. Демидов ◽  
Ю.Н. Дроздов ◽  
С.А. Краев ◽  
В.И. Шашкин ◽  
...  
Keyword(s):  
Titanium Carbide ◽  
Contact Resistance ◽  
Ohmic Contacts ◽  
Contact Region ◽  
Effective Diffusion ◽  
Protective Properties ◽  
High Adhesion ◽  
Heavy Doping ◽  
P Type

The formation of ohmic Au/Mo/Ti contacts to epitaxial p-type diamond films is studied. The effect of annealing on the electrical and structural properties of contacts has been investigated. It was shown that during rapid thermal annealing, the outer layer of gold protects the contact system from oxidation up to a temperature of 850°C, unlike the simplified Au/Ti system, which is more common in modern works. In Au/Ti structures without a Mo layer after high-temperature annealing, effective diffusion of titanium into the gold layer occurs, which reduces its protective properties and accelerates the diffusion of oxygen to the boundary with the diamond. Oxidation of the Ti/C contact region blocks the formation of a conductive layer of titanium carbide with high adhesion at the border with diamond. The role of various factors in reducing the contact resistance is compared: annealing for the formation of titanium carbide, heavy doping of diamond with boron atoms, and crystalline perfection of epitaxial diamond substrates. For doped epitaxial films grown on single-sector quality substrates, non-annealed ohmic contacts with a record contact resistance of 4•10<-7> Ω•cm<2> were obtained.

Role of magnetic/nonmagnetic semiconductor interfaces in magneto-optical properties of small-offset superlattices

2002 ◽  
Vol 66 (7) ◽  
Author(s):  
M. Syed ◽  
G. L. Yang ◽  
J. K. Furdyna ◽  
M. Dobrowolska ◽  
S. Lee ◽  
...  
Keyword(s):  
Optical Properties ◽  
Semiconductor Interfaces

The Role of Ni in the Formation of Low Resistance Ni–Ge–Au Ohmic Contacts to n+ GaAs Heterostructures

1999 ◽  
Vol 14 (4) ◽  
pp. 1261-1271 ◽  
Author(s):  
Nancy E. Lumpkin ◽  
Gregory R. Lumpkin ◽  
Mark G. Blackford
Keyword(s):  
Contact Resistance ◽  
Ohmic Contacts ◽  
Wetting Agent ◽  
Dopant Distribution ◽  
Low Resistance ◽  
Ni Content ◽  
Alloy Microstructure

Nickel is a commonly used wetting agent in alloyed Au–Ge ohmic contacts to n-GaAs, resulting in uniformity improvements to the morphology and contact resistance. In order to study the role of Ni in Ni–Ge–Au alloys, we have fabricated samples with varying Ni content and characterized them using electron microbeam techniques. Our data indicate the amount of Ni in the alloy affects the microstructure and composition, the morphology of the metal/GaAs interface, and the amount of GaAs consumed during the alloy reaction. Also, the dopant distribution into the GaAs is heterogeneous depending on the alloy microstructure.

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